JP2937954B2 - Wire bonding equipment - Google Patents

Wire bonding equipment

Info

Publication number
JP2937954B2
JP2937954B2 JP9178432A JP17843297A JP2937954B2 JP 2937954 B2 JP2937954 B2 JP 2937954B2 JP 9178432 A JP9178432 A JP 9178432A JP 17843297 A JP17843297 A JP 17843297A JP 2937954 B2 JP2937954 B2 JP 2937954B2
Authority
JP
Japan
Prior art keywords
wire bonding
inert gas
plate
bonding apparatus
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP9178432A
Other languages
Japanese (ja)
Other versions
JPH1126493A (en
Inventor
昌紀 落合
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Yamagata Ltd
Original Assignee
NEC Yamagata Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Yamagata Ltd filed Critical NEC Yamagata Ltd
Priority to JP9178432A priority Critical patent/JP2937954B2/en
Publication of JPH1126493A publication Critical patent/JPH1126493A/en
Application granted granted Critical
Publication of JP2937954B2 publication Critical patent/JP2937954B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/78251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/78268—Discharge electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/787—Means for aligning
    • H01L2224/78703—Mechanical holding means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/787—Means for aligning
    • H01L2224/78743—Suction holding means
    • H01L2224/78744—Suction holding means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01007—Nitrogen [N]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は半導体装置等の電子
装置を製造するワイヤボンディグ装置に係り、特にリー
ドフレームの裏面が２００℃の加熱を伴うワイヤボンデ
ィングの際生じる酸化物を、不活性ガス噴出孔を設ける
ことにより生成を抑制させモールド処理をしてもクラッ
ク等が発生しない高信頼性電子装置を製造するのに有効
な技術に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding apparatus for manufacturing an electronic device such as a semiconductor device, and more particularly, to a method for removing an oxide generated at the time of wire bonding on a back surface of a lead frame by heating at 200.degree. The present invention relates to a technique effective for manufacturing a highly reliable electronic device in which generation is suppressed by providing an ejection hole and a crack or the like does not occur even when a molding process is performed.

【０００２】[0002]

【従来の技術】従来、リードフレームの裏面酸化防止と
して裏面上に酸化防止用被膜を設けたり、また例えば特
開昭６３−２６６８４６号公報に開示されているよう
に、押さえ具により表面側から押さえたリードフレーム
の裏面に不活性ガスを吹きつけていた。2. Description of the Related Art Conventionally, a coating for preventing oxidation has been provided on the back surface of a lead frame to prevent oxidation on the back surface, and a holding member has been used to hold the lead frame from the front side as disclosed in, for example, Japanese Patent Application Laid-Open No. 63-266846. An inert gas was blown on the back surface of the lead frame.

【０００３】[0003]

【発明が解決しようとする課題】しかしながら酸化防止
用被膜を設ける方法は２００℃の加熱処理を伴うワイヤ
ボンディングの際の酸化防止には有効ではなく、かつこ
の被膜を形成するために余分の工数を必要とする。However, the method of providing an antioxidant film is not effective in preventing oxidation during wire bonding involving a heat treatment at 200 ° C., and requires extra steps to form this film. I need.

【０００４】一方、リードフレームの裏面に不活性ガス
を吹きつける方法は酸化防止に有効である。しかし従来
技術では、押さえ具によりリードフレームを表面（上
面）側から押さえていたから、裏面から吹き付ける不活
性ガスによりリードフレームの特にアイランド及びその
周辺のワイヤボンディングする箇所が浮いてしまう。On the other hand, a method of blowing an inert gas onto the back surface of the lead frame is effective for preventing oxidation. However, in the prior art, since the lead frame is pressed from the front surface (upper surface) side by the pressing tool, the inert gas blown from the back surface causes the lead frame, particularly the island and the periphery thereof to be wire-bonded, to float.

【０００５】これは従来のように上側からの押さえ手段
の場合は、リードフレームの周辺箇所を押さえることし
か出来ず、ワイヤボンディングするリードフレームの裏
面箇所をヒータプレートに密着させることが出来ないか
らである。[0005] This is because, in the case of the conventional pressing means from above, it is only possible to press the peripheral portion of the lead frame, and it is not possible to bring the back surface portion of the lead frame to be wire-bonded into close contact with the heater plate. is there.

