JPS59121836A - 位置合せマ−クの形成方法 - Google Patents

位置合せマ−クの形成方法

Info

Publication number
JPS59121836A
JPS59121836A JP57227602A JP22760282A JPS59121836A JP S59121836 A JPS59121836 A JP S59121836A JP 57227602 A JP57227602 A JP 57227602A JP 22760282 A JP22760282 A JP 22760282A JP S59121836 A JPS59121836 A JP S59121836A
Authority
JP
Japan
Prior art keywords
film
etching
forming
photoresist
mark
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57227602A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0355973B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Goto
広志 後藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57227602A priority Critical patent/JPS59121836A/ja
Publication of JPS59121836A publication Critical patent/JPS59121836A/ja
Publication of JPH0355973B2 publication Critical patent/JPH0355973B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP57227602A 1982-12-28 1982-12-28 位置合せマ−クの形成方法 Granted JPS59121836A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57227602A JPS59121836A (ja) 1982-12-28 1982-12-28 位置合せマ−クの形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57227602A JPS59121836A (ja) 1982-12-28 1982-12-28 位置合せマ−クの形成方法

Publications (2)

Publication Number Publication Date
JPS59121836A true JPS59121836A (ja) 1984-07-14
JPH0355973B2 JPH0355973B2 (enrdf_load_stackoverflow) 1991-08-27

Family

ID=16863503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57227602A Granted JPS59121836A (ja) 1982-12-28 1982-12-28 位置合せマ−クの形成方法

Country Status (1)

Country Link
JP (1) JPS59121836A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02134808A (ja) * 1988-11-16 1990-05-23 Fujitsu Ltd 半導体装置の製造方法
JPH02230718A (ja) * 1989-03-03 1990-09-13 Nec Corp 目合わせマークおよびその作製方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02134808A (ja) * 1988-11-16 1990-05-23 Fujitsu Ltd 半導体装置の製造方法
JPH02230718A (ja) * 1989-03-03 1990-09-13 Nec Corp 目合わせマークおよびその作製方法

Also Published As

Publication number Publication date
JPH0355973B2 (enrdf_load_stackoverflow) 1991-08-27

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