JPS60234333A - Heat treatment device - Google Patents
Heat treatment deviceInfo
- Publication number
- JPS60234333A JPS60234333A JP8943184A JP8943184A JPS60234333A JP S60234333 A JPS60234333 A JP S60234333A JP 8943184 A JP8943184 A JP 8943184A JP 8943184 A JP8943184 A JP 8943184A JP S60234333 A JPS60234333 A JP S60234333A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- pellet
- air
- gas
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83194—Lateral distribution of the layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔技術分野〕
本発明は加熱処理技術に関し、％に半導体装置の製造に
おけるペレットボンディングの際の、加熱処理に利用し
て有効な技術に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to heat treatment technology, and particularly relates to a technology that is effective when used in heat treatment during pellet bonding in the manufacture of semiconductor devices.
半導体装置の組立工程に、リードフレームのタブ等のベ
レット取り付は部にペレットを固定するベレットボンデ
ィング作業が考えられる。このペレットボンディングの
技術の一つに、第１図（ａ）〜（ｃ）に示すように銀ペ
ーストによって固定する方法が考えられる。すなわち、
この方法ではまず同図（ａｌで示すように、リードフレ
ーム１−のタブ２上に銀ペースト４を塗布する。その後
、同図（ｂ）で示すように、コレット５でペレット６を
真空吸着保持して銀ペースト４上にこすり付けて仮固定
（取り付け）する。次に、同図（ｃ）で示すように、仮
固定したリードフレームを多数ボックス炉７に入れてベ
ーキングし、銀ペーストを硬化させベレットをタブに固
定する。In the assembly process of semiconductor devices, pellet attachment of tabs and the like of a lead frame may involve a pellet bonding operation in which a pellet is fixed to a portion of the lead frame. One possible technique for this pellet bonding is a method of fixing with silver paste as shown in FIGS. 1(a) to 1(c). That is,
In this method, first, as shown in the same figure (al), silver paste 4 is applied on the tab 2 of the lead frame 1-.After that, as shown in the same figure (b), the pellet 6 is held by vacuum suction with the collet 5. and then rub it onto the silver paste 4 to temporarily fix (attach) it.Next, as shown in FIG. and secure the beret to the tab.
ところで、このようなベレットボンディング方法では次
のような欠点があることが本発明者によって見い出され
た。By the way, the present inventor has discovered that such a bullet bonding method has the following drawbacks.
（１）銀ペーストを加熱すると各種のガスが発生し、こ
のガスがベレットのポンディングパッド（アルミニウム
からなる電極）を汚染するため、その後のワイヤボンデ
ィング工程でペレ、・トのポンディングパッドにワイヤ
を接続した場合、その接続強度は弱（簡単に剥離してし
まうおそれがある。(1) When silver paste is heated, various gases are generated and these gases contaminate the pellet's bonding pad (electrode made of aluminum). When connected, the connection strength is weak (it may peel off easily).
（２） ペーキング工程で発生したガスはベレット表面
等に付着するため、その後のレジンモールド時にレジン
との界面に残留し耐湿性の低下を来たしてしまう。(2) Since the gas generated in the paking process adheres to the pellet surface, etc., it remains at the interface with the resin during subsequent resin molding, resulting in a decrease in moisture resistance.
この欠点を解決するペレ・トボンディング技術として、
銀ペースト層のベーキング時に発生するガスがペレット
の表面等に付着しないように、清浄気体をペレットに吹
き付けるとともに周囲のガスの強制排気を行いながら加
熱して行う方法が提案され得る、
しかしながら、上述した方法にあっては、排気中のガス
がベレットやリードフレームに接触するため、ベレット
等にガスが付着するという問題点があることが本発明者
によって明らかにされた。Pellet bonding technology solves this drawback.
In order to prevent the gas generated during baking of the silver paste layer from adhering to the surface of the pellet, a method may be proposed in which cleaning gas is sprayed onto the pellet and heating is performed while forcibly exhausting the surrounding gas. However, as mentioned above, The inventor of the present invention has found that this method has a problem in that the gas in the exhaust comes into contact with the pellet and the lead frame, resulting in the gas adhering to the pellet and the like.