【０００６】このためにボンディング条件が変化し、ワ
イヤ接続不良等が発生してしまう。これは、リードフレ
ームの上記浮き上がりにより、ヒートアップしているリ
ードフレームを冷却してしまい熱圧着時の妨げになるか
らである。As a result, the bonding conditions change, and poor wire connection and the like occur. This is because the rising of the lead frame cools the heated lead frame, which hinders thermocompression bonding.

【０００７】ワイヤボンディング装置において特にリー
ドフレームの裏面で２００℃の加熱処理を伴うワイヤボ
ンディングの際に生ずる酸化物がモールドの処理後、モ
ールド剤と銅との間に極めて剥がれ易い酸化物層が残存
してしまう。そのためアイランド裏面に溜った水分が蒸
気化して空穴ができ裏面モールド剤にふくれが発生しク
ラックを誘発してしまう。[0007] In a wire bonding apparatus, an oxide layer particularly generated at the time of wire bonding accompanied by heat treatment at 200 ° C on the back surface of the lead frame leaves an oxide layer which is extremely easily peeled between the molding agent and copper after the mold processing. Resulting in. For this reason, the water accumulated on the back surface of the island is vaporized to form vacancies, and blisters are generated in the back surface molding agent, thereby causing cracks.

【０００８】したがって本発明の目的は、上記従来技術
の問題を解決することにより、加熱処理を伴うワイヤボ
ンディングの際生ずる酸化物の生成を抑制し、高信頼性
電子装置を製造するのに有効なワイヤボンディング装置
を提供することである。Accordingly, an object of the present invention is to solve the above-mentioned problems of the prior art, thereby suppressing generation of oxides generated during wire bonding involving heat treatment, and being effective in manufacturing a highly reliable electronic device. The object is to provide a wire bonding apparatus.

【０００９】[0009]

【課題を解決するための手段】本発明の特徴は、ヒータ
プレートに設けた複数の不活性ガス吹出孔より窒素ガス
等の不活性ガスを噴出させることによりリードフレーム
の裏面の酸化を防止し、更にバキューム孔を設けて前記
リードフレームを前記ヒータプレート等の下部部材に真
空吸着することにより前記リードフレームの浮きを抑え
るワイヤボンディング装置にある。ここで、前記ヒータ
プレートとヒータブロックとの間のバキューム路の所定
箇所に前記バキューム孔が前記ヒータプレートを貫通し
て設けられ、前記バキューム路の両側に複数の前記不活
性ガス吹出孔が配列していることができる。あるいは、
前記ヒータプレートに段付き窓枠を設け、前記段付き窓
枠に前記不活性ガス吹出孔となる細かい穴を多数形成し
た板部材をはめ込み、もしくは前記段付き窓枠に多孔質
の板部材をはめ込むことにより該板の該孔を前記不活性
ガス吹出孔とし、前記バキューム孔を前記板部材の中央
部を貫通して設けることができる。この場合、段付き窓
枠にはめ込む前記板部材がセラミック板であることがで
きる。A feature of the present invention is to prevent oxidation of the back surface of a lead frame by ejecting an inert gas such as nitrogen gas from a plurality of inert gas outlets provided in a heater plate. Further, there is provided a wire bonding apparatus which suppresses floating of the lead frame by providing a vacuum hole and vacuum adsorbing the lead frame to a lower member such as the heater plate. Here, the vacuum hole is provided at a predetermined position of a vacuum path between the heater plate and the heater block so as to penetrate the heater plate, and a plurality of the inert gas blowing holes are arranged on both sides of the vacuum path. Can be. Or,
A stepped window frame is provided on the heater plate, and a plate member having a large number of fine holes serving as the inert gas blowout holes is fitted into the stepped window frame, or a porous plate member is fitted into the stepped window frame. Thereby, the hole of the plate can be provided as the inert gas blowing hole, and the vacuum hole can be provided so as to penetrate a central portion of the plate member. In this case, the plate member fitted into the stepped window frame may be a ceramic plate.

