JPS59123245A - 半導体装置用の結晶基板 - Google Patents

半導体装置用の結晶基板

Info

Publication number
JPS59123245A
JPS59123245A JP57229033A JP22903382A JPS59123245A JP S59123245 A JPS59123245 A JP S59123245A JP 57229033 A JP57229033 A JP 57229033A JP 22903382 A JP22903382 A JP 22903382A JP S59123245 A JPS59123245 A JP S59123245A
Authority
JP
Japan
Prior art keywords
single crystal
crystal film
silicon
magnesia
magnesia spinel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57229033A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0465539B2 (enExample
Inventor
Masao Mikami
三上　雅生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57229033A priority Critical patent/JPS59123245A/ja
Publication of JPS59123245A publication Critical patent/JPS59123245A/ja
Publication of JPH0465539B2 publication Critical patent/JPH0465539B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]

Landscapes

  • Formation Of Insulating Films (AREA)
  • Recrystallisation Techniques (AREA)
JP57229033A 1982-12-28 1982-12-28 半導体装置用の結晶基板 Granted JPS59123245A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57229033A JPS59123245A (ja) 1982-12-28 1982-12-28 半導体装置用の結晶基板

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57229033A JPS59123245A (ja) 1982-12-28 1982-12-28 半導体装置用の結晶基板

Publications (2)

Publication Number Publication Date
JPS59123245A true JPS59123245A (ja) 1984-07-17
JPH0465539B2 JPH0465539B2 (enExample) 1992-10-20

Family

ID=16885688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57229033A Granted JPS59123245A (ja) 1982-12-28 1982-12-28 半導体装置用の結晶基板

Country Status (1)

Country Link
JP (1) JPS59123245A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5084438A (en) * 1988-03-23 1992-01-28 Nec Corporation Electronic device substrate using silicon semiconductor substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5084438A (en) * 1988-03-23 1992-01-28 Nec Corporation Electronic device substrate using silicon semiconductor substrate

Also Published As

Publication number Publication date
JPH0465539B2 (enExample) 1992-10-20

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