JPS61101040A - Bonding device - Google Patents
Bonding deviceInfo
- Publication number
- JPS61101040A JPS61101040A JP59222098A JP22209884A JPS61101040A JP S61101040 A JPS61101040 A JP S61101040A JP 59222098 A JP59222098 A JP 59222098A JP 22209884 A JP22209884 A JP 22209884A JP S61101040 A JPS61101040 A JP S61101040A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- wire
- lead
- gas
- location
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7801—Means for cleaning, e.g. brushes, for hydro blasting, for ultrasonic cleaning, for dry ice blasting, using gas-flow, by etching, by applying flux or plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8501—Cleaning, e.g. oxide removal step, desmearing
- H01L2224/85013—Plasma cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01018—Argon [Ar]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Abstract
Description
【発明の詳細な説明】
［技術分野］
本発明はボンディング技術に関し、特に、半導体装置の
組立におけるワイヤボンディング工程に適用して有効な
技術番こ関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to bonding technology, and particularly to a technology that is effective when applied to a wire bonding process in the assembly of semiconductor devices.
［背景技術］
半導体装置の組立工程においては、リードフレームの・
タブ上に固定されたベレットとリードとの電気的な接続
を達成するため、次に述べるようなワイヤボンディング
を行うことが考えられる。[Background technology] In the assembly process of semiconductor devices, the lead frame
In order to achieve electrical connection between the pellet fixed on the tab and the lead, it is possible to perform wire bonding as described below.
すなわち、金（Ａｕ）などからなるボンディングワイヤ
をワイヤを接続工具であるキャピラリに挿通し、キャピ
ラリ先端部に突出されたワイヤの先端を、たとえば電気
トーチで溶融させ溶融部の表面張力によってボールを形
成さ・ｌ、予め所定の温度に加熱されているベレットの
ボンディングワイヤにボンディングワイヤのボールをキ
ャピラリ先端部で押圧して圧着させる。That is, a bonding wire made of gold (Au) or the like is inserted into a capillary, which is a connecting tool, and the tip of the wire protruding from the tip of the capillary is melted using, for example, an electric torch, and a ball is formed by the surface tension of the molten part. Step 1: Press the ball of the bonding wire with the tip of the capillary to the bonding wire of the pellet, which has been preheated to a predetermined temperature.
次に、キャピラリを移動させると同時にワイヤをキャピ
ラリ先端部から引き出してループを形成させ、このルー
プ端のワイヤを予め所定の温度に加熱されたリード端部
のボンディング個所に押圧して圧着させたのち、クラン
パにワイヤをクランブさせた状態でクランパを移動させ
、圧着部からワイヤを切り離して一対のボンディングパ
７Ｆおよびボンディング個所の、ワイヤによる電気的な
接 １続が達成されるものである。Next, as the capillary is moved, the wire is pulled out from the tip of the capillary to form a loop, and the wire at the end of this loop is pressed and crimped against the bonding point of the lead end, which has been heated to a predetermined temperature. , the clamper is moved with the wire clamped in the clamper, and the wire is separated from the crimping portion, thereby achieving electrical connection between the pair of bonding pads 7F and the bonding location using the wire.
しかしながら、上記のワイヤボンディングにおいては、
ワイヤボンディングに先立って行われる ”タブ上への
ベレットの接着工程で用いられるＡｇペーストなどの接
着剤に含有される有機物の飛沫やリード表面に形成され
た酸化膜が除去されないままボンディングが行われるた
め、ワイヤ側面部とり一１′のボンディング個所表面で
構成されるボンディング部に前記の有機物や酸化膜が介
在してワイヤとリードのボンディング個所との接合強度
が低下し、ワイヤがリードのボンディング個所から剥離
するなどの不都合があることを本発明者は見い出した。However, in the above wire bonding,
This is because bonding is performed prior to wire bonding without removing organic droplets contained in the adhesive such as Ag paste used in the process of bonding the pellet to the tab and the oxide film formed on the lead surface. , the above-mentioned organic matter and oxide film are present in the bonding portion formed by the surface of the bonding portion of the wire side section 1', reducing the bonding strength between the wire and the bonding portion of the lead, and causing the wire to separate from the bonding portion of the lead. The present inventor has found that there are disadvantages such as peeling.