【００１０】このような本発明によれば、リードフレー
ムのアイランドの裏面をバキューム孔により吸着するこ
とができるから、リードフレームの必要な裏面箇所とな
るアイランド及びその周辺箇所の裏面をヒータプレート
等に密着固定することが出来、これにより不活性ガス吹
出し孔より吹出した不活性ガスによってワイヤボンディ
ング箇所が浮くことがなく良好なボンディングを可能に
する。According to the present invention, since the back surface of the island of the lead frame can be sucked by the vacuum hole, the necessary back surface portion of the lead frame and the back surface of the periphery thereof are attached to the heater plate or the like. The wire bonding portion can be tightly fixed, thereby enabling good bonding without floating the wire bonding portion due to the inert gas blown out from the inert gas blowing hole.

【００１１】[0011]

【発明の実施の形態】本発明について図面を参照して詳
細に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail with reference to the drawings.

【００１２】図１は本発明の第１の実施の形態のワイヤ
ボンディング装置を示す側面図及び側断面図である。ま
た図２は図１の要部を拡大して示す図であり、（Ａ）は
平面図、（Ｂ）は（Ａ）の不活性ガス吹出孔、バキュー
ム孔および不活性ガスの通路を示す断面図である。FIG. 1 is a side view and a side sectional view showing a wire bonding apparatus according to a first embodiment of the present invention. FIG. 2 is an enlarged view of a main part of FIG. 1, wherein (A) is a plan view, and (B) is a cross-section showing the inert gas blowing hole, the vacuum hole, and the passage of the inert gas of (A). FIG.

【００１３】まず図１を参照して、ボンディングヘッド
１２に結合するボンディングアーム１３の先端にキャピ
ラリー１９が取り付けられ、クランパアーム１５、ガイ
ド１６、クランパ１４のワイヤ供給機構によるワイヤ１
７がキャピラリー１９を通過して、放電電極１８により
先端にボールを形成してワイヤボンディングを行う機構
が図の上方に設けられている。First, referring to FIG. 1, a capillary 19 is attached to the tip of a bonding arm 13 coupled to a bonding head 12, and a wire 1 is provided by a wire supply mechanism of a clamper arm 15, a guide 16, and a clamper 14.
A mechanism is provided at the upper side of the figure for the wire 7 to pass through the capillary 19 and form a ball at the tip by the discharge electrode 18 to perform wire bonding.

【００１４】図の下方には、ヒータ３が内蔵されたヒー
タブロック２上にヒータプレート１が設けられ、ガイド
２０により両側面部を支持され搬送されてきたリードフ
レーム２１のアイランド２３上に搭載されたペレット２
２の電極とリードフレームの内部リードとがヒータプレ
ート２で加熱された状態でワイヤボンディングされる。In the lower part of the figure, a heater plate 1 is provided on a heater block 2 in which a heater 3 is built, and is mounted on an island 23 of a lead frame 21 which is supported and transported on both sides by a guide 20. Pellet 2
The second electrode and the internal lead of the lead frame are wire-bonded while being heated by the heater plate 2.

【００１５】図１および図２を参照して、本実施の形態
では、ヒータプレート１の底部、すなわちヒータプレー
ト１とヒータブロック２との間には、不活性ガス用パイ
プ４から供給された窒素ガス等の不活性ガス６をヒータ
３により予熱して供給する供給路１０が形成され、この
供給路１０に接続する複数の不活性ガス吹出孔８の群が
ヒータプレート１を貫通して配列し、リードフレーム２
１の酸化を防止するための加熱された不活性ガス６を上
方に吹き出すようになっている。Referring to FIGS. 1 and 2, in the present embodiment, nitrogen supplied from inert gas pipe 4 is provided between heater plate 1 and heater block 2 at the bottom of heater plate 1. A supply path 10 for supplying an inert gas 6 such as a gas by preheating by a heater 3 is formed, and a group of a plurality of inert gas blowing holes 8 connected to the supply path 10 is arranged to penetrate the heater plate 1. , Lead frame 2
The heated inert gas 6 for preventing the oxidation of 1 is blown upward.

