JPS59129475A - Low-noise semiconductor device - Google Patents
Low-noise semiconductor deviceInfo
- Publication number
- JPS59129475A JPS59129475A JP460983A JP460983A JPS59129475A JP S59129475 A JPS59129475 A JP S59129475A JP 460983 A JP460983 A JP 460983A JP 460983 A JP460983 A JP 460983A JP S59129475 A JPS59129475 A JP S59129475A
- Authority
- JP
- Japan
- Prior art keywords
- region
- guard ring
- semiconductor device
- low
- main junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052796 boron Inorganic materials 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 239000012141 concentrate Substances 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はガードリング構造をもつローノイズアバランシ
ェダイオード及びツェナーダイオードの逆サージ耐量の
向上に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improving the reverse surge resistance of a low-noise avalanche diode and a Zener diode having a guard ring structure.
一般にガードリング構造を有するアバランシェダイオー
ド、ツェナーダイオード等のＰ −ｎ接合をアバランシ
ェ降伏状態で使用するとアバランシェ雑音が発生するこ
とはよく知られている。このアバランシェ雑音は、ガー
ドリングに囲まれたＰ−ｎ主接合の面積を２×１０−以
下にすることにより低減されることがわかっている。し
かし、とのＰ −ｎ主接合面積を２×１０−以下にした
ために、逆サージ電圧が印加されると主接合の狭い領域
に電流集中が起きるため、放熱性が悪くなりサージ耐量
が低下してしまう欠点があった。It is well known that avalanche noise is generated when a P-n junction such as an avalanche diode or Zener diode, which generally has a guard ring structure, is used in an avalanche breakdown state. It has been found that this avalanche noise can be reduced by reducing the area of the Pn main junction surrounded by the guard ring to 2×10 − or less. However, since the area of the P-n main junction between the and There was a drawback.
本発明の目的は、これらの欠点を除去し、サージ耐量の
大きなローノイズ半導体装置を提供することである。An object of the present invention is to eliminate these drawbacks and provide a low-noise semiconductor device with high surge resistance.
本発明によれば、ローノイズ半導体装置において、ガー
ドリングに囲まれたＰ−ｎ主接合領域を複数に等分割し
、対称的に配置することにより達成される。According to the present invention, this is achieved in a low-noise semiconductor device by equally dividing the Pn main junction region surrounded by the guard ring into a plurality of parts and symmetrically arranging them.
以下、本発明の実施例を図で説明する。Hereinafter, embodiments of the present invention will be explained using figures.
第１図は、本発明ζこよるローノイズ半導体装置である
。比抵抗０．０１〜０．１Ω儂程度のｎ型シリコン基板
１に複数に分割された主接合領域３およびこれらをとり
囲むガードリング領域２を、シリコン酸化膜４の形成後
の写真蝕刻技術による開口と、続くボロン拡散とにより
形成する。この複数に分割された主接合領域３は、その
面積が２Ｘ１０”−”−以下であり、写真蝕刻技術の精
度できまる大きさの寸法にまで等分割できるが、通常は
２５μ〜３５μ径の同寸法のものであり、各々２〜４個
形成してガードリング領域３内で対称的に配置される。FIG. 1 shows a low noise semiconductor device according to the present invention. After forming the silicon oxide film 4, the main junction region 3 divided into a plurality of parts on the n-type silicon substrate 1 having a specific resistance of about 0.01 to 0.1 Ω and the guard ring region 2 surrounding these are formed by photolithography. Formed by opening and subsequent boron diffusion. The main bonding region 3 divided into a plurality of parts has an area of 2×10"-"- or less, and can be divided into equal parts as large as the precision of photolithography, but usually they are equal in diameter from 25μ to 35μ. 2 to 4 of each are formed and arranged symmetrically within the guard ring area 3.
次に電極部の開口を経て、電極金属メッキ及び銀ボタン
電極のメッキをして、電極５を形成することにより、当
該半導体装置が得られる。Next, through the opening of the electrode section, electrode metal plating and silver button electrode plating are performed to form the electrode 5, thereby obtaining the semiconductor device.
本発明ｉこよれば、パルス状の逆サージ電圧が印加され
た場合、従来は１ケ所でかつ中心部に配置されていたた
め、発熱が中心に集中してサージ耐量が低下する欠点が
あったが、発熱部を適切に分散させたことにより逆サー
ジ耐量が１０チ以上改良される効果をもつローノイズ半
導体装置を得ることができる。According to the present invention, when a pulsed reverse surge voltage is applied, conventionally it was placed in one place and in the center, which had the drawback that heat generation was concentrated in the center and the surge resistance was reduced. By appropriately dispersing the heat generating parts, it is possible to obtain a low-noise semiconductor device which has the effect of improving reverse surge resistance by 10 inches or more.
第１図は本発明によるローノイズダイオードの断面図、
第２図は本発明によるローノイズダイオードのＰ −ｎ
主接合領域の配置を示す平面図である０
１・・・ｎ型シリコン基板、２・・・ガードリング領域
、３・・・Ｐ −ｎ主接合領域。FIG. 1 is a cross-sectional view of a low-noise diode according to the present invention.
FIG. 2 shows the P-n of the low noise diode according to the present invention.
FIG. 1 is a plan view showing the arrangement of main bonding regions. 0 1...n-type silicon substrate, 2... guard ring region, 3... P-n main bonding region.
Claims (2)
装置において、前記ガードリングに囲まれたＰ−ｎ主接
合領域を複数に等分割することを特徴とするローノイズ
半導体装置。(1) A low-noise semiconductor device having a guard ring structure, characterized in that a Pn main junction region surrounded by the guard ring is equally divided into a plurality of parts.
いて、複数に等分割されたＰ −ｎ主接合領域が前記ガ
ードリング領域内において対称的ζこ配置されているこ
とを特徴とするローノイズ半導体装置。(2) The semiconductor device according to claim 1, wherein the P-n main junction region, which is divided into a plurality of equal parts, is arranged symmetrically in the guard ring region. Low noise semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP460983A JPS59129475A (en) | 1983-01-14 | 1983-01-14 | Low-noise semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP460983A JPS59129475A (en) | 1983-01-14 | 1983-01-14 | Low-noise semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59129475A true JPS59129475A (en) | 1984-07-25 |
Family
ID=11588786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP460983A Pending JPS59129475A (en) | 1983-01-14 | 1983-01-14 | Low-noise semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59129475A (en) |
-
1983
- 1983-01-14 JP JP460983A patent/JPS59129475A/en active Pending
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