なお、ワイヤボンディング技術について詳しく述べであ
る文献としては、株式会社工業調査会、１９８２年１１
月１５日発行「電子材料」１９８２年１１月号別冊、Ｐ
１６３〜Ｐ１６Ｂがある。In addition, a document that describes wire bonding technology in detail is Kogyo Chosukaikai Co., Ltd., November 1982.
"Electronic Materials" November 1982 issue special edition, published on the 15th of May, P
There are 163 to P16B.
［発明の目的］
本発明の目的は、信頼性の高いボンディングを行うこと
が可能なボンディング技術を提供することにある。[Object of the Invention] An object of the present invention is to provide a bonding technique that allows highly reliable bonding.
本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
。The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.
［発明の概要］
本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、次の通りである。[Summary of the Invention] A brief overview of typical inventions disclosed in this application is as follows.
すなわち、ワイヤボンディングに先立って、ワイヤボン
ディングが行われる第１の位置または第２の位置の少な
くとも一方に電離された気体によるクリーニングを施す
クリーニング部を設け、被ワイヤボンディング位置に付
着する有機物や酸化膜などの異物を除去することによっ
て、ボンディング部に異物が介在することをＶ月１ニし
て信頼性の高いワイヤボンディングを達成するものであ
る。That is, prior to wire bonding, a cleaning section that performs cleaning with ionized gas is provided at at least one of the first position and the second position where wire bonding is performed to remove organic substances and oxide films that adhere to the wire bonding position. By removing foreign matter such as, the presence of foreign matter in the bonding portion can be prevented and highly reliable wire bonding can be achieved.
［実施例］
第１図は本発明の一実施例であるワイヤボンディング装
置の平面Ｍである。[Example] FIG. 1 is a plane M of a wire bonding apparatus which is an example of the present invention.
本実施例のボンディング装置では、第１図９紙面内にお
いて移動自在なＸＹテーブル１０上にはボンディングヘ
ッド１１が位置され、このホンディングヘソｌ用１には
、紙面に垂直な平１面内においてＸＹＺ方向に移動自在
なポンプイングアーＪ、１２が設けられている。In the bonding apparatus of this embodiment, a bonding head 11 is placed on an XY table 10 that is movable within the plane of the paper in FIG. A pumping gear J, 12 that is movable in the XYZ directions is provided.
ボンディングアーム１２の先端部にはワイヤ接続工具で
あるキャピラリ１３が固定されている。A capillary 13, which is a wire connection tool, is fixed to the tip of the bonding arm 12.
キャピラリ１３の下方にはフレームフィーダ１４が設け
られ、フレームフィーダ１４上に位置されるリードフレ
ーム：２０が図中の左から右方向へ所定のピンチで逐次
移動される構造とされてい、る。A frame feeder 14 is provided below the capillary 13, and the lead frame 20 positioned on the frame feeder 14 is configured to be moved sequentially from left to right in the figure with a predetermined pinch.
リードフレーム２０の中央部に設けられたタブ２１の周
囲近傍には複数のり一部２２が配置されている。A plurality of glue portions 22 are arranged near the periphery of a tab 21 provided at the center of the lead frame 20 .
タブ２１の上には前工程でタブ２１に、たとえばＡ、ｇ
ベーストなどの接着剤で接着されて固定されたベレット
３０が位置され、このペレ・ノド３０上に形成されてい
る複数のボンディングバ・ノド３１ （第１の位置）も
リードフレーム２２の先端部のボンディング個所２３
（第２の位置）との間がキャピラリ１３に挿通されるボ
ンディングワイヤによってワイヤボンディングされる。On the tab 21, for example, A, G are added to the tab 21 in the previous process.
A pellet 30 that is fixed by bonding with an adhesive such as baset is positioned, and a plurality of bonding bar throats 31 (first position) formed on this pellet throat 30 are also located at the tip of the lead frame 22. Bonding point 23
(second position) is wire-bonded by a bonding wire inserted through the capillary 13.
フレ、−ムフィーダ１４の上手に位置されるリードフレ
ーム２０の上方にはアーム４１を介してクリーニングユ
ニット４０に支持されるクリーニングチャンバ４２ （
クリーニング部）が設けられている。Above the lead frame 20 located above the frame feeder 14 is a cleaning chamber 42 (
cleaning section) is provided.
