GB2207395A - Producing a pattern in a material - Google Patents

Producing a pattern in a material Download PDF

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Publication number
GB2207395A
GB2207395A GB08718006A GB8718006A GB2207395A GB 2207395 A GB2207395 A GB 2207395A GB 08718006 A GB08718006 A GB 08718006A GB 8718006 A GB8718006 A GB 8718006A GB 2207395 A GB2207395 A GB 2207395A
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GB
United Kingdom
Prior art keywords
layer
pattern
energy
materials
conductive tracks
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB08718006A
Other versions
GB2207395B (en
GB8718006D0 (en
Inventor
Charles Richard Jarvis
Stephen Geoffrey Tyler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to GB8718006A priority Critical patent/GB2207395B/en
Publication of GB8718006D0 publication Critical patent/GB8718006D0/en
Publication of GB2207395A publication Critical patent/GB2207395A/en
Application granted granted Critical
Publication of GB2207395B publication Critical patent/GB2207395B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/02Local etching
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/027Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/061Etching masks
    • H05K3/062Etching masks consisting of metals or alloys or metallic inorganic compounds
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/03Metal processing
    • H05K2203/0361Stripping a part of an upper metal layer to expose a lower metal layer, e.g. by etching or using a laser
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/09Treatments involving charged particles
    • H05K2203/092Particle beam, e.g. using an electron beam or an ion beam
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107Using laser light

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

A pattern in a material, for example a pattern of conductive tracks, is produced by laying down a layer of first material (3) adjacent to a layer of second material (2). Energy is applied to a selected region or regions to cause diffusion between the first and second materials to produce a third material (5) which is a mixture of the two. Then one of the first and third materials is selectively etched to produce the pattern. <IMAGE>

Description

Method for Producing a Pattern in a Material This invention relates to a method for producing a pattern in a material.
In many applications it is. often desirable to form a pattern in a material with extremely high accuracy; such as for example, a pattern of conductive tracks on an insulating substrate. However, it is difficult to achieve the accuracies required using conventional methods.
The present invention seeks to provide an improved method for producing a pattern in a material.
According to this invention, a method for producing a pattern in a material includes the steps of: arranging a layer of first material on a layer of second material different to the first; applying energy to a selected region of the first material to cause diffusion between the first and second materials, such that a third material comprising a mixture of the first and second materials is produced at the region; and applying a process which selectively attacks one of the first and third materials.
The energy may be applied in a highly selective way, enabling well defined lines and areas of pattern to be produced, such that greater accuracy may be achieved with fewer manufacturing stages than is generally possible using conventional techniques which usually involve photolithographic processes. Preferably the process is etching. This may be wet etching, or dry etching involving ion beam milling, for example. The etchant may be chosen, for example, to etch the third material and the second material but not the first. In this case, both the third material and the underlying second material may be etched, but not that part of the second material protected by the first.The layers of first and second materials may be laid down in any order, although obviously, where they are laid down on a substrate, it is more convenient if the layer of first material to which energy is to be applied is laid down after the layer of second material.
However, it may be possible to apply the energy to the first material via the second material. The amount of applied energy required is dependent on the types of materials used and the thicknesses of the layers. It is necessary that sufficient diffusion occurs between the first and second materials to produce a third material which has a different characteristic from the first material to enable them to be distinguished so that selective processing be carried out. Generally, it will be necessary to ensure that diffusion occurs throughout the first material such that atoms of the second material are present at the surface of the first material. The amount of energy required to obtain the required degree of diffusion may be readily determined by one skilled in the art by a series of routine experiments.
Preferably, the layer of the first material is substantially thinner than the layer of the second material. In this context substantially should be taken to mean sufficiently thin to enable etchant to selectively act on only one of the first and third materials. The thinner the layer of first materials is made, the less energy is required to produce complete diffusion through it of atoms of the second material.
Advantageously the applied energy is in the form of a laser beam or a high energy particle beam, such as an electron beam. Such beams may be focussed to a very small size and may be accurately controlled to produce a high definition pattern.
It is preferred that the layer of first material has a free surface to which the energy is directly applied. By "directly" is meant that it is not applied via an intervening layer, for example the layer of second material or an additional layer deposited on the first material. However, it may be possible to apply energy through such an additional layer.
According to a feature of this invention, apparatus is arranged to carry out a method in accordance with the invention to produce a device which includes a desired pattern of conductive tracks. According to another feature of the invention, a device is manufactured by a method in accordance with the invention, the device comprising an insulating substrate bearing conductive tracks.
One way in which the invention may be performed is now described by way of example with reference to the accompanying drawings, in which Figures 1, 2, 3 and 4 illustrate successive steps in a method in accordance with the invention.
In a process in accordance with the invention for producing a pattern of conductive copper tracks on an insulating substrate, a 35 micron layer 1 of copper is laid down on an insulating substrate 2 as shown in Figure 1. The entire surface of the copper layer 1 is then plated with gold to give a layer 3 of about 0.3 microns thickness over the copper layer 2, as shown in Figure 2.
A laser beam 4 is focussed on to the gold layer 3 and guided over its surface in a predetermined path. The laser beam has a power level of a few milliwatts and is driven at a speed over the surface which enables copper atoms from the layer 2 to diffuse to the open surface of the gold layer 3. This is illustrated in Figure 3 of the accompanying drawings. The gold-copper alloy produced in the regions where the laser beam has been applied forms a pattern 5 over the surface. Etchant is then applied, being in this case ferric chloride. The ferric chloride etches the alloy layer 5 and the underlying copper. The thin gold layer 3 is sufficient to prevent etching in those areas which it covers. Thus a pattern of conductive tracks 6 may be accurately produced over the surface of the substrate 2, as shown in Figure 4.
Of course, other forms of energy beam may be employed, such as an electrom beam, and the alloy 5 and top layer 3 may be selectively processed using other techniques