本発明の目的は、ベーキング中に生じるガスのペレット
等への付着を防止することができる加熱処理技術を提供
するにある。An object of the present invention is to provide a heat treatment technique that can prevent gas generated during baking from adhering to pellets and the like.
本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
。The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.
本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、次の通りである。A brief overview of typical inventions disclosed in this application is as follows.
すなわち、通気路をベレットに対向して開口させるとと
もに、この開口の周囲に吸気路を開口させることにより
、ペーストから発生したガスをペレットやリードフレー
ム等に接触させないように吸い込むようにしたものであ
る。That is, by opening the ventilation passage facing the pellet and opening the intake passage around this opening, the gas generated from the paste is sucked in without coming into contact with the pellet, lead frame, etc. .
第２図は本発明の一実施例である加熱処理装置を示す一
部破砕正面図、第３図は第２図■−■線に沿う拡大部分
断面図である。FIG. 2 is a partially exploded front view showing a heat treatment apparatus according to an embodiment of the present invention, and FIG. 3 is an enlarged partial sectional view taken along line 2--2 in FIG.
本実施例において、この加熱処理装置は搬送ライン１１
を形成する一対のガイドレール１２を備えており、両ガ
イドレール１２は互いに対向して平行に敷設され、多連
リードフレーム８の長手方向両側端部を摺動自在に嵌合
して架橋状態で一方向に移動させ得るように構成されて
いる、多連リードフレーム８は、タブ２に塗布されｆこ
たとえば銀ペースト４上にベレット６を仮固定された単
位リードフレームＪ（第１図参照）を複数枚連設された
ものである。ガイドフレーム１２の側方には間欠送り機
構（図示せず）が多連リードフレーム８を所定のピッチ
で間欠的に搬送するように設備されている。搬送ライン
１１の一端にはローダ（図示せず）が多連リードフレー
ム８を１枚ずつ払い出すように、また他端にはアンロー
ダ（図示せず）が多連リードフレーム８をラインから１
枚ずつ受け取るようにそれぞれ設備されている。In this embodiment, this heat treatment device is a conveyor line 11.
A pair of guide rails 12 are provided to form a bridge, and both guide rails 12 are laid parallel to each other, facing each other, and slidably fit on both ends of the multiple lead frame 8 in the longitudinal direction to form a bridge. A multi-lead frame 8, which is configured to be movable in one direction, is a unit lead frame J (see FIG. 1) in which a tab 2 is coated and a pellet 6 is temporarily fixed onto a silver paste 4, for example. This is a series of multiple sheets. An intermittent feed mechanism (not shown) is installed on the side of the guide frame 12 to intermittently feed the multiple lead frames 8 at a predetermined pitch. At one end of the conveyance line 11, a loader (not shown) takes out the multiple lead frames 8 one by one, and at the other end, an unloader (not shown) unloads the multiple lead frames 8 one by one from the line.
Each one is equipped to receive one piece at a time.
搬送ライン１１の真下には、加熱手段として、たとえば
、２００〜４００℃程度の加熱が可能なヒートフロック
１３がエレベータ１４に上下動されるように支持されて
設けられており、このヒートブロック１３は上死点にお
いて多連リードフレーム８の製図にほぼ当接するように
なっている。Immediately below the conveyance line 11, a heat block 13 capable of heating, for example, about 200 to 400°C is provided as a heating means and is supported so as to be moved up and down by an elevator 14. At the top dead center, it almost comes into contact with the drawing of the multiple lead frame 8.