第２図は第１図において線■−■で示される部分の略断
面図を示すものである。FIG. 2 is a schematic cross-sectional view of the portion indicated by the line ■--■ in FIG. 1.
クリーニングチャンバ４２はリードフレームにおけるタ
ブ２１の周囲に配置されるリード２２の先端部の複数の
ボンディング個所２３を覆うように額縁状に形成され、
その下端面は開放されて、クリーニングチャンバ４２内
に設けられた電極４３とボンディング個所２３が所定の
間隔で対向される構造とされている。The cleaning chamber 42 is formed in a frame shape so as to cover a plurality of bonding locations 23 at the tips of the leads 22 arranged around the tabs 21 in the lead frame.
Its lower end surface is open, and the electrode 43 provided in the cleaning chamber 42 and the bonding location 23 are configured to face each other at a predetermined interval.
クリーニングチャンバ４２内にはアーム４１内の空洞部
を介して１．クリーニングユニ・ノド４．０内に設けら
れガスソース４１１、圧力制御機構４１２、流量旧４１
３、バルブ４１４などを経由してアルゴンガス（気体）
が供給される構造とされている。Inside the cleaning chamber 42, 1. A gas source 411, a pressure control mechanism 412, and a flow rate old 41 are installed in the cleaning unit throat 4.0.
3. Argon gas (gas) via valve 414, etc.
The structure is such that it is supplied with
さらに、電極４３とリードのボンディング個所２３はク
リーニングユニット４０内に設けられたクリーニング電
＃４４に、たとえば電極４３が陽極、リードのボンディ
ング個所２３が陰極となるように接続され、適時に電極
４３とボンディング個所２３との間のアルゴンガス雰囲
気中で放電が行われ、電離されたアルゴンイオンが電極
４３とボンディング個所２３との間の電界によって加速
され陰極のボンディング個所２３に衝突されてリードの
ボンディング個所２３の表面に付着している有機物や酸
化膜などの異物が除去されると共に、ボンディング個所
２３の表面には放電による放電痕によって適度の凹凸が
形成される構造とされている。Further, the electrode 43 and the bonding point 23 of the lead are connected to a cleaning electrode #44 provided in the cleaning unit 40, for example, so that the electrode 43 becomes an anode and the bonding point 23 of the lead becomes a cathode. A discharge occurs in an argon gas atmosphere between the bonding point 23 and the ionized argon ions are accelerated by the electric field between the electrode 43 and the bonding point 23 and collide with the bonding point 23 of the cathode, thereby forming a bonding point of the lead. The structure is such that foreign substances such as organic substances and oxide films adhering to the surface of the bonding portion 23 are removed, and appropriate irregularities are formed on the surface of the bonding portion 23 by discharge traces caused by discharge.
次に、本実施例の作用について説明する。Next, the operation of this embodiment will be explained.
フレームフィーダ１４」二のリードフレーム２０はタブ
２１が丁度クリーニングチャンバ４２の中央直下に位置
されるピンチで逐次第１図の左から右方向に移動される
。The lead frames 20 of the frame feeder 14 are successively moved from left to right in FIG. 1 by pinching so that the tabs 21 are located just below the center of the cleaning chamber 42.
リードフレームのタブ２１がクリーニングチャンバ４２
の中央直下に位置されると、タブ２１の周囲に配置され
た複数のり一部２２の先端部のボンディング個所２３は
角形断面形状のクリーニングチャンバ４２の開放部直下
に位置される。The tab 21 of the lead frame is in the cleaning chamber 42
When the bonding point 23 at the tip of the plurality of glue portions 22 arranged around the tab 21 is located directly below the center of the cleaning chamber 42 having a rectangular cross-sectional shape, the bonding location 23 is located directly below the opening of the cleaning chamber 42 having a rectangular cross section.
このとき、クリーニングチャンバ４２内にはアーム４１
を通じてアルゴンガスが供給され、クリーニングチャン
バ４２内はアルゴンガス雰囲気とされると共に、電極４
３とボンディング個所２３との間には所定の電圧が印加
され放電が行われる。At this time, the arm 41 is inside the cleaning chamber 42.
