JPS59116189A - 単結晶形状制御方法 - Google Patents
単結晶形状制御方法Info
- Publication number
- JPS59116189A JPS59116189A JP22397782A JP22397782A JPS59116189A JP S59116189 A JPS59116189 A JP S59116189A JP 22397782 A JP22397782 A JP 22397782A JP 22397782 A JP22397782 A JP 22397782A JP S59116189 A JPS59116189 A JP S59116189A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- diameter
- shoulder
- single crystal
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims description 16
- 239000000155 melt Substances 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 abstract description 6
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract description 5
- 239000007858 starting material Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 238000004033 diameter control Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/28—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using weight changes of the crystal or the melt, e.g. flotation methods
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22397782A JPS59116189A (ja) | 1982-12-22 | 1982-12-22 | 単結晶形状制御方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22397782A JPS59116189A (ja) | 1982-12-22 | 1982-12-22 | 単結晶形状制御方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59116189A true JPS59116189A (ja) | 1984-07-04 |
JPH0512310B2 JPH0512310B2 (enrdf_load_stackoverflow) | 1993-02-17 |
Family
ID=16806636
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22397782A Granted JPS59116189A (ja) | 1982-12-22 | 1982-12-22 | 単結晶形状制御方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59116189A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4973377A (en) * | 1987-03-31 | 1990-11-27 | Shin-Etsu Handotai Company, Ltd. | Crystal diameter controlling method |
-
1982
- 1982-12-22 JP JP22397782A patent/JPS59116189A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4973377A (en) * | 1987-03-31 | 1990-11-27 | Shin-Etsu Handotai Company, Ltd. | Crystal diameter controlling method |
Also Published As
Publication number | Publication date |
---|---|
JPH0512310B2 (enrdf_load_stackoverflow) | 1993-02-17 |
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