JPS6238031B2 - - Google Patents
Info
- Publication number
- JPS6238031B2 JPS6238031B2 JP59179147A JP17914784A JPS6238031B2 JP S6238031 B2 JPS6238031 B2 JP S6238031B2 JP 59179147 A JP59179147 A JP 59179147A JP 17914784 A JP17914784 A JP 17914784A JP S6238031 B2 JPS6238031 B2 JP S6238031B2
- Authority
- JP
- Japan
- Prior art keywords
- bath
- tape
- silicon
- carbon tape
- depositing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 27
- 239000010703 silicon Substances 0.000 claims abstract description 27
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 230000001105 regulatory effect Effects 0.000 claims 1
- 230000000630 rising effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 3
- 101700004678 SLIT3 Proteins 0.000 description 2
- 102100027339 Slit homolog 3 protein Human genes 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005499 meniscus Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/007—Pulling on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C3/00—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material
- B05C3/02—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material the work being immersed in the liquid or other fluent material
- B05C3/12—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material the work being immersed in the liquid or other fluent material for treating work of indefinite length
- B05C3/125—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material the work being immersed in the liquid or other fluent material for treating work of indefinite length the work being a web, band, strip or the like
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
- C23C2/14—Removing excess of molten coatings; Controlling or regulating the coating thickness
- C23C2/22—Removing excess of molten coatings; Controlling or regulating the coating thickness by rubbing, e.g. using knives, e.g. rubbing solids
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
- C23C2/34—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor characterised by the shape of the material to be treated
- C23C2/36—Elongated material
- C23C2/40—Plates; Strips
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Coating Apparatus (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Polarising Elements (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8313915A FR2550965B1 (fr) | 1983-08-30 | 1983-08-30 | Dispositif pour deposer une couche de silicium polycristallin sur un ruban de carbone |
| FR8313915 | 1983-08-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60232272A JPS60232272A (ja) | 1985-11-18 |
| JPS6238031B2 true JPS6238031B2 (OSRAM) | 1987-08-15 |
Family
ID=9291888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59179147A Granted JPS60232272A (ja) | 1983-08-30 | 1984-08-28 | カ−ボンテ−プへの多結晶シリコン層デポジツト装置 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4520752A (OSRAM) |
| EP (1) | EP0141941B1 (OSRAM) |
| JP (1) | JPS60232272A (OSRAM) |
| AT (1) | ATE25931T1 (OSRAM) |
| AU (1) | AU561637B2 (OSRAM) |
| CA (1) | CA1224027A (OSRAM) |
| DE (1) | DE3462660D1 (OSRAM) |
| FR (1) | FR2550965B1 (OSRAM) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2561139B1 (fr) * | 1984-03-16 | 1986-09-12 | Comp Generale Electricite | Dispositif pour deposer une couche de silicium sur un ruban de carbone |
| FR2579372B1 (fr) * | 1985-03-25 | 1987-05-07 | Comp Generale Electricite | Procede et dispositif pour tirer un ruban constitue par un support revetu d'une couche d'un materiau semi-conducteur a partir d'un bain liquide de ce materiau |
| US4861416A (en) * | 1985-04-04 | 1989-08-29 | The United States Of America As Represented By The Administrator, National Aeronautics And Space Administration | Ribbon growing method and apparatus |
| WO2001004388A2 (en) * | 1999-07-02 | 2001-01-18 | Evergreen Solar, Inc. | Edge meniscus control of crystalline ribbon growth |
| AU2003284253A1 (en) * | 2002-10-18 | 2004-05-04 | Evergreen Solar, Inc. | Method and apparatus for crystal growth |
| US6814802B2 (en) * | 2002-10-30 | 2004-11-09 | Evergreen Solar, Inc. | Method and apparatus for growing multiple crystalline ribbons from a single crucible |
| FR2864554B1 (fr) * | 2003-12-24 | 2006-03-10 | Solarforce | Dispositif pour deposer une couche de silicium polycristallin sur un support |
| FR2884834B1 (fr) * | 2005-04-22 | 2007-06-08 | Solarforce Soc Par Actions Sim | Procede de tirage de rubans de semi-conducteur de faible epaisseur |