Argon gas is supplied through the cleaning chamber 42 to create an argon gas atmosphere, and the electrode 4
A predetermined voltage is applied between the bonding point 3 and the bonding point 23 to cause discharge.
このとき、放電によって雰囲気のアルゴンガスの一部が
電離されることにより、形成されたアルゴンイオンは電
極４３とリードのボンディング個所２３との間の電界に
よって加速され陰極のボンディング個所の表面に衝突さ
れる。At this time, a part of the argon gas in the atmosphere is ionized by the discharge, and the formed argon ions are accelerated by the electric field between the electrode 43 and the bonding location 23 of the lead and collide with the surface of the bonding location of the cathode. Ru.
こうして、リードのボンディング個所２３の表面に４１
着された、たとえばＡｇペースト飛沫などの有機物やリ
ード材料の酸化膜などの異物が除去され、ボンディング
個所２３の表面は清浄にされる。In this way, 41
The deposited foreign substances such as organic substances such as Ag paste droplets and oxide films of lead materials are removed, and the surface of the bonding location 23 is cleaned.
上記のようにして清浄にされたリード、特にそのボンデ
ィング個所２３は所定のピンチだけ移動され、キャピラ
リ１３の下方に移動される。The lead thus cleaned, in particular its bonding point 23, is moved by a predetermined pinch and moved below the capillary 13.
キャピラリ１３の下方のフレームフィーダ１４にはヒー
トブロック（図示せず）が設けられタブ２１上のベレソ
１〜とり一部２２の先端部のボンディング個所２３が所
定の温度に加熱される。A heat block (not shown) is provided in the frame feeder 14 below the capillary 13, and the bonding locations 23 at the tips of the veresos 1 to 22 on the tab 21 are heated to a predetermined temperature.
次に、キャピラリＩ３に挿通されたワイヤの先端部に形
成されたボールがキャピラリ１３の先端によってペレッ
ト３０上のホンディングバッド３１に押圧されワイヤ端
のボールはホンディングバッドに圧着される。Next, the ball formed at the tip of the wire inserted into the capillary I3 is pressed by the tip of the capillary 13 against the bonding pad 31 on the pellet 30, and the ball at the end of the wire is crimped to the bonding pad.
次に、キャピラリ１３ばワイヤを引き出してループを形
成しながら移動されると同時にＸＹテーブル１０が適宜
移動されキャピラリ１３の先端は目的のリードのボンデ
ィング個所の直上に位置決めされキャピラリ１３が降下
されてワイヤがボンディング個所２３の表面に押圧され
て圧着される。Next, the capillary 13 is pulled out and moved while forming a loop, and at the same time the XY table 10 is moved appropriately to position the tip of the capillary 13 directly above the bonding point of the target lead, and the capillary 13 is lowered to wire the wire. is pressed against the surface of the bonding location 23 and crimped.
この場合、リードのボンディング個所２３の表面の異物
が予め除去され、さらにボンディング個所２３の表面に
放電痕による適度の凹凸が形成されているため、異物な
どが介在することなくワイヤがボンディング個所２３に
なしみよく圧着されるため、異物などの介在に起因する
圧着部にワイヤボンディング強度の低下や腐食などが防
止され、後のたとえば封止工程などにおいてワイヤがボ
ンディング個所から剥離されるなどの不都合が回避され
る。In this case, the foreign matter on the surface of the bonding point 23 of the lead is removed in advance, and the surface of the bonding point 23 is also moderately uneven due to discharge traces, so that the wire can be attached to the bonding point 23 without any foreign matter intervening. Since the wire is crimped evenly, it prevents deterioration of wire bonding strength and corrosion at the crimped part due to the presence of foreign objects, and prevents inconveniences such as the wire peeling off from the bonding part during the sealing process, etc. Avoided.
次に、ワイヤがクランパにクランプされた状態でクラン
パは上昇され、ワイヤはボンディング個所２３との圧着
部の近傍で切断され、一対のホンディングバッド３１と
リードのボンディング個所２３間のワイヤボンディング
が達成され、ホンディングバッド３１とリードのボンデ
ィング個所２３は電気的に接続される。Next, the clamper is raised with the wire clamped to the clamper, and the wire is cut near the crimped portion with the bonding point 23, thereby achieving wire bonding between the pair of bonding pads 31 and the bonding point 23 of the lead. The bonding pad 31 and the bonding point 23 of the lead are electrically connected.