【００１６】また不活性ガス６の吹き出しによるアイラ
ンド２３の浮きあがり防止として、バキューム孔９及び
バキューム用パイプ５に接続するバキューム路１１を設
け、バキューム（真空）７により真空吸引してアイラン
ドおよびその周辺のリードフレームのワイヤボンディン
グ箇所をヒータプレート１に密着固定する。In order to prevent the island 23 from being lifted up by the blowing of the inert gas 6, a vacuum path 11 connected to the vacuum hole 9 and the vacuum pipe 5 is provided. The wire bonding portion of the lead frame is closely fixed to the heater plate 1.

【００１７】図２（Ａ）に示すようにこの実施の形態で
は、一方向に延在するバキューム路１１の両側に複数の
不活性ガス吹出孔８が配列しているから、リードフレー
ムに配列するアイランドを、その両側から不活性ガスを
吹きつけながらヒータプレートに確実に真空吸着させる
こができる。As shown in FIG. 2A, in this embodiment, since a plurality of inert gas outlets 8 are arranged on both sides of a vacuum path 11 extending in one direction, they are arranged on a lead frame. The island can be reliably vacuum-adsorbed to the heater plate while blowing inert gas from both sides thereof.

【００１８】図２を参照すると本実施の形態では、厚さ
５ｍｍのヒータプレート１にリードフレームのアイラン
ドを固定する直径１．０ｍｍのバキューム孔９及び酸化
を抑制させる直径０．８ｍｍの不活性ガス吹出孔８群が
あり、それぞれの供給路はヒータプレート１の裏面に溝
幅３ｍｍ、深さ１ｍｍの溝により形成される。Referring to FIG. 2, in this embodiment, a vacuum hole 9 having a diameter of 1.0 mm for fixing an island of a lead frame to a heater plate 1 having a thickness of 5 mm and an inert gas having a diameter of 0.8 mm for suppressing oxidation. There are eight groups of blowing holes, and each supply path is formed on the back surface of the heater plate 1 by a groove having a groove width of 3 mm and a depth of 1 mm.

【００１９】このような構成によれば、ヒータ３の加熱
よりリードフレームの酸化を抑制するための不活性ガス
用パイプ４には不活性ガス６が供給され供給路１０を通
り不活性ガス吹出孔８からリードフレームアイランド裏
面に吹きつけられる。またこの時アイランドが不活性ガ
ス６による浮き防止のためバキューム用パイプ５よりバ
キューム孔９を通しアイランドをバキューム（真空）７
で真空吸引して固定する。According to such a configuration, the inert gas 6 is supplied to the inert gas pipe 4 for suppressing the oxidation of the lead frame by the heating of the heater 3, passes through the supply passage 10, and the inert gas blowing hole. 8 is sprayed on the back surface of the lead frame island. At this time, the island is vacuumed (vacuum) 7 through a vacuum hole 9 through a vacuum pipe 5 to prevent the island from floating due to the inert gas 6.
And secure by vacuum suction.

【００２０】次に本発明の第２の実施の形態について図
３を参照して説明する。この第２の実施の形態も図１と
同様のワイヤボンディング装置であるが、第１の実施の
形態の図２と異なる構成のみを図３に示してある。尚、
図３のおいて図１，図２と同一もしくは類似の箇所は同
じ符号を付してあるから、重複する説明はなるべく省略
する。Next, a second embodiment of the present invention will be described with reference to FIG. Although the second embodiment is also a wire bonding apparatus similar to that of FIG. 1, only a configuration different from that of FIG. 2 of the first embodiment is shown in FIG. still,
In FIG. 3, the same or similar parts as those in FIGS. 1 and 2 are denoted by the same reference numerals, and a duplicate description will be omitted as much as possible.