| FR2887262B1 (fr) * | 2005-06-17 | 2007-07-27 | Solarforce Soc Par Actions Sim | Ruban de carbone destine a etre recouvert d'une couche mince d'un materiau semi-conducteur et procede de depot d'une telle couche |
| US8092594B2 (en) * | 2005-06-17 | 2012-01-10 | Solarforce | Carbon ribbon to be covered with a thin layer made of semiconductor material and method for depositing a layer of this type |
| WO2009029761A1 (en) * | 2007-08-31 | 2009-03-05 | Evergreen Solar, Inc. | Ribbon crystal string with extruded refractory material |
| FR2959873B1 (fr) | 2010-05-04 | 2012-04-27 | Solarforce | Ruban de carbone destine a recevoir une couche d'un materiau semi-conducteur |
| JP6593093B2 (ja) * | 2015-10-22 | 2019-10-23 | 東レ株式会社 | 塗布装置、塗工装置および塗膜付ウェブの製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1503128A (en) * | 1922-04-17 | 1924-07-29 | L S & N Corp | Process and apparatus for coating corset steels |
| US2577904A (en) * | 1948-02-03 | 1951-12-11 | Armco Steel Corp | Method for hot dip coating of metal strip |
| DE1286510B (de) * | 1962-11-23 | 1969-01-09 | Siemens Ag | Verfahren zur Herstellung von bandfoermigen, aus Halbleitermaterial bestehenden Einkristallen durch Ziehen aus einer Schmelze |
| US3429734A (en) * | 1965-10-24 | 1969-02-25 | Texas Instruments Inc | Method and apparatus for coating metal strip |
| GB1487587A (en) * | 1974-12-04 | 1977-10-05 | Metals Res Ltd | Crystal growth |
| US4299648A (en) * | 1980-08-20 | 1981-11-10 | The United States Of America As Represented By The United States Department Of Energy | Method and apparatus for drawing monocrystalline ribbon from a melt |
-
1983
- 1983-08-30 FR FR8313915A patent/FR2550965B1/fr not_active Expired
-
1984
- 1984-08-20 CA CA000461390A patent/CA1224027A/fr not_active Expired
- 1984-08-24 US US06/643,927 patent/US4520752A/en not_active Expired - Fee Related
- 1984-08-28 EP EP84110209A patent/EP0141941B1/fr not_active Expired
- 1984-08-28 DE DE8484110209T patent/DE3462660D1/de not_active Expired
- 1984-08-28 AT AT84110209T patent/ATE25931T1/de not_active IP Right Cessation
- 1984-08-28 JP JP59179147A patent/JPS60232272A/ja active Granted
- 1984-08-29 AU AU32503/84A patent/AU561637B2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| FR2550965A1 (fr) | 1985-03-01 |
| CA1224027A (fr) | 1987-07-14 |
| ATE25931T1 (de) | 1987-04-15 |
| JPS60232272A (ja) | 1985-11-18 |
| EP0141941A1 (fr) | 1985-05-22 |
| AU3250384A (en) | 1985-03-07 |
| DE3462660D1 (en) | 1987-04-23 |
| FR2550965B1 (fr) | 1985-10-11 |
| US4520752A (en) | 1985-06-04 |
| EP0141941B1 (fr) | 1987-03-18 |
| AU561637B2 (en) | 1987-05-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6238031B2 (OSRAM) | ||
| US4027053A (en) | Method of producing polycrystalline silicon ribbon | |
| US4000030A (en) | Method for drawing a monocrystal from a melt formed about a wettable projection | |
| JP2020040874A (ja) | 融液上に成長した結晶シートの厚さを制御する装置および方法 | |
| US4873063A (en) | Apparatus for zone regrowth of crystal ribbons | |
| CA1081586A (en) | Method and apparatus for forming silicon crystalline bodies | |
| US5114528A (en) | Edge-defined contact heater apparatus and method for floating zone crystal growth | |
| JPH0139998B2 (OSRAM) | ||
| US3977934A (en) | Silicon manufacture | |
| US4481235A (en) | Apparatus and method for manufacturing tape-shaped silicon bodies for solar cells | |
| US4775443A (en) | Method and apparatus for zone regrowth of crystal ribbons from bulk material | |
| US4119744A (en) | Method of manufacturing semiconductor devices in which a layer of semiconductor material is provided on a substrate | |
| JP2008536793A (ja) | 薄型半導体リボンの成長方法 | |
| JPS6111914B2 (OSRAM) | ||
| US3960511A (en) | Zone melting process | |
| GB1498925A (en) | Method of manufacturing semiconductor devices in which a layer of semiconductor material is provided on a substrate apparatus for use in carrying out said method and semiconductor devices thus manufactured | |
| US3996094A (en) | Silicon manufacture | |
| JP3106182B2 (ja) | バルク単結晶の製造方法 | |
| JPS6147629A (ja) | テープに半導体材料層を付着させる方法及び装置 | |
| JP2001520160A5 (OSRAM) | ||
| JPH0310598B2 (OSRAM) | ||
| EP0253134A2 (en) | Method and apparatus for making ignorganic webs and structures formed thereof | |
| CN1906322B (zh) | 用于在衬底上淀积多晶硅层的装置 | |
| JPS5845191A (ja) | 結晶性リボンを製造するための方法及び装置 | |
| JPS59167015A (ja) | 石英器具製造方法 |