JPH10189829A - Ic package, connecting body of ic package, semiconductor device and manufacturing method of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain an IC package, in which a resin-flow preventive dam for resin sealing is formed with high accuracy and whose flatness degree is ensured by a method, wherein a plurality of lands for external electrodes are formed to be an area array shape on the rear surface of a ceramic substrate and the resin-flow preventive dam which is made of a metal or a resin is bonded to the outer circumferential part of the ceramic substrate. SOLUTION: A resin-flow preventive dam 2 which is made of a metal or a resin and which is nearly square shape is bonded to the outer circumferential part of a ceramic substrate 1. Lands 4 for wire bonding are formed on the surface of the ceramic substrate 1, and lands 5 for solder balls are formed to be an area array shape on the rear surface of the ceramic substrate 1. Since the dam 2 is formed in the outer circumferential part of the ceramic substrate 1 at an IC package 10 in this manner, it is possible to prevent a resin from flowing out to the outside from the ceramic substrate 1, when a semiconductor chip which is mounted on the ceramic substrate is resin-sealed. In addition, since the dam 2 is made of a metal or the like, a micromachining operation which conforms to the shape of the outer circumferential part of the ceramic substrate 1 can be performed easily.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a CSP (chip size package or chip scale package) formed to a size similar to a semiconductor chip size.
Type IC package.

[0002]

2. Description of the Related Art Conventionally, PGA has been used as an IC package.
Various types such as (pin grid array), BGA (ball grid array), and QFP (quad flat package) have been developed. In recent years, one side has a chip size of less than 1-2 mm. Attention has been focused on a CSP (chip size package or chip scale package) that can achieve a size reduction of 1/3 to 1/10 as compared with the same BGA in a package.

[0003]

When the CSP is to be manufactured using a conventional ceramic substrate, the following problems have been pointed out. That is, in the process of manufacturing a semiconductor device using a CSP, the semiconductor chip is sealed with a resin after the semiconductor chip is mounted on the CSP. At this time, the sealing resin may flow out of the ceramic substrate. In order to prevent this, it is necessary to attach a resin flow prevention dam to the outer peripheral portion of the ceramic substrate.

However, in the conventional CSP technology using a ceramic substrate, it is difficult to form a dam for the following reasons. That is, first of all, C
In SP, the dam width is extremely narrower than that of BGA, etc., so the ceramic green sheet is cut raw (cut in the raw state before firing) or snapped (groove in the raw state of the ceramic green sheet). It is technically difficult to form a dam by making a cut in a shape and breaking the chocolate after baking. Secondly, in the conventional BGA, the substrate is warped to correct the warpage of the substrate caused by the firing (the center of the BGA is pressed down with the weight and the firing is performed again). In the CSP, the ceramic green sheet is used. When a dam is formed, the holding by the weight is hindered by the dam, and it becomes difficult to rectify the dam.

[0005] Further, since the CSP is significantly smaller and thinner than other conventional IC packages, it has been pointed out that it is difficult to mount a semiconductor chip and to handle it during wire bonding. .

The present invention has been made in view of such problems of the prior art, and a dam for preventing the flow of the sealing resin can be formed with high precision, and the required flatness of the ceramic substrate can be ensured. An object of the present invention is to provide a CSP type IC package, a connected body of the IC package, a semiconductor device using the IC package, and a method of manufacturing the semiconductor device. Further, the present invention provides a CSP type IC package capable of facilitating handling in processes such as mounting of a semiconductor chip and wire bonding, a connected body of the IC package, a semiconductor device using the IC package, and a semiconductor device using the IC package. It is intended to provide a manufacturing method.

[0007]

An IC package according to the present invention for solving the above problems is a CSP (chip size package) type IC package in which one side is formed to have a size close to the size of a semiconductor chip. At
A ceramic substrate, a semiconductor chip mounting portion and a substrate electrode formed on the upper surface of the ceramic substrate, a plurality of external electrode lands formed in an area array on the lower surface of the ceramic substrate, and an outer peripheral portion of the ceramic substrate. It is characterized by comprising a resin or resin flow prevention dam which is joined and prevents a resin for sealing the semiconductor chip from flowing out of the ceramic substrate.

