JPS59126695A - 半導体レ−ザアレイ装置 - Google Patents
半導体レ−ザアレイ装置Info
- Publication number
- JPS59126695A JPS59126695A JP273383A JP273383A JPS59126695A JP S59126695 A JPS59126695 A JP S59126695A JP 273383 A JP273383 A JP 273383A JP 273383 A JP273383 A JP 273383A JP S59126695 A JPS59126695 A JP S59126695A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- ridge
- layer
- beam spot
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000013078 crystal Substances 0.000 abstract description 5
- 125000005842 heteroatom Chemical group 0.000 abstract description 2
- 238000002347 injection Methods 0.000 abstract description 2
- 239000007924 injection Substances 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000005253 cladding Methods 0.000 description 15
- 230000003287 optical effect Effects 0.000 description 15
- 238000009792 diffusion process Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP273383A JPS59126695A (ja) | 1983-01-10 | 1983-01-10 | 半導体レ−ザアレイ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP273383A JPS59126695A (ja) | 1983-01-10 | 1983-01-10 | 半導体レ−ザアレイ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59126695A true JPS59126695A (ja) | 1984-07-21 |
| JPH0436477B2 JPH0436477B2 (enrdf_load_stackoverflow) | 1992-06-16 |
Family
ID=11537521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP273383A Granted JPS59126695A (ja) | 1983-01-10 | 1983-01-10 | 半導体レ−ザアレイ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59126695A (enrdf_load_stackoverflow) |
-
1983
- 1983-01-10 JP JP273383A patent/JPS59126695A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0436477B2 (enrdf_load_stackoverflow) | 1992-06-16 |
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