JPS5887836A - Substrate and pellet bonding using the same - Google Patents
Substrate and pellet bonding using the sameInfo
- Publication number
- JPS5887836A JPS5887836A JP56185429A JP18542981A JPS5887836A JP S5887836 A JPS5887836 A JP S5887836A JP 56185429 A JP56185429 A JP 56185429A JP 18542981 A JP18542981 A JP 18542981A JP S5887836 A JPS5887836 A JP S5887836A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- solvent
- epoxy paste
- pellet
- holes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/3205—Shape
- H01L2224/32057—Shape in side view
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はエポキシペーストヲ用いて半導体ペレットヲ基
板上にボンディングするベレットボンディング方法に関
する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a pellet bonding method for bonding a semiconductor pellet onto a substrate using an epoxy paste.
従来、この樵のベレットボンディング方法においては、
基板１の上にベレット２をエポキシペースト３で固定し
ている。Conventionally, in this woodcutter's pellet bonding method,
A pellet 2 is fixed onto a substrate 1 with epoxy paste 3.
しかし、このような従来のベレットボンディング方式で
は、基板１は一定の厚さの版状のベレットボンディング
部を有するものであるので、エポキシペースト中の溶剤
を全部除去できないという問題があった。丁なわち、ベ
レントボンディング後キエアベークを、たとえば２００
Ｃで１時間行なうがエポキシペーストに含まれる溶剤は
ベレット２および基板１を通過できないので、エポキシ
ペースト中をベレット周辺まで拡散し、大気中に飛散す
る。However, in such a conventional bullet bonding method, since the substrate 1 has a plate-shaped bullet bonding portion with a constant thickness, there is a problem that all the solvent in the epoxy paste cannot be removed. In other words, after the berent bonding, the air bake is performed for example 200 ml.
C for one hour, but since the solvent contained in the epoxy paste cannot pass through the pellet 2 and the substrate 1, it diffuses in the epoxy paste to the vicinity of the pellet and scatters into the atmosphere.
この場曾、ベレット端Ａから近い距離ＸＩにあるＢから
は溶剤が２００Ｃ１時間で答易に抜は出れる。一方、ベ
レット端Ａから遠い距離にあるＣ点からは溶剤が２００
ｔ：”で１時間のベータで抜けきれない。抜けきれずに
残った溶剤はその鎌のワイヤボンディング時の加熱にエ
リ出て来てベレットを汚し、ワイヤボンディングの接合
強度を著し〈低下させる。またその後のレジンモールド
後ペレットとレジンの密着性を低下させ、耐湿性を劣化
させる。またモールド時のギーアベークとか、その後の
加熱処理時に、残っていた溶剤がレジンモールドとベレ
ットの間に出て米て、レジンモールドとベレットの密着
性を低下させろ。In this case, the solvent can be easily extracted from B, which is located at a distance XI from the end of the pellet A, in 200C in 1 hour. On the other hand, from point C, which is far from the end of the pellet A, the solvent is
t:", it cannot be removed after 1 hour of beta. The remaining solvent will come out when the sickle is heated during wire bonding, staining the pellet, and significantly reducing the bonding strength of wire bonding. Also, after the resin molding, the adhesion between the pellet and the resin decreases, and the moisture resistance deteriorates.Also, during the gear bake during molding and the subsequent heat treatment, residual solvent may come out between the resin mold and the pellet. Please reduce the adhesion between the resin mold and the pellet.
一方、溶剤を全部飛び出させようと−ｆ６と１０時間と
か、２０時間のベークが会費となり、素子特性上好まし
くなく、また大量のベ−り炉を準備しなければならず、
運転費用も大きい１゜本発明の目的は、前記従来技術の
欠点を解消し、エポキシペースト中の溶剤のガス４・容
易に放出させ、良好なベレットボンディングを行うこと
のできる基板およびそれを用いたベレットボッディング
方法を提供することにりる。On the other hand, in order to get all the solvent out, baking for 10 or 20 hours with F6 is required, which is not desirable in terms of device characteristics, and a large number of baking furnaces must be prepared.