ヒートブロック１３の真上には通気プロ・ツク１５が、
ヒートブロック１３が多連リードフレーム８に当接しｆ
こときに、このフレーム８に上から軽く接触するように
設けられている。通気ブロック１５には複数の通気路１
６が多連リードフレーム８上の各ペレット６に対向して
開口するようにそれぞれ形成され、各通気路１６の周囲
には吸気路１７が開口を取り囲んでベレット６の周囲空
間に臨むようにそれぞれ形成されている。通気路１６の
他端は清浄なドライエアを供給されるクリーンベンチ（
図示せず）において開口され、吸気路１７は接続口１８
を介して適当な吸引手段に接続されている。Directly above the heat block 13 is the ventilation pro-tsuku 15.
When the heat block 13 comes into contact with the multiple lead frame 8, f
At times, it is provided so as to lightly touch the frame 8 from above. The ventilation block 15 has a plurality of ventilation passages 1.
6 are formed to open opposite to each pellet 6 on the multi-lead frame 8, and around each air passage 16, an intake passage 17 surrounds the opening and faces the space surrounding the pellet 6. It is formed. The other end of the ventilation path 16 is a clean bench (which is supplied with clean dry air).
), and the intake passage 17 is opened at the connection port 18 (not shown).
via which it is connected to suitable suction means.
次に作用を説明する、
タブ２に塗布された銀ペースト４上にベレット６を仮固
定された単位リードフレームｌを複数枚連設された多連
リードフレーム８は、ラック（図示せず）に多数枚収容
される。ラックに収容された多連リードフレーム８は、
ローダと送り機構とノ協働により１枚ずつガイドレール
１２間に払い出される。Next, the operation will be explained. A multi-lead frame 8 in which a plurality of unit lead frames L each having a pellet 6 temporarily fixed on a silver paste 4 applied to a tab 2 is installed in a rack (not shown). A large number of sheets can be stored. The multiple lead frame 8 housed in the rack is
The sheets are delivered one by one between the guide rails 12 by the cooperation of the loader and the feed mechanism.
多連リードフレーム８が所定位置で間欠停止されると、
ヒートブロック１３がエレベータ１４により上昇されて
リードフレーム８の裏面にほぼ当接される。これにより
、リードフレーム８は、たとえば２００〜４００℃程度
に加熱される。この加熱により、銀ペースト４は硬化し
て行くが、銀ペースト４からは不純ガス（たとえば、ｃ
、ｃｉ。When the multiple lead frame 8 is intermittently stopped at a predetermined position,
The heat block 13 is raised by the elevator 14 and almost comes into contact with the back surface of the lead frame 8. Thereby, the lead frame 8 is heated to, for example, about 200 to 400°C. By this heating, the silver paste 4 hardens, but impurity gas (for example, c
, ci.
Ｓ等）１９が発生する。S, etc.) 19 occurs.
ヒートブロック１３がリードフレーム８に当接されると
、通気ブロック１５がリードフレーム８０表面を軽く押
え、吸気路】７はベレット６の周囲の空間を吸引する。When the heat block 13 comes into contact with the lead frame 8, the ventilation block 15 lightly presses the surface of the lead frame 80, and the air intake path 7 sucks the space around the pellet 6.
これにより、通気路１６からクリーンペンチ内の清浄な
ドライエアが吸い込まれ、このドライエアがベレット６
の上面に軽く吹き付けられてベレｙトロの主表面にエア
カーテン（防護気層）が形成されることになる。したが
って、銀ペースト４から発生した不純ガス１９はこのエ
アカーテンに遮られてベレット６に接触することはない
。遮られた不純ガス１９は吸気路１７を介して真上にド
ライエアと一緒に吸引されるため、リードフレームの方
向に流れることはなく、これに接触することもない。し
たがって、ベレット６およびリードフレームが不純ガス
１９により汚染されることは防止される。As a result, clean dry air inside the clean pliers is sucked from the ventilation path 16, and this dry air is transferred to the pellet 6.
An air curtain (protective air layer) will be formed on the main surface of the beret by being lightly sprayed on the top surface of the beret. Therefore, the impure gas 19 generated from the silver paste 4 is blocked by this air curtain and does not come into contact with the pellet 6. Since the blocked impure gas 19 is sucked directly above together with the dry air through the air intake path 17, it does not flow toward the lead frame and does not come into contact with it. Therefore, the pellet 6 and the lead frame are prevented from being contaminated by the impure gas 19.
