JPS5898929A - 原子層エツチング法 - Google Patents

原子層エツチング法

Info

Publication number
JPS5898929A
JPS5898929A JP19786681A JP19786681A JPS5898929A JP S5898929 A JPS5898929 A JP S5898929A JP 19786681 A JP19786681 A JP 19786681A JP 19786681 A JP19786681 A JP 19786681A JP S5898929 A JPS5898929 A JP S5898929A
Authority
JP
Japan
Prior art keywords
substrate
layer
atomic layer
etching
adsorbed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19786681A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0379862B2 (OSRAM
Inventor
Seiichi Iwamatsu
誠一 岩松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP19786681A priority Critical patent/JPS5898929A/ja
Publication of JPS5898929A publication Critical patent/JPS5898929A/ja
Publication of JPH0379862B2 publication Critical patent/JPH0379862B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP19786681A 1981-12-09 1981-12-09 原子層エツチング法 Granted JPS5898929A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19786681A JPS5898929A (ja) 1981-12-09 1981-12-09 原子層エツチング法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19786681A JPS5898929A (ja) 1981-12-09 1981-12-09 原子層エツチング法

Publications (2)

Publication Number Publication Date
JPS5898929A true JPS5898929A (ja) 1983-06-13
JPH0379862B2 JPH0379862B2 (OSRAM) 1991-12-20

Family

ID=16381631

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19786681A Granted JPS5898929A (ja) 1981-12-09 1981-12-09 原子層エツチング法

Country Status (1)

Country Link
JP (1) JPS5898929A (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4678536A (en) * 1984-11-21 1987-07-07 Hitachi, Ltd. Method of photochemical surface treatment
JP2005252186A (ja) * 2004-03-08 2005-09-15 Semiconductor Leading Edge Technologies Inc エッチング装置及びエッチング方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49390A (OSRAM) * 1972-04-15 1974-01-05
JPS50130370A (OSRAM) * 1974-04-01 1975-10-15

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49390A (OSRAM) * 1972-04-15 1974-01-05
JPS50130370A (OSRAM) * 1974-04-01 1975-10-15

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4678536A (en) * 1984-11-21 1987-07-07 Hitachi, Ltd. Method of photochemical surface treatment
JP2005252186A (ja) * 2004-03-08 2005-09-15 Semiconductor Leading Edge Technologies Inc エッチング装置及びエッチング方法

Also Published As

Publication number Publication date
JPH0379862B2 (OSRAM) 1991-12-20

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