The operating cost is also high.1 The purpose of the present invention is to solve the drawbacks of the prior art described above, to provide a substrate that can easily release the solvent gas in the epoxy paste, and to perform good bullet bonding, and to provide a substrate using the same. To provide a method of bellet bodding.
この目的を達成するため、本発明１−シ、半導体ペレｙ
トＹエポキシペーストナ用いてベレットホンディングす
るときに、エポキシペーストからの溶剤のガスがキュア
ベーク中に短時間に全部飛んでしまうように孔の開いた
基板を用い４）こと′？特徴以下、本発明を図面に示す
一実施例にしたがって詳細に説明する。In order to achieve this object, the present invention 1.
When performing bullet bonding using an epoxy paste, use a substrate with holes so that all the solvent gas from the epoxy paste can be blown away in a short time during curing baking. Features Hereinafter, the present invention will be explained in detail according to an embodiment shown in the drawings.
第２図（Ａ） 、 （Ｂ）は本発明の一実施例を示すも
ので半導体ベレット２′？エポキシペースト３を用いて
基板４にベレットホンディングしたもσ）である。FIGS. 2(A) and 2(B) show an embodiment of the present invention, and show a semiconductor pellet 2'? Bullet bonding to the substrate 4 using the epoxy paste 3 is also σ).
基板４のベレットボンディング部にはエポキシペースト
からの溶剤が飛び易いように孔５を設けておく。孔５は
この実施例の場合２個設けており、ベレット２中央近傍
のエポキシペースト３に含まれる溶剤が容易にこの孔５
を通して飛び易いようにしである。一方、孔５の大きさ
が大き丁ぎるとそこからエポキシペーストが流れ出し、
ベレットボンディングをすることができなくなる。この
ため孔５の形状は一例と【２て幅１鵡、長さ３謁の矩形
とした。A hole 5 is provided in the bullet bonding portion of the substrate 4 so that the solvent from the epoxy paste can easily fly away. Two holes 5 are provided in this embodiment, and the solvent contained in the epoxy paste 3 near the center of the pellet 2 can easily flow through the holes 5.
This makes it easy to fly through. On the other hand, if the hole 5 is too large, the epoxy paste will flow out from there.
You will no longer be able to do bullet bonding. For this reason, the shape of the hole 5 is, for example, a rectangle with a width of 1 mm and a length of 3 mm.
本実施例によれば、基板４のベレットボンディング部に
孔５を設けであることにエリ、エポキシペースト３中の
溶剤がキュアベーク中間中に孔５から全部飛ぶので、そ
の後のワイヤボンディングやレジンモールドの工程でエ
ポキシペーストからの溶剤によるベレットや基板の汚染
を確実に防止できる。According to this embodiment, since the hole 5 is provided in the bullet bonding part of the substrate 4, all of the solvent in the epoxy paste 3 is blown away from the hole 5 during the cure bake, so that it is not necessary to use the hole 5 for subsequent wire bonding or resin molding. It is possible to reliably prevent contamination of pellets and substrates due to solvent from epoxy paste during the process.
これは孔のおいていない基板に比ベエボキシペーストか
ら短時間で溶剤が飛び吊下ためである。This is because the solvent jumps from the epoxy paste and hangs down in a short time compared to a substrate without holes.
溶剤の拡散時間ｔは外部までの距離Ｘの２乗に比例する
と近似されｔ＝ｋｘ２（ｋ：比例定数）となる。従来の
場合には外部に対して最も遠い距離は、第１図に示すよ
うに、ベレットの中央であり、一方、本発明によるｍ２
凶の実施例の場合には、り小さくなり、本実施例では迅
速な醇Ａｌｌ放出作用が得られることがわかる。The diffusion time t of the solvent is approximated to be proportional to the square of the distance X to the outside, and t=kx2 (k: constant of proportionality). In the conventional case, the farthest distance to the outside is the center of the pellet, as shown in FIG.
It can be seen that in the case of the worst example, the amount is smaller, and in this example, a rapid All release effect can be obtained.
