JPS5910270A - 半導体集積回路装置 - Google Patents
半導体集積回路装置Info
- Publication number
- JPS5910270A JPS5910270A JP57119303A JP11930382A JPS5910270A JP S5910270 A JPS5910270 A JP S5910270A JP 57119303 A JP57119303 A JP 57119303A JP 11930382 A JP11930382 A JP 11930382A JP S5910270 A JPS5910270 A JP S5910270A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- layer
- platinum silicide
- platinum
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910021339 platinum silicide Inorganic materials 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 10
- 229910052697 platinum Inorganic materials 0.000 abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 238000005468 ion implantation Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 16
- 229920005591 polysilicon Polymers 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 108091006146 Channels Proteins 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57119303A JPS5910270A (ja) | 1982-07-09 | 1982-07-09 | 半導体集積回路装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57119303A JPS5910270A (ja) | 1982-07-09 | 1982-07-09 | 半導体集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5910270A true JPS5910270A (ja) | 1984-01-19 |
| JPH0376023B2 JPH0376023B2 (enrdf_load_stackoverflow) | 1991-12-04 |
Family
ID=14758077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57119303A Granted JPS5910270A (ja) | 1982-07-09 | 1982-07-09 | 半導体集積回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5910270A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61210662A (ja) * | 1985-01-22 | 1986-09-18 | フエアチヤイルド セミコンダクタ コ−ポレ−シヨン | 半導体構成体 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5570023A (en) * | 1978-11-20 | 1980-05-27 | Mitsubishi Electric Corp | Formation of electrode and wiring for semiconductor |
-
1982
- 1982-07-09 JP JP57119303A patent/JPS5910270A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5570023A (en) * | 1978-11-20 | 1980-05-27 | Mitsubishi Electric Corp | Formation of electrode and wiring for semiconductor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61210662A (ja) * | 1985-01-22 | 1986-09-18 | フエアチヤイルド セミコンダクタ コ−ポレ−シヨン | 半導体構成体 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0376023B2 (enrdf_load_stackoverflow) | 1991-12-04 |
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