JPS5893249A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5893249A
JPS5893249A JP56190640A JP19064081A JPS5893249A JP S5893249 A JPS5893249 A JP S5893249A JP 56190640 A JP56190640 A JP 56190640A JP 19064081 A JP19064081 A JP 19064081A JP S5893249 A JPS5893249 A JP S5893249A
Authority
JP
Japan
Prior art keywords
film
substrate
area
layer
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56190640A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0445979B2 (enFirst
Inventor
Naoyuki Shigyo
直之 執行
Masamizu Konaka
小中　雅水
Makoto Dan
檀　良
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56190640A priority Critical patent/JPS5893249A/ja
Publication of JPS5893249A publication Critical patent/JPS5893249A/ja
Publication of JPH0445979B2 publication Critical patent/JPH0445979B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0121—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] in regions recessed from the surface, e.g. in trenches or grooves
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
    • H10W10/0126—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics introducing electrical active impurities in local oxidation regions to create channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
JP56190640A 1981-11-30 1981-11-30 半導体装置の製造方法 Granted JPS5893249A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56190640A JPS5893249A (ja) 1981-11-30 1981-11-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56190640A JPS5893249A (ja) 1981-11-30 1981-11-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5893249A true JPS5893249A (ja) 1983-06-02
JPH0445979B2 JPH0445979B2 (enFirst) 1992-07-28

Family

ID=16261431

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56190640A Granted JPS5893249A (ja) 1981-11-30 1981-11-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5893249A (enFirst)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62108538A (ja) * 1985-10-31 1987-05-19 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 半導体集積回路構造体
JPH02237158A (ja) * 1989-03-10 1990-09-19 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5688257A (en) * 1979-12-19 1981-07-17 Matsushita Electronics Corp Halogen bulb

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5688257A (en) * 1979-12-19 1981-07-17 Matsushita Electronics Corp Halogen bulb

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62108538A (ja) * 1985-10-31 1987-05-19 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 半導体集積回路構造体
JPH02237158A (ja) * 1989-03-10 1990-09-19 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPH0445979B2 (enFirst) 1992-07-28

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