JPS5892217A - 半導体装置作製方法 - Google Patents
半導体装置作製方法Info
- Publication number
- JPS5892217A JPS5892217A JP56191267A JP19126781A JPS5892217A JP S5892217 A JPS5892217 A JP S5892217A JP 56191267 A JP56191267 A JP 56191267A JP 19126781 A JP19126781 A JP 19126781A JP S5892217 A JPS5892217 A JP S5892217A
- Authority
- JP
- Japan
- Prior art keywords
- type
- reaction
- layers
- plasma
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 67
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims abstract description 35
- 239000012808 vapor phase Substances 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 31
- 239000012535 impurity Substances 0.000 abstract description 18
- 238000000576 coating method Methods 0.000 abstract description 12
- 239000011248 coating agent Substances 0.000 abstract description 11
- 239000007795 chemical reaction product Substances 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 238000002156 mixing Methods 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract 1
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 11
- 229910010271 silicon carbide Inorganic materials 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 229910021332 silicide Inorganic materials 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 6
- 150000001340 alkali metals Chemical group 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 229910052783 alkali metal Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 230000005672 electromagnetic field Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- -1 helium Chemical compound 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- VCZQFJFZMMALHB-UHFFFAOYSA-N tetraethylsilane Chemical compound CC[Si](CC)(CC)CC VCZQFJFZMMALHB-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- YQEZLKZALYSWHR-UHFFFAOYSA-N Ketamine Chemical compound C=1C=CC=C(Cl)C=1C1(NC)CCCCC1=O YQEZLKZALYSWHR-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000010009 beating Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 150000001720 carbohydrates Chemical class 0.000 description 1
- 150000001804 chlorine Chemical class 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56191267A JPS5892217A (ja) | 1981-11-28 | 1981-11-28 | 半導体装置作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56191267A JPS5892217A (ja) | 1981-11-28 | 1981-11-28 | 半導体装置作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5892217A true JPS5892217A (ja) | 1983-06-01 |
| JPH0341978B2 JPH0341978B2 (enrdf_load_stackoverflow) | 1991-06-25 |
Family
ID=16271694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56191267A Granted JPS5892217A (ja) | 1981-11-28 | 1981-11-28 | 半導体装置作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5892217A (enrdf_load_stackoverflow) |
Cited By (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59165468A (ja) * | 1983-03-10 | 1984-09-18 | Shin Etsu Chem Co Ltd | 太陽電池用窓枠材の製造方法 |
| JPS6085575A (ja) * | 1983-10-18 | 1985-05-15 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
| JPS60130821A (ja) * | 1983-12-19 | 1985-07-12 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
| JPS60130822A (ja) * | 1983-12-19 | 1985-07-12 | Semiconductor Energy Lab Co Ltd | 発光半導体装置の作製方法 |
| JPS60154521A (ja) * | 1984-01-23 | 1985-08-14 | Semiconductor Energy Lab Co Ltd | 炭化珪素被膜作製方法 |
| JPS62113482A (ja) * | 1985-11-12 | 1987-05-25 | Sanyo Electric Co Ltd | 光起電力装置 |
| US4845043A (en) * | 1987-04-23 | 1989-07-04 | Catalano Anthony W | Method for fabricating photovoltaic device having improved short wavelength photoresponse |
| JPH01212478A (ja) * | 1988-02-19 | 1989-08-25 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
| US5521400A (en) * | 1982-08-24 | 1996-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor photoelectrically sensitive device with low sodium concentration |
| US5543636A (en) * | 1984-05-18 | 1996-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect transistor |
| US5599732A (en) * | 1995-08-21 | 1997-02-04 | Northwestern University | Method for growing III-V semiconductor films using a coated reaction chamber |
| US5632821A (en) * | 1995-03-03 | 1997-05-27 | Anelva Corporation | Post treatment method for in-situ cleaning |
| US5849601A (en) * | 1990-12-25 | 1998-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
| US5859445A (en) * | 1990-11-20 | 1999-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device including thin film transistors having spoiling impurities added thereto |
| US6020035A (en) * | 1996-10-29 | 2000-02-01 | Applied Materials, Inc. | Film to tie up loose fluorine in the chamber after a clean process |
| US6028264A (en) * | 1982-08-24 | 2000-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor having low concentration of carbon |
| US6121161A (en) * | 1997-06-11 | 2000-09-19 | Applied Materials, Inc. | Reduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositions |
| US6180991B1 (en) | 1982-12-23 | 2001-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor having low concentration of phosphorous |
| USRE37441E1 (en) | 1982-08-24 | 2001-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
| US6337731B1 (en) | 1992-04-28 | 2002-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
| US6664566B1 (en) | 1982-08-24 | 2003-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
| US6693681B1 (en) | 1992-04-28 | 2004-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
| US7038238B1 (en) | 1985-05-07 | 2006-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a non-single crystalline semiconductor layer |
