JPS5893374A - Ｍｏｓ型半導体装置の製造方法 - Google Patents

Ｍｏｓ型半導体装置の製造方法

Info

Publication number
JPS5893374A
JPS5893374A JP56192220A JP19222081A JPS5893374A JP S5893374 A JPS5893374 A JP S5893374A JP 56192220 A JP56192220 A JP 56192220A JP 19222081 A JP19222081 A JP 19222081A JP S5893374 A JPS5893374 A JP S5893374A
Authority
JP
Japan
Prior art keywords
film
electrode
semiconductor device
sides
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56192220A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0239095B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Momose
百瀬　啓
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56192220A priority Critical patent/JPS5893374A/ja
Publication of JPS5893374A publication Critical patent/JPS5893374A/ja
Publication of JPH0239095B2 publication Critical patent/JPH0239095B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Drying Of Semiconductors (AREA)
JP56192220A 1981-11-30 1981-11-30 Ｍｏｓ型半導体装置の製造方法 Granted JPS5893374A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56192220A JPS5893374A (ja) 1981-11-30 1981-11-30 Ｍｏｓ型半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56192220A JPS5893374A (ja) 1981-11-30 1981-11-30 Ｍｏｓ型半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5893374A true JPS5893374A (ja) 1983-06-03
JPH0239095B2 JPH0239095B2 (enrdf_load_stackoverflow) 1990-09-04

Family

ID=16287654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56192220A Granted JPS5893374A (ja) 1981-11-30 1981-11-30 Ｍｏｓ型半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5893374A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6358838A (ja) * 1986-08-28 1988-03-14 Fujitsu Ltd 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6358838A (ja) * 1986-08-28 1988-03-14 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0239095B2 (enrdf_load_stackoverflow) 1990-09-04

Similar Documents

Publication Publication Date Title
US4443930A (en) Manufacturing method of silicide gates and interconnects for integrated circuits
US4945070A (en) Method of making cmos with shallow source and drain junctions
US6365472B1 (en) Semiconductor device and method of manufacturing the same
JPH09232448A (ja) 薄膜トランジスタ及びその製造方法
JPH0653168A (ja) チタニウムシリサイドコンタクト製造方法
JPS607775A (ja) 半導体装置およびその製造方法
US4076557A (en) Method for providing semiconductor devices
JPS58116775A (ja) Ｍｅｓｆｅｔ装置の製造方法及びその装置
US4728620A (en) Process for the production of a MIS-type integrated circuit
US5100816A (en) Method of forming a field effect transistor on the surface of a substrate
US4216573A (en) Three mask process for making field effect transistors
JPH03227516A (ja) 半導体装置の製造方法
JPS5893374A (ja) Ｍｏｓ型半導体装置の製造方法
JPH1064898A (ja) 半導体装置の製造方法
JPH07263674A (ja) 電界効果型半導体装置とその製造方法
JPS5836505B2 (ja) 半導体記憶装置の製造方法
JPS6160589B2 (enrdf_load_stackoverflow)
JPS60210876A (ja) 半導体装置の製造方法
JPH01143358A (ja) Ｍｏｓ型半導体集積回路装置の製造方法
JPH0332030A (ja) 半導体装置の製造方法
CA1168765A (en) Method for making short channel transistor devices
JPH0349235A (ja) Ｍｏｓ型半導体装置の製造方法
JPS6395664A (ja) 半導体装置の製造方法
JPH04338650A (ja) 半導体装置の製造方法
JPS59150477A (ja) 半導体装置の製造方法