[0008] A connected body of an IC package according to the present invention connects a strip-shaped frame, a plurality of resin flow prevention dams arranged along the strip-shaped frame, and connects each of these dams to the frame. It is characterized by including a connecting portion and an IC package bonded to each of the dams.

In this IC package connector, it is preferable that the frame, the connector, and the dams are integrally formed of the same metal or resin material.

A semiconductor device according to the present invention includes a ceramic substrate, a semiconductor chip mounted on an upper surface of the ceramic substrate, solder balls for external terminals arranged in an area array on a lower surface of the ceramic substrate, and A sealing resin for sealing the semiconductor chip on the ceramic substrate; and a metal or resin resin flow prevention joined to an outer peripheral portion of the ceramic substrate to prevent the sealing resin from flowing out of the ceramic substrate. It is characterized by having a dam for use.

Further, a method of manufacturing a semiconductor device according to the present invention comprises a band-shaped frame, a resin flow prevention dam disposed along the frame, and a connecting portion for connecting the dam to the frame. A connected body of an IC package formed by joining an outer peripheral portion of the ceramic substrate to each dam of the frame with a dam is prepared in advance, and a semiconductor chip is mounted on the upper surface of each of the ceramic substrates, respectively. Wiring is performed between each semiconductor chip and each of the ceramic substrates, and a semiconductor device is formed by sealing each of these semiconductor chips with a resin. The semiconductor devices are separated from each other by separating the semiconductor devices from each other.

Further, in the method of manufacturing a semiconductor device according to the present invention, the band-shaped frame is a frame suitable for being used for mechanically transporting the ceramic substrate. The steps of mounting, wiring between the semiconductor chip and the ceramic substrate, and sealing the resin of the semiconductor chip with resin are performed while the ceramic substrate is transported in a predetermined direction by the frame.

[0013]

1 is a diagram showing an IC package according to an embodiment of the present invention, in which (a) is a perspective view, (b) is a plan view, and (c) is a bottom view. In FIG. 1, reference numeral 1 denotes a ceramic substrate, 2 denotes a metal-made resin flow prevention dam which is joined to the outer peripheral portion of the ceramic substrate 1 and has a substantially rectangular shape in plan view; The semiconductor chip mounting portion 4 is a land for wire bonding formed on the upper surface of the ceramic substrate 1, and the solder ball land 5 is formed in an area array on the lower surface of the ceramic substrate 1. As described above, in the IC package 10 shown in FIG. 1, since the dam 2 is formed on the outer peripheral portion of the ceramic substrate 1, when the semiconductor chip mounted on the ceramic substrate 1 is resin-sealed, It is prevented from flowing out of the ceramic substrate 1. Further, since the dam 2 is made of metal, it is possible to easily perform fine processing according to the shape of the outer peripheral portion of the ceramic substrate 1.

Next, FIG. 2A is a plan view showing a damped frame used for manufacturing the IC package of FIG. 1, and FIG. 2B is a partially enlarged view thereof. In FIG. 2, reference numeral 11 denotes a metal frame such as 42Alloy, 2 denotes a substantially U-shaped dam integrally formed with the same material as the frame 11, and 13 denotes an integrally formed frame with the same material as the frame 11. A connecting portion (hanging pin) for connecting the dam 2 and the frame 11 is a hole formed at a constant pitch for use to mechanically convey the frame 11 at a constant speed. It is.

FIG. 3 is a view showing a ceramic substrate used for manufacturing the IC package shown in FIG. 1. Reference numeral 1 denotes a ceramic substrate, and reference numeral 22 denotes a dam bonding formed on the outer peripheral portion of the upper surface of the ceramic substrate 1. The pad. The pad 22 is formed by tungsten metallization formed on the outer peripheral portion of the upper surface of the ceramic substrate 1 and nickel plating formed thereon. Note that FIG.
In FIG. 1, the substrate electrodes (see reference numeral 4 in FIG. 1) and external electrode lands (see reference numeral 5 in FIG. 1) formed on the ceramic substrate 1 are not shown.