| US7109114B2 (en) | 2004-05-07 | 2006-09-19 | Applied Materials, Inc. | HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance |
| US7786482B2 (en) | 2007-12-21 | 2010-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Diode and display device including diode |
| US7808000B2 (en) | 2007-10-05 | 2010-10-05 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, display device having thin film transistor, and method for manufacturing the same |
| US7923730B2 (en) | 2007-12-03 | 2011-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and semiconductor device |
| US7994502B2 (en) | 2007-12-03 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US7998801B2 (en) | 2008-04-25 | 2011-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of thin film transistor having altered semiconductor layer |
| US8053294B2 (en) | 2008-04-21 | 2011-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of thin film transistor by controlling generation of crystal nuclei of microcrystalline semiconductor film |
| US8106398B2 (en) | 2007-10-23 | 2012-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Microcrystalline semiconductor film, thin film transistor, and display device including thin film transistor |
| US8119468B2 (en) | 2008-04-18 | 2012-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and method for manufacturing the same |
| US8138032B2 (en) | 2008-04-18 | 2012-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film transistor having microcrystalline semiconductor film |
| US8283667B2 (en) | 2008-09-05 | 2012-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| US8304775B2 (en) | 2009-03-09 | 2012-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| US8304779B2 (en) | 2007-11-01 | 2012-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, and display device having the thin film transistor |
| US8338240B2 (en) | 2010-10-01 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing transistor |
| US8525170B2 (en) | 2008-04-18 | 2013-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and manufacturing method thereof |
| US8546810B2 (en) | 2009-05-28 | 2013-10-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, display device, and electronic appliance |
| US8569120B2 (en) | 2008-11-17 | 2013-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film transistor |
| US8624254B2 (en) | 2010-09-14 | 2014-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| US8637866B2 (en) | 2008-06-27 | 2014-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55138237A (en) * | 1979-04-13 | 1980-10-28 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS55154781A (en) * | 1979-05-22 | 1980-12-02 | Shunpei Yamazaki | Semiconductor device |
-
1981
- 1981-11-28 JP JP56191267A patent/JPS5892217A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55138237A (en) * | 1979-04-13 | 1980-10-28 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS55154781A (en) * | 1979-05-22 | 1980-12-02 | Shunpei Yamazaki | Semiconductor device |
Cited By (55)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6664566B1 (en) | 1982-08-24 | 2003-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
| USRE37441E1 (en) | 1982-08-24 | 2001-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
| US6028264A (en) * | 1982-08-24 | 2000-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor having low concentration of carbon |
| US5521400A (en) * | 1982-08-24 | 1996-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor photoelectrically sensitive device with low sodium concentration |
| US6180991B1 (en) | 1982-12-23 | 2001-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor having low concentration of phosphorous |
| JPS59165468A (ja) * | 1983-03-10 | 1984-09-18 | Shin Etsu Chem Co Ltd | 太陽電池用窓枠材の製造方法 |
| US6503771B1 (en) | 1983-08-22 | 2003-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor photoelectrically sensitive device |
| JPS6085575A (ja) * | 1983-10-18 | 1985-05-15 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
| JPS60130822A (ja) * | 1983-12-19 | 1985-07-12 | Semiconductor Energy Lab Co Ltd | 発光半導体装置の作製方法 |
| JPS60130821A (ja) * | 1983-12-19 | 1985-07-12 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
| JPS60154521A (ja) * | 1984-01-23 | 1985-08-14 | Semiconductor Energy Lab Co Ltd | 炭化珪素被膜作製方法 |
| US6221701B1 (en) | 1984-05-18 | 2001-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect transistor and its manufacturing method |
| US5543636A (en) * | 1984-05-18 | 1996-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect transistor |
| US6635520B1 (en) | 1984-05-18 | 2003-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Operation method of semiconductor devices |
| US7038238B1 (en) | 1985-05-07 | 2006-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a non-single crystalline semiconductor layer |
| US5556794A (en) * | 1985-05-07 | 1996-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device having low sodium concentration |
| US6043105A (en) * | 1985-05-07 | 2000-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor sensitive devices |
| JPS62113482A (ja) * | 1985-11-12 | 1987-05-25 | Sanyo Electric Co Ltd | 光起電力装置 |
| US4845043A (en) * | 1987-04-23 | 1989-07-04 | Catalano Anthony W | Method for fabricating photovoltaic device having improved short wavelength photoresponse |
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Also Published As
| Publication number | Publication date |
|---|---|
| JPH0341978B2 (enrdf_load_stackoverflow) | 1991-06-25 |
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