上記のボンディング動作を所定の回数だけ繰り返すこと
によって、−個のベレット−Ｌの複数のボンディングパ
ノＦ’ ３１とその周囲に配置された所定の複数のり一
ト２２先端部のボンディング個所２３とが高い信頼度で
ワイヤボンディングされる。By repeating the above bonding operation a predetermined number of times, the bonding points 23 at the tips of the plurality of bonding panes F' 31 of the - bullets L and the predetermined plurality of glues 22 arranged around them are made high. Wire bonded with high reliability.
［効果］
（１）、ボンディングが行われる第１の位置および第２
の位置の少なくとも一方に対してボンディングに先立っ
て、放電によって電離された気体によるクリーニングを
施すクリーニング部が設けられているため、ボンディン
グ位置の有機物や酸化膜などの異物が除去され、これら
の異物に起因するボンディング強度の低下や腐食などが
防止される。[Effects] (1) The first position and the second position where bonding is performed.
Prior to bonding, a cleaning section is provided that cleans at least one of the positions using gas ionized by discharge, so that foreign substances such as organic matter and oxide films at the bonding position are removed, and these foreign substances are This prevents a decrease in bonding strength and corrosion caused by this.
（２）、ボンディングが行われる第１の位置および第２
の位置の少なくとも一方に、クリーニング時の放電の放
電痕による適度の凹凸が形成されるため、ワイヤの圧着
部に対するなじみが良くなり、ボンディング強度が向上
する。(2) a first position where bonding is performed and a second position;
Appropriate unevenness is formed in at least one of the positions due to discharge traces caused by discharge during cleaning, so that the wire conforms to the crimped portion better and the bonding strength is improved.
（３）、前記ｆ＋１． ＋２１の結果、ワイヤのボンデ
ィング部の剥離が防止されボンディングの歩留りが向上
される。(3), said f+1. As a result of +21, peeling of the bonding portion of the wire is prevented and the bonding yield is improved.
（４）、前記（３）の結果、半導体装置などの製品の信
顛性が向」ニされる。(4) As a result of (3) above, the reliability of products such as semiconductor devices is improved.
以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない。Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.
たとえば、クリーニング部にお１）る放電を高周波電力
によって行わせることも可能である。For example, it is also possible to cause the discharge in the cleaning section 1) to be performed using high frequency power.
［利用分野］
以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野である熱圧着方式のワイヤ
ボンディング技術に適用した場合について説明したが、
それに限定されるものではなく、たとえば、ウェッジを
ワイヤ接続工具として使用する超音波ワイヤボンディン
グ技術、あるいはベレットボンディング技術に適用する
ことができる。[Field of Application] The above explanation has mainly been about the case where the invention made by the present inventor is applied to the field of application, which is the background of the invention, which is thermocompression wire bonding technology.
The present invention is not limited thereto, and can be applied to, for example, ultrasonic wire bonding technology using a wedge as a wire connection tool or bullet bonding technology.
