JPS59111923A - 高純度ガリウム砒素多結晶製造法及び装置 - Google Patents
高純度ガリウム砒素多結晶製造法及び装置Info
- Publication number
- JPS59111923A JPS59111923A JP21872882A JP21872882A JPS59111923A JP S59111923 A JPS59111923 A JP S59111923A JP 21872882 A JP21872882 A JP 21872882A JP 21872882 A JP21872882 A JP 21872882A JP S59111923 A JPS59111923 A JP S59111923A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- gaas
- crucible
- pressure control
- vapor pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title abstract description 10
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title description 23
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 29
- 239000003708 ampul Substances 0.000 claims abstract description 20
- 239000010453 quartz Substances 0.000 claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000002844 melting Methods 0.000 claims abstract description 5
- 230000008018 melting Effects 0.000 claims abstract description 5
- 238000003786 synthesis reaction Methods 0.000 claims abstract description 5
- 239000002775 capsule Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 239000000155 melt Substances 0.000 claims description 5
- 238000011109 contamination Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims description 2
- 238000000354 decomposition reaction Methods 0.000 claims description 2
- 239000013081 microcrystal Substances 0.000 claims description 2
- 239000002994 raw material Substances 0.000 abstract description 8
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 238000005538 encapsulation Methods 0.000 abstract 2
- 239000013078 crystal Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000004246 ligand exchange chromatography Methods 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 241000254158 Lampyridae Species 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21872882A JPS59111923A (ja) | 1982-12-14 | 1982-12-14 | 高純度ガリウム砒素多結晶製造法及び装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21872882A JPS59111923A (ja) | 1982-12-14 | 1982-12-14 | 高純度ガリウム砒素多結晶製造法及び装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59111923A true JPS59111923A (ja) | 1984-06-28 |
| JPS6154099B2 JPS6154099B2 (enExample) | 1986-11-20 |
Family
ID=16724501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21872882A Granted JPS59111923A (ja) | 1982-12-14 | 1982-12-14 | 高純度ガリウム砒素多結晶製造法及び装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59111923A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012046367A (ja) * | 2010-08-25 | 2012-03-08 | Showa Denko Kk | Ｉｉｉ−ｖ族化合物半導体多結晶の製造装置及び製造方法 |
-
1982
- 1982-12-14 JP JP21872882A patent/JPS59111923A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012046367A (ja) * | 2010-08-25 | 2012-03-08 | Showa Denko Kk | Ｉｉｉ−ｖ族化合物半導体多結晶の製造装置及び製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6154099B2 (enExample) | 1986-11-20 |
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