JPS59117725A - 薄膜ヘツドの製造方法 - Google Patents
薄膜ヘツドの製造方法Info
- Publication number
- JPS59117725A JPS59117725A JP23041882A JP23041882A JPS59117725A JP S59117725 A JPS59117725 A JP S59117725A JP 23041882 A JP23041882 A JP 23041882A JP 23041882 A JP23041882 A JP 23041882A JP S59117725 A JPS59117725 A JP S59117725A
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- coil
- tapered
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000010408 film Substances 0.000 claims abstract description 77
- 238000005530 etching Methods 0.000 claims abstract description 18
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 8
- 239000011347 resin Substances 0.000 claims description 11
- 229920005989 resin Polymers 0.000 claims description 11
- 229910010272 inorganic material Inorganic materials 0.000 claims description 10
- 239000011147 inorganic material Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 6
- 238000001020 plasma etching Methods 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23041882A JPS59117725A (ja) | 1982-12-24 | 1982-12-24 | 薄膜ヘツドの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23041882A JPS59117725A (ja) | 1982-12-24 | 1982-12-24 | 薄膜ヘツドの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59117725A true JPS59117725A (ja) | 1984-07-07 |
| JPS6248291B2 JPS6248291B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-10-13 |
Family
ID=16907571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23041882A Granted JPS59117725A (ja) | 1982-12-24 | 1982-12-24 | 薄膜ヘツドの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59117725A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS626417A (ja) * | 1985-07-03 | 1987-01-13 | Fuji Photo Film Co Ltd | 薄膜磁気ヘツドの製造方法 |
| JPS628321A (ja) * | 1985-07-04 | 1987-01-16 | Fuji Photo Film Co Ltd | 薄膜磁気ヘツドの製造方法 |
| JPS628320A (ja) * | 1985-07-04 | 1987-01-16 | Fuji Photo Film Co Ltd | 薄膜磁気ヘツドの製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5381110A (en) * | 1976-12-25 | 1978-07-18 | Toshiba Corp | Manufacture of magnetic film head |
| JPS5612733A (en) * | 1979-07-11 | 1981-02-07 | Fujitsu Ltd | Ion etching method |
| JPS56156915A (en) * | 1980-05-06 | 1981-12-03 | Hitachi Ltd | Formation of multilayer film for electronic circuit |
-
1982
- 1982-12-24 JP JP23041882A patent/JPS59117725A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5381110A (en) * | 1976-12-25 | 1978-07-18 | Toshiba Corp | Manufacture of magnetic film head |
| JPS5612733A (en) * | 1979-07-11 | 1981-02-07 | Fujitsu Ltd | Ion etching method |
| JPS56156915A (en) * | 1980-05-06 | 1981-12-03 | Hitachi Ltd | Formation of multilayer film for electronic circuit |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS626417A (ja) * | 1985-07-03 | 1987-01-13 | Fuji Photo Film Co Ltd | 薄膜磁気ヘツドの製造方法 |
| JPS628321A (ja) * | 1985-07-04 | 1987-01-16 | Fuji Photo Film Co Ltd | 薄膜磁気ヘツドの製造方法 |
| JPS628320A (ja) * | 1985-07-04 | 1987-01-16 | Fuji Photo Film Co Ltd | 薄膜磁気ヘツドの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6248291B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-10-13 |
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