【００２１】図３において、ヒータプレート１に段付き
窓枠２５を設け、ここにリードフレーム酸化抑制用不活
性ガス（窒素ガス等）の不活性ガス吹出孔８となる細か
い穴８を多数形成した板部材２６、例えばセラミック板
をその上面がヒータプレート１の上面と一致するように
はめ込み、板部材２６の中央部を貫通するパイプの内面
積でバキューム孔９を構成している。この場合、板部材
２６は多孔質の板、例えば多孔質セラミック板を用い
て、この板を構成する多孔を不活性ガス吹出孔８とする
こともできる。In FIG. 3, a stepped window frame 25 is provided on the heater plate 1, and a large number of fine holes 8 are formed in the heater plate 1 to serve as inert gas blowing holes 8 for an inert gas (nitrogen gas or the like) for suppressing oxidation of a lead frame. A plate member 26, for example, a ceramic plate, is fitted so that the upper surface thereof coincides with the upper surface of the heater plate 1, and the vacuum hole 9 is formed by the inner area of a pipe passing through the central portion of the plate member 26. In this case, the plate member 26 may be a porous plate, for example, a porous ceramic plate, and the perforations constituting the plate may be used as the inert gas blowing holes 8.

【００２２】この実施の形態では吹出し孔群８により不
活性ガスをアイランド裏面の隅々まで行き渡らせること
ができ酸化物の生成を抑制できる。また、アイランドは
板部材２６に真空吸着されるから、その温度が所定の値
となるようにヒータの電力を調節する。In this embodiment, the blowout holes 8 allow the inert gas to spread to every corner of the back surface of the island, thereby suppressing the formation of oxide. Further, since the island is vacuum-adsorbed to the plate member 26, the power of the heater is adjusted so that the temperature thereof becomes a predetermined value.

【００２３】[0023]

【発明の効果】第１の効果は、加熱を伴うワイヤボンデ
ィングの際生じる酸化物によるモールド処理後のクラッ
ク発生を防止することが出来ることである。The first effect is that it is possible to prevent the occurrence of cracks after molding due to oxides generated during wire bonding involving heating.

【００２４】その理由は、アイランド裏面から不活性ガ
スを吹きつけ酸化物の生成を抑制させているからであ
る。The reason is that an inert gas is blown from the back surface of the island to suppress the formation of oxide.

【００２５】第２の効果は、不活性ガスをアイランド裏
面から吹きつけても、アイランドが浮くことはなく安定
したボンディングができるようになる。The second effect is that even if an inert gas is blown from the back surface of the island, the island does not float and stable bonding can be performed.

【００２６】その理由は、アイランド裏面をバキューム
で吸引し固定しているからである。更に不活性ガスはヒ
ータブロック内を通過するため予熱されリードフレーム
を冷却することなく吹きつけることができるからであ
る。The reason is that the back surface of the island is suctioned and fixed by vacuum. Further, since the inert gas passes through the heater block, it is preheated and can be blown without cooling the lead frame.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の第１の実施の形態のワイヤボンディン
グ装置を示した図である。FIG. 1 is a diagram showing a wire bonding apparatus according to a first embodiment of the present invention.

【図２】本発明の第１の実施の形態の要部を拡大して示
した図である。FIG. 2 is an enlarged view of a main part of the first embodiment of the present invention.

【図３】本発明の第２の実施の形態の要部を拡大して示
した図である。FIG. 3 is an enlarged view of a main part of a second embodiment of the present invention.

【符号の説明】[Explanation of symbols]

１ ヒータプレート ２ ヒータブロック ３ ヒータ ４ 不活性ガス用パイプ ５ バキューム用パイプ ６ 不活性ガス ７ バキューム（真空） ８ 不活性ガス吹出孔 ９ バキューム孔 １０ 供給路 １１ バキューム路 １２ ボンディングヘッド １３ ボンディングアーム １４ クランパ １５ クランパアーム １６ ガイド １７ ワイヤ １８ 放電電極 １９ キャピラリー ２０ ガイド ２１ リードフレーム ２２ ペレット ２３ アイランド ２５ 段付き窓枠 ２６ 板部材 DESCRIPTION OF SYMBOLS 1 Heater plate 2 Heater block 3 Heater 4 Inert gas pipe 5 Vacuum pipe 6 Inