JPS59102899A - ＧａＰ単結晶の製造方法 - Google Patents

ＧａＰ単結晶の製造方法

Info

Publication number
JPS59102899A
JPS59102899A JP57209601A JP20960182A JPS59102899A JP S59102899 A JPS59102899 A JP S59102899A JP 57209601 A JP57209601 A JP 57209601A JP 20960182 A JP20960182 A JP 20960182A JP S59102899 A JPS59102899 A JP S59102899A
Authority
JP
Japan
Prior art keywords
gap
crystal
single crystal
temperature gradient
bits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57209601A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0240640B2 (enrdf_load_stackoverflow
Inventor
Jisaburo Ushizawa
牛沢　次三郎
Takashi Fujii
高志 藤井
Yoshihiro Kokubu
国分　義弘
Masayuki Watanabe
正幸 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP57209601A priority Critical patent/JPS59102899A/ja
Publication of JPS59102899A publication Critical patent/JPS59102899A/ja
Publication of JPH0240640B2 publication Critical patent/JPH0240640B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/44—Gallium phosphide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP57209601A 1982-11-30 1982-11-30 ＧａＰ単結晶の製造方法 Granted JPS59102899A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57209601A JPS59102899A (ja) 1982-11-30 1982-11-30 ＧａＰ単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57209601A JPS59102899A (ja) 1982-11-30 1982-11-30 ＧａＰ単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS59102899A true JPS59102899A (ja) 1984-06-14
JPH0240640B2 JPH0240640B2 (enrdf_load_stackoverflow) 1990-09-12

Family

ID=16575509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57209601A Granted JPS59102899A (ja) 1982-11-30 1982-11-30 ＧａＰ単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS59102899A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6418994A (en) * 1987-07-14 1989-01-23 Sumitomo Metal Mining Co Gallium phosphide single crystal and production thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7046242B1 (ja) 2021-02-02 2022-04-01 Ｊｘ金属株式会社 リン化インジウム単結晶インゴットの製造方法及びリン化インジウム基板の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6418994A (en) * 1987-07-14 1989-01-23 Sumitomo Metal Mining Co Gallium phosphide single crystal and production thereof

Also Published As

Publication number Publication date
JPH0240640B2 (enrdf_load_stackoverflow) 1990-09-12

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