以上基板に孔を２個開けた場合の例について説明し１こ
が、本発明はかかる場合に限定されるものでなく、孔は
１個以上何個であっても良い。また孔の形状も矩形に限
定されず円形、十字形、三角形など加工ができればどん
な形でも効果がある。An example in which two holes are formed in the substrate has been described above; however, the present invention is not limited to such a case, and the number of holes may be one or more. Further, the shape of the hole is not limited to a rectangle, but any shape that can be processed, such as a circle, a cross, or a triangle, will be effective.
また、孔はプレスで開けても、エツチング等で開けても
よく、その形状に関係しない。Furthermore, the holes may be made by pressing or by etching, regardless of their shape.
以上説明したように、本発明によれば、エポキシペース
ト中の溶剤を迅速に放出でき、確実なベレットボンディ
ングを行うことができる。As explained above, according to the present invention, the solvent in the epoxy paste can be quickly released, and reliable bullet bonding can be performed.
第１図は従来のベレットボンディング状態を示す断面図
、第２１囚と（Ｂ）はそれぞれ本発明の一実施例を示す
断面図と平面図である。
２・・・ベレット、３・・・エポキシペースト、４・・
・基板、５・・・エポキシペースト中の溶剤の放出用の
孔。FIG. 1 is a cross-sectional view showing a conventional bullet bonding state, and FIG. 21 and (B) are a cross-sectional view and a plan view, respectively, showing an embodiment of the present invention. 2...Bellet, 3...Epoxy paste, 4...
- Substrate, 5... Holes for releasing the solvent in the epoxy paste.
Claims (1)
ングするための基板において、ベレットボンディング部
にエポキシペースト中の溶剤のガスを放出する孔を有す
ることを特徴とする基板。 ２、前記孔が基板のベレットボンディング部に複数個設
けられていること暑特徴とする特許請求の範囲第１項記
載の基板。 ３、半導体ベレットをエポキシペーストによりボンディ
ングする方法において、ベレットボンディング部にエポ
キシペースト中の溶剤のガスを放出するための孔を有す
る基板を用いることを特徴と７るベレットボンディング
方法。[Scope of Claims] 1. A substrate for bonding semiconductor pellets with epoxy paste, characterized in that the pellet bonding portion has holes for releasing gas from a solvent in the epoxy paste. 2. The substrate according to claim 1, wherein a plurality of the holes are provided in the bullet bonding portion of the substrate. 3. A method for bonding semiconductor bullets with epoxy paste, characterized in that a substrate having holes for releasing gas of a solvent in the epoxy paste is used in the bullet bonding part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56185429A JPS5887836A (en) | 1981-11-20 | 1981-11-20 | Substrate and pellet bonding using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56185429A JPS5887836A (en) | 1981-11-20 | 1981-11-20 | Substrate and pellet bonding using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5887836A true JPS5887836A (en) | 1983-05-25 |
Family
ID=16170625
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56185429A Pending JPS5887836A (en) | 1981-11-20 | 1981-11-20 | Substrate and pellet bonding using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5887836A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60249351A (en) * | 1984-05-24 | 1985-12-10 | Fujitsu Ltd | Boil-cooled type circuit board |
| JPS60254644A (en) * | 1984-05-31 | 1985-12-16 | Fujitsu Ltd | Circuit board for ebullition/cooling |
| JPH0268936A (en) * | 1988-09-02 | 1990-03-08 | Matsushita Electron Corp | Semiconductor device |
-
1981
- 1981-11-20 JP JP56185429A patent/JPS5887836A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60249351A (en) * | 1984-05-24 | 1985-12-10 | Fujitsu Ltd | Boil-cooled type circuit board |
| JPH038587B2 (en) * | 1984-05-24 | 1991-02-06 | Fujitsu Ltd | |
| JPS60254644A (en) * | 1984-05-31 | 1985-12-16 | Fujitsu Ltd | Circuit board for ebullition/cooling |
| JPH0315822B2 (en) * | 1984-05-31 | 1991-03-04 | Fujitsu Ltd | |
| JPH0268936A (en) * | 1988-09-02 | 1990-03-08 | Matsushita Electron Corp | Semiconductor device |
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