第１図は本発明の一実施例であるワイヤボンディング装
置の平面図、
■１
第２図は、第１図において線■−■で示される部分の略
断面図である。
１０・・・ＸＹテーブル、１１・・・ボンディングヘッ
ド、１２・・・ボンディングアーム、１３・・・キャピ
ラリ、１４・・・フレームフィーダ、２０・・・リード
フレーム、２１・・・タブ、２２・・・リード、２３・
・・ボンディング個所（第２の位ｆｆ）、３０・・・ペ
レット、３１・・・ボンディングパソド（第１の位置）
、４ｏ・・・クリーニングユニット、４１・・・アーム
、４２・・・クリーニングチャンバ（クリーニング部）
、４３・・・電極、４４・・・電源。
、 ３−２０６−FIG. 1 is a plan view of a wire bonding apparatus according to an embodiment of the present invention, and (1) FIG. 2 is a schematic cross-sectional view of the portion indicated by the line (--) in FIG. 1. DESCRIPTION OF SYMBOLS 10... XY table, 11... Bonding head, 12... Bonding arm, 13... Capillary, 14... Frame feeder, 20... Lead frame, 21... Tab, 22...・Reed, 23・
...Bonding point (second digit ff), 30...Pellet, 31...Bonding path (first position)
, 4o...Cleaning unit, 41...Arm, 42...Cleaning chamber (cleaning section)
, 43... Electrode, 44... Power supply. , 3-206-
Claims (1)
位置との間の電気的な接続を達成するボンディング装置
であって、ボンディング動作に先立って第１の位置およ
び第２の位置の少なくとも一方を、電離された気体でク
リーニングするクリーニング部を有することを特徴とす
るボンディング装置。 ２、第１の位置および第２の位置がそれぞれペレット上
に形成されたボンディングパッドおよびリードフレーム
上のボンディング個所であることを特徴とする特許請求
の範囲第１項記載のボンディング装置。 ３、気体がアルゴンガスであることを特徴とする特許請
求の範囲第１項記載のボンディング装置。[Claims] 1. A bonding device that achieves electrical connection between a first location and a second location by a wire made of a conductor, the bonding device including the first location and the second location prior to a bonding operation. A bonding apparatus comprising a cleaning section that cleans at least one of the second positions with ionized gas. 2. The bonding apparatus according to claim 1, wherein the first position and the second position are a bonding pad formed on the pellet and a bonding location on a lead frame, respectively. 3. The bonding apparatus according to claim 1, wherein the gas is argon gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59222098A JPS61101040A (en) | 1984-10-24 | 1984-10-24 | Bonding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59222098A JPS61101040A (en) | 1984-10-24 | 1984-10-24 | Bonding device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61101040A true JPS61101040A (en) | 1986-05-19 |
| JPH0586857B2 JPH0586857B2 (en) | 1993-12-14 |
Family
ID=16777101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59222098A Granted JPS61101040A (en) | 1984-10-24 | 1984-10-24 | Bonding device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61101040A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02106942A (en) * | 1988-10-17 | 1990-04-19 | Nec Corp | Manufacture of semiconductor device |
| JPH0383347A (en) * | 1989-08-28 | 1991-04-09 | Sumitomo Electric Ind Ltd | Integrated circuit device and manufacture thereof |
| US5433371A (en) * | 1992-10-15 | 1995-07-18 | Matsushita Electric Industrial Co., Ltd. | Wire bonding apparatus and method |
| KR20010068777A (en) * | 2000-01-10 | 2001-07-23 | 박종섭 | Particle removal system for manufacture of ccd package |
| JP2003039728A (en) * | 2001-07-31 | 2003-02-13 | Sanyo Electric Co Ltd | Circuit unit and optical printing head with the same |
| JP2008034735A (en) * | 2006-07-31 | 2008-02-14 | Shinkawa Ltd | Bonding device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53141574A (en) * | 1977-05-16 | 1978-12-09 | Nec Corp | Manufacture of semiconductor device |
| JPS5713747A (en) * | 1980-06-27 | 1982-01-23 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
-
1984
- 1984-10-24 JP JP59222098A patent/JPS61101040A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53141574A (en) * | 1977-05-16 | 1978-12-09 | Nec Corp | Manufacture of semiconductor device |
| JPS5713747A (en) * | 1980-06-27 | 1982-01-23 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02106942A (en) * | 1988-10-17 | 1990-04-19 | Nec Corp | Manufacture of semiconductor device |
| JPH0383347A (en) * | 1989-08-28 | 1991-04-09 | Sumitomo Electric Ind Ltd | Integrated circuit device and manufacture thereof |
| US5433371A (en) * | 1992-10-15 | 1995-07-18 | Matsushita Electric Industrial Co., Ltd. | Wire bonding apparatus and method |
| KR20010068777A (en) * | 2000-01-10 | 2001-07-23 | 박종섭 | Particle removal system for manufacture of ccd package |
| JP2003039728A (en) * | 2001-07-31 | 2003-02-13 | Sanyo Electric Co Ltd | Circuit unit and optical printing head with the same |
| JP2008034735A (en) * | 2006-07-31 | 2008-02-14 | Shinkawa Ltd | Bonding device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0586857B2 (en) | 1993-12-14 |
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