FIG. 4 shows the damped frame 1 shown in FIG.
FIG. 4 is a view showing a connected body of an IC package formed by bonding a dam bonding pad 22 of the ceramic substrate 1 of FIG. 3 to a dam 2 of FIG. This bonding is performed by bringing the dam bonding pad 22 of the ceramic substrate 1 into contact with the dam 2 and brazing it at a temperature of about 900 ° C. using Ag low, AuSn, or the like, or resin bonding such as epoxy resin. This is performed by bonding with an agent. As described above, a CSP type IC package (see reference numeral 10 in FIG. 1) in which the dam 2 is joined to the outer peripheral portion of the ceramic substrate 1 is formed.
3 form an IC package connector 30 connected to each other.

FIG. 5 is a diagram for explaining a method of manufacturing a semiconductor device using the IC package connector 30 of FIG. The linked body 30 of the IC package is transported at a constant speed in the direction of arrow α in FIG. 5A during each of the manufacturing steps of the semiconductor device described below. In the manufacture of the semiconductor device, first, the semiconductor chip 31 is mounted on the semiconductor chip mounting portion 3 (see FIG. 1) of the ceramic substrate 1 (FIG. 5B). Next, the semiconductor chip 31 and the wire bonding lands 4 on the ceramic substrate 1 (see FIG. 1).
(FIG. 5 (c)). Next, the semiconductor chip and the wiring are sealed with the resin 32 (FIG. 5D). At this time, since the dam 2 is formed on the outer peripheral portion of the ceramic substrate 1, the resin 32 is prevented from flowing out of the ceramic substrate 1. Thereafter, a solder ball 33 is formed on the lower surface of the ceramic substrate 1 to form a semiconductor device (FIG. 5).
(E)). Finally, the connecting portion (hanging pin) 13 is cut off to separate each semiconductor device from the frame 11, thereby completing a CSP type semiconductor device 40 on which a semiconductor chip is mounted (FIG. 5 (f)).

Although the embodiment of the present invention has been described above, the present invention is not limited to this embodiment. For example, in the above embodiment, the frame 1
1, the connecting portion 13 and the dam 2 are made of metal, but the present invention is not limited to this, and a resin film frame, connecting portion and dam may be used. Of course.

[0019]

As described above, the IC according to the present invention is used.
According to the package, a metal or resin dam is joined to the outer periphery of the ceramic substrate, so that even in a CSP type IC package that is much smaller than a conventional BGA or the like, the sealing resin can be prevented from flowing. It is possible to create a high-quality dam. In addition, since a metal or resin dam is joined to the outer peripheral portion of the ceramic substrate as described above, after the flatness of the ceramic substrate is sufficiently ensured by work such as recoil after firing, Or resin dams can be joined, so that the problem that the flatness of the ceramic substrate cannot be ensured because it is difficult to rectify when forming a dam using ceramic green sheets can be avoided. Become.

Further, according to the linked body of IC packages according to the present invention, since each IC package is connected to the belt-like frame by the dam, handling of the IC package is facilitated, and the manufacturing process of the semiconductor device is greatly improved. Become more efficient.

Further, according to the connected body of the IC package according to the present invention, the frame, the dam and the connecting portion constituting the frame with the dam are integrally formed of the same metal or resin material. The entire frame with a dam can be manufactured at low cost. Further, since each of the dams is made of metal or resin, a narrow dam can be formed with high precision. In particular, when the dam is made of metal, the dam is not deformed by a small force when the dam is joined to the IC package, and the workability in manufacturing the IC package is greatly improved.

According to the semiconductor device of the present invention,
Since a metal or resin dam is bonded to the outer periphery of the ceramic substrate, even in a semiconductor device using a CSP that is much smaller than a conventional BGA or the like,
The dam for preventing the sealing resin from flowing can be formed with high precision. In addition, since a metal or resin dam is joined to the outer peripheral portion of the ceramic substrate as described above, after the flatness of the ceramic substrate is sufficiently ensured by work such as recoil after firing, Or resin dams can be joined, so that the problem that the flatness of the ceramic substrate cannot be ensured because it is difficult to rectify when forming a dam using ceramic green sheets can be avoided. Become.

Further, according to the method of manufacturing a semiconductor device of the present invention, the semiconductor device is manufactured by using a connected body of the IC package formed by connecting the IC package to the dam of the band-shaped frame. Even with a CSP that is much smaller than a conventional BGA or the like, handling in processes such as mounting of a semiconductor chip and wire bonding becomes extremely easy, and the manufacturing process of a semiconductor device is greatly improved.

Further, according to the method of manufacturing a semiconductor device of the present invention, the semiconductor chip is mounted on the ceramic substrate, wire-bonded, and the semiconductor chip is mechanically conveyed in the predetermined direction by the strip-shaped frame. Since each process such as resin sealing is performed, the manufacturing process of the semiconductor device is greatly improved.

[Brief description of the drawings]

FIG. 1 is a view showing an IC package according to an embodiment of the present invention, wherein (a) is a perspective view, (b) is a plan view, and (c) is a bottom view.

FIG. 2A is a diagram showing a damped frame used for manufacturing the IC package of FIG. 1, and FIG. 2B is a partially enlarged view thereof.

FIG. 3 is a view showing a ceramic substrate used for manufacturing the IC package of FIG. 1;

FIG. 4 shows the dam 2 of the frame 15 with dam shown in FIG.
FIG. 3 is a view showing a connected body of an IC package formed by bonding dam bonding pads 22 of the ceramic substrate 1 of FIG.

5 is a view for explaining a method of manufacturing a semiconductor device using the IC package connector 30 of FIG. 4;

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 ceramic substrate 2 resin flow prevention dam 3 semiconductor chip mounting portion 4 wire bonding land 5 solder ball land 10 IC package 11 frame 13 connection portion (suspension pin) 14 hole 22 dam bonding pad 30 IC package connection body 31 Semiconductor chip 32 resin 33 solder ball 40 semiconductor device

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Toshiro Arima 1-1-1, Hachiman, Kumamoto City, Kumamoto Prefecture Inside Kyushu Nippon Electric Co., Ltd. (72) Inventor Takeo Miura 1-1-1, Yawata, Kumamoto City, Kumamoto Prefecture Kyushu Nippon Electric Co., Ltd.

Claims (6)

[Claims] 1. A CSP (chip size package) type IC package in which one side is formed in a size similar to a semiconductor chip size, a ceramic substrate, and a semiconductor chip mounting portion formed on an upper surface of the ceramic substrate. And a plurality of external electrode lands formed in an area array on the lower surface of the ceramic substrate; and a resin bonded to an outer peripheral portion of the ceramic substrate to seal a semiconductor chip. An IC package, comprising: a metal or resin dam for preventing resin from flowing to the outside. 2. A connected body of an IC package formed by connecting a plurality of the IC packages according to claim 1, wherein a band-shaped frame and a plurality of the resin flow prevention arranged along the band-shaped frame. A connected body of IC packages, comprising: a dam for use; a connecting portion for connecting each of these dams to the frame; and an IC package connected to each of the dams. 3. The IC package according to claim 2, wherein the frame, the connecting portion, and the dams are integrally formed of the same material. Concatenation of 4. A semiconductor device using the IC package according to claim 1, wherein a ceramic substrate, a semiconductor chip mounted on an upper surface of the ceramic substrate, and an area array are arranged on a lower surface of the ceramic substrate. An external terminal solder ball, a sealing resin for sealing a semiconductor chip on the ceramic substrate, and a metal bonded to an outer peripheral portion of the ceramic substrate to prevent the sealing resin from flowing out of the ceramic substrate. A semiconductor device comprising: a resin or resin dam for preventing resin flow. 5. A method of manufacturing a semiconductor device according to claim 4, wherein the band-shaped frame, a dam for preventing resin flow arranged along the frame, and the dam are provided on the frame. A connecting body of an IC package is prepared in advance by joining an outer peripheral portion of the ceramic substrate to each dam of a frame with a dam constituted by a connecting portion for connecting to each of the ceramics. A semiconductor device is formed by mounting a semiconductor chip on the upper surface of each substrate, performing wiring between each of these semiconductor chips and each of the ceramic substrates, and sealing each of these semiconductor chips with a resin. Each of the semiconductor devices is separated from each other by cutting each connecting portion and separating each dam from the frame. The method of manufacturing a semiconductor device according to. 6. The method of manufacturing a semiconductor device according to claim 5, wherein the belt-shaped frame is a frame suitable for mechanically transporting the ceramic substrate, and wherein the ceramic of the semiconductor chip is formed. The steps of mounting on the substrate, wiring the semiconductor chip and the ceramic substrate, and sealing the resin of the semiconductor chip with resin are performed while the ceramic substrate is transported in a predetermined direction by the frame. Semiconductor device manufacturing method.