Claims (14)

  1. CLAIMS 1. A method for producing a pattern in a material including the steps of: arranging a layer of first material on a layer of second material different to the first; applying energy to a selected region of the first material to cause diffusion between the first and second materials, such that a third material comprising a mixture of the first and second materials is produced at the region; and applying a process which selectively attacks one of the first and third materials.
  2. 2. A method as claimed in claim 1 wherein the process is etching.
  3. 3. A method as claimed in claim 2 wherein the etchant etches the second material such that the second material underlying the said one is etched.
  4. 4. A method as claimed in claim 1, 2 or 3 wherein the first material is a metal.
  5. 5. A method as claimed in claim 1, 2, 3 or 4 wherein the second material is a metal.
  6. 6. A method as claimed in any preceding claim wherein the layer of the first material is substantially thinner than the layer of second material.
  7. 7. A method as claimed in any preceding claim and wherein the applied energy is a laser beam.
  8. 8. A method as claimed in any of chimps 1 to 6 wherein the applied energy is a high energy particle beam.
  9. 9. A method as claimed in any preceding claim wherein the layer of first material has a free surface to which the energy is directly applied.
  10. 10. A method as claimed in any preceding claim and including an insulating substrate on which the second layer is laid down.
  11. 11. Apparatus arranged to carry out a method as claimed in any preceding claim to produce a device which includes a desired pattern of conductive tracks.
  12. 12. A device manufactured in accordance with a method as claimed in any of claims 1 to 10, the device comprising an insulating substrate bearing conductive tracks.
  13. 13. A method substantially as illustrated in and described with reference to the accompanying drawings.
  14. 14. A device manufactured in accordance with a method substantially as illustrated in and described with reference to the accompanying drawings.
GB8718006A 1987-07-29 1987-07-29 A method for producing a pattern in a material Expired - Fee Related GB2207395B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB8718006A GB2207395B (en) 1987-07-29 1987-07-29 A method for producing a pattern in a material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8718006A GB2207395B (en) 1987-07-29 1987-07-29 A method for producing a pattern in a material

Publications (3)

Publication Number Publication Date
GB8718006D0 GB8718006D0 (en) 1987-09-03
GB2207395A true GB2207395A (en) 1989-02-01
GB2207395B GB2207395B (en) 1991-07-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
GB8718006A Expired - Fee Related GB2207395B (en) 1987-07-29 1987-07-29 A method for producing a pattern in a material

Country Status (1)

Country Link
GB (1) GB2207395B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005027200A2 (en) * 2003-09-06 2005-03-24 Assa Abloy Identification Technology Group Ab Method and device for contacting vo semiconductor chips on a metallic substrate
WO2010112504A1 (en) * 2009-04-02 2010-10-07 Siemens Aktiengesellschaft Method for structuring a multi-layer film
JP7461437B1 (en) 2022-10-21 2024-04-03 旭東 陳 Subtractive method for manufacturing circuit boards with fine interconnections

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005027200A2 (en) * 2003-09-06 2005-03-24 Assa Abloy Identification Technology Group Ab Method and device for contacting vo semiconductor chips on a metallic substrate
WO2005027200A3 (en) * 2003-09-06 2006-03-16 Assa Abloy Identification Tech Method and device for contacting vo semiconductor chips on a metallic substrate
US7727861B2 (en) 2003-09-06 2010-06-01 Assa Abloy Ab Method and device for contacting semiconductor chips
WO2010112504A1 (en) * 2009-04-02 2010-10-07 Siemens Aktiengesellschaft Method for structuring a multi-layer film
JP7461437B1 (en) 2022-10-21 2024-04-03 旭東 陳 Subtractive method for manufacturing circuit boards with fine interconnections

Also Published As

Publication number Publication date
GB2207395B (en) 1991-07-17
GB8718006D0 (en) 1987-09-03

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