JPS589896A - 樹枝状ウエブ成長用の溶融装置 - Google Patents

樹枝状ウエブ成長用の溶融装置

Info

Publication number
JPS589896A
JPS589896A JP57036704A JP3670482A JPS589896A JP S589896 A JPS589896 A JP S589896A JP 57036704 A JP57036704 A JP 57036704A JP 3670482 A JP3670482 A JP 3670482A JP S589896 A JPS589896 A JP S589896A
Authority
JP
Japan
Prior art keywords
susceptor
growth
melting device
dendritic
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57036704A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0240638B2 (OSRAM
Inventor
チヤ−ルズ・スチユア−ト・ダンカン
ポ−ル・エイ・ピオトロフスキ−
マリア・エリザベス・スカツチ
ジエイムズ・ポ−ル・マクヒユ−
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of JPS589896A publication Critical patent/JPS589896A/ja
Publication of JPH0240638B2 publication Critical patent/JPH0240638B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Fibers (AREA)
JP57036704A 1981-07-10 1982-03-10 樹枝状ウエブ成長用の溶融装置 Granted JPS589896A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/282,334 US4389377A (en) 1981-07-10 1981-07-10 Apparatus for growing a dendritic web
US282334 1994-07-29

Publications (2)

Publication Number Publication Date
JPS589896A true JPS589896A (ja) 1983-01-20
JPH0240638B2 JPH0240638B2 (OSRAM) 1990-09-12

Family

ID=23081034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57036704A Granted JPS589896A (ja) 1981-07-10 1982-03-10 樹枝状ウエブ成長用の溶融装置

Country Status (7)

Country Link
US (1) US4389377A (OSRAM)
EP (1) EP0069821B1 (OSRAM)
JP (1) JPS589896A (OSRAM)
AU (1) AU554202B2 (OSRAM)
DE (1) DE3272809D1 (OSRAM)
ES (1) ES8306802A1 (OSRAM)
IN (1) IN161381B (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4556619A (en) * 1982-09-03 1985-12-03 Dai Nippon Insatsu Kabushiki Kaisha Negative-type acetalized polyvinyl alcohol resist sensitive to ionizing radiation

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4698120A (en) * 1984-10-29 1987-10-06 Westinghouse Electric Corp. Barrier for quartz crucible for drawing silicon dendritic web and method of use
IN161924B (OSRAM) * 1984-10-29 1988-02-27 Westinghouse Electric Corp
US4751059A (en) * 1986-12-05 1988-06-14 Westinghouse Electric Corp. Apparatus for growing dendritic web crystals of constant width
US4828808A (en) * 1987-09-02 1989-05-09 The United States Of America As Represented By The United States Department Of Energy Apparatus for silicon web growth of higher output and improved growth stability
DE3736339A1 (de) * 1987-10-27 1989-05-11 Siemens Ag Anordnung zum kontinuierlichen aufschmelzen von siliziumgranulat fuer das bandziehverfahren
DE3840445C2 (de) * 1987-12-03 1996-08-14 Toshiba Ceramics Co Vorrichtung und Verfahren zum Ziehen eines Einkristalls
JPH0633218B2 (ja) * 1987-12-08 1994-05-02 日本鋼管株式会社 シリコン単結晶の製造装置
US4919901A (en) * 1987-12-31 1990-04-24 Westinghouse Electric Corp. Barrier design for crucibles for silicon dendritic web growth
EP0340941A1 (en) * 1988-04-28 1989-11-08 Nkk Corporation Method and apparatus for manufacturing silicon single crystals
AU632886B2 (en) * 1990-01-25 1993-01-14 Ebara Corporation Melt replenishment system for dendritic web growth
US5913980A (en) * 1996-04-10 1999-06-22 Ebara Solar, Inc. Method for removing complex oxide film growth on silicon crystal

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5611675A (en) * 1979-07-04 1981-02-05 Marantz Japan Inc Key-touch strength changing circuit for automatic playing piano

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL237834A (OSRAM) * 1958-04-09
GB939102A (en) * 1959-02-18 1963-10-09 Philco Corp Improvements in and relating to the production of crystals, and apparatus for use therein
US3096158A (en) * 1959-09-25 1963-07-02 Gerthart K Gaule Apparatus for pulling single crystals in the form of long flat strips from a melt
FR1320741A (fr) * 1961-10-06 1963-03-15 Gen Electric Méthode de grossissement des cristaux
US3977934A (en) * 1975-01-02 1976-08-31 Motorola, Inc. Silicon manufacture
SU661966A1 (ru) * 1976-11-23 1980-04-05 Всесоюзный Научно-Исследовательский Институт Монокристаллов И Особо Чистых Химических Веществ "Вниимонокристалл" Устройство дл выт гивани монокристаллов из расплава
US4271129A (en) * 1979-03-06 1981-06-02 Rca Corporation Heat radiation deflectors within an EFG crucible

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5611675A (en) * 1979-07-04 1981-02-05 Marantz Japan Inc Key-touch strength changing circuit for automatic playing piano

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4556619A (en) * 1982-09-03 1985-12-03 Dai Nippon Insatsu Kabushiki Kaisha Negative-type acetalized polyvinyl alcohol resist sensitive to ionizing radiation

Also Published As

Publication number Publication date
JPH0240638B2 (OSRAM) 1990-09-12
EP0069821B1 (en) 1986-08-27
AU8060182A (en) 1983-01-13
ES510300A0 (es) 1983-06-01
IN161381B (OSRAM) 1987-11-21
EP0069821A1 (en) 1983-01-19
AU554202B2 (en) 1986-08-14
DE3272809D1 (en) 1986-10-02
ES8306802A1 (es) 1983-06-01
US4389377A (en) 1983-06-21

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