適当な時間が経過すると、銀ペースト４が硬化しベレッ
ト６はリードフレーム８に本固定される。After a suitable period of time has elapsed, the silver paste 4 hardens and the pellet 6 is permanently fixed to the lead frame 8.
その後、ヒートブロック】３が下降され、多連リードフ
レーム８が送り機構によりアンローダに受け渡される。Thereafter, the heat block 3 is lowered, and the multiple lead frame 8 is delivered to the unloader by the feeding mechanism.
（１）ベレットに対向して通気路を設け、この通気路の
周囲に吸気路を設げることにより、ペレット上に防護気
層を形成させることができ、かつ、ペーストから発生し
た不純ガスをリードフレームに接触させることな（吸引
排気させることができるため、不純ガスがベレットおよ
びリードフレームに付着することを防止できる。(1) By providing a ventilation path facing the pellet and providing an intake path around this ventilation path, a protective air layer can be formed on the pellet, and impurity gas generated from the paste can be removed. Since it can be suctioned and exhausted without contacting the lead frame, it is possible to prevent impure gas from adhering to the pellet and lead frame.
（２）通気路をクリーンベンチに開口させることにより
、専用の送気手段を必要とせずに、清浄な防護気層をベ
レット上に形成させることがで釣る。(2) By opening the ventilation path into the clean bench, a clean protective air layer can be formed on the pellet without the need for a dedicated air supply means.
（３） 通気路を送気手段に接続することにより、防護
気層の制御が容易に実施できる。(3) By connecting the ventilation path to the air supply means, the protective air layer can be easily controlled.
（４）ベレットおよびリードフレームに不純ガスが付着
しないことにより、その後の工程であるワイヤボンディ
ングにおいて所望の接着強度をもってワイヤボンディン
グでキル。(4) Since impurity gas does not adhere to the pellet and lead frame, the wire bonding can be completed with the desired adhesive strength in the subsequent wire bonding process.
（５）ベレットおよびリードフレームに不純ガスが付着
しないことにより、耐湿性を低下させることな（モール
ドできる。(5) Since impurity gas does not adhere to the pellet and lead frame, molding is possible without deteriorating moisture resistance.
以上本発明者によってなされた発明を実施例に基づき具
体的に説明しｆこが、本発明は前記実施例に限定される
ものではなく、その要旨を逸脱しない範囲で種々変更可
能であることはいうまでもない。The invention made by the present inventor has been specifically described above based on Examples. However, the present invention is not limited to the above-mentioned Examples, and it is understood that various changes can be made without departing from the gist of the invention. Needless to say.
たとえば、清浄気体はドライエアに限らず、窒素（Ｎ、
）等の不活性ガスでもよい。For example, clean gas is not limited to dry air, but also nitrogen (N,
) or other inert gas may be used.
搬送ラインは直進形、回転形を問わないし、搬送方式も
間欠式、連続式を問わない、、また、ベレットを取り伺
げるペーストは銀ペーストに限定されず、他の合成樹脂
ペーストでもよい。The conveyance line does not matter whether it is linear or rotating, and the conveyance method does not matter whether it is intermittent or continuous, and the paste that can pick up the pellets is not limited to silver paste, but may be any other synthetic resin paste.
第１図（ａ）〜（ｃ）はベレットボンディング方法を示
す概略図、
第２図は本発明の一実施例を示す一部切断側面図、
第３図は第２図■−■線に沿う拡大部分断面図である。
１・・・単位リードフレーム（ポンディング部材）、２
・・・タブ（取り付は部）、４・・・銀ペースト、５・
・・コレット、６・・・ペレット、８・・・多連リード
フレーム、１１・・・搬送ライン、１２・・・ガイドレ
ール、１３・・・ヒートブロック（加ｍ手段）、１４・
・・エレベータ、】５−通気ブロック、１６・・・通気
路、１７・・・吸気路、１８・・・接続口、１９・・・
不純ガス。
又−
第 １ 図
第 ２ 図 第 ３ 図Figures 1 (a) to (c) are schematic diagrams showing a bullet bonding method, Figure 2 is a partially cutaway side view showing an embodiment of the present invention, and Figure 3 is taken along the line ■-■ in Figure 2. It is an enlarged partial sectional view. 1... Unit lead frame (ponding member), 2
...Tab (installation part), 4...Silver paste, 5.
... Collet, 6... Pellet, 8... Multi-lead frame, 11... Conveyance line, 12... Guide rail, 13... Heat block (applying means), 14...
...Elevator, ]5-Vent block, 16...Vent passage, 17...Intake passage, 18...Connection port, 19...
Impure gas. Also - Figure 1 Figure 2 Figure 3
Claims (1)
加熱手段と、前記加熱手段に載置された前記被処理体を
搬送する搬送手段と、前記被処理体を囲むように前記加
熱手段上に設けられている被覆手段とからなる加熱処理
装置であって、前記被覆手段には前記被処理体に対して
ガスを吹きつけ得るガス供給路と、前記ガス供給路とは
別個なガス排気路が設けられていることを特徴とする加
熱処理装置。 ２、前記加熱手段と前記被覆手段とは、被処理体を介し
て、それらにより密閉空間を形成していることを特徴と
する特許請求の範囲第１項記載の加熱処理装置。 ３、ガス供給路は、被処理体に対して突出したガス供給
口を有し、ガス排気路は、前記ガス供給口よりも上部に
ガス排気口を有することを特徴とする特許請求の範囲第
１項記載の加熱処理装置。 ４、 ガス供給路から吹きつゆられるガスは、クリーン
ベンチにより清潔化されたガスを用いることを特徴とす
る特許請求の範囲第１項記載の加熱処理装置。 ５、 ガス供給路は、送気手段に接続されていることを
特徴とする特許請求の範囲第１項記載の加熱処理装置。[Scope of Claims] 1. A heating means capable of placing an object to be processed and heating the object to be processed, a conveyance means for transporting the object to be processed placed on the heating means, and a means for transporting the object to be processed placed on the heating means; A heat treatment apparatus comprising: a covering means provided on the heating means so as to surround the object; A heat treatment apparatus characterized in that a gas exhaust path is provided that is separate from a supply path. 2. The heat processing apparatus according to claim 1, wherein the heating means and the coating means form a closed space with the object to be processed interposed therebetween. 3. The gas supply path has a gas supply port that protrudes toward the object to be processed, and the gas exhaust path has a gas exhaust port above the gas supply port. The heat treatment apparatus according to item 1. 4. The heat treatment apparatus according to claim 1, wherein the gas blown from the gas supply path is cleaned by a clean bench. 5. The heat treatment apparatus according to claim 1, wherein the gas supply path is connected to an air supply means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8943184A JPS60234333A (en) | 1984-05-07 | 1984-05-07 | Heat treatment device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8943184A JPS60234333A (en) | 1984-05-07 | 1984-05-07 | Heat treatment device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60234333A true JPS60234333A (en) | 1985-11-21 |
Family
ID=13970470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8943184A Pending JPS60234333A (en) | 1984-05-07 | 1984-05-07 | Heat treatment device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60234333A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63239957A (en) * | 1987-03-27 | 1988-10-05 | Nec Corp | Manufacture of semiconductor device |
| JPS63316444A (en) * | 1987-06-19 | 1988-12-23 | Hitachi Electronics Eng Co Ltd | Heating device in silver paste curing device |
-
1984
- 1984-05-07 JP JP8943184A patent/JPS60234333A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63239957A (en) * | 1987-03-27 | 1988-10-05 | Nec Corp | Manufacture of semiconductor device |
| JPS63316444A (en) * | 1987-06-19 | 1988-12-23 | Hitachi Electronics Eng Co Ltd | Heating device in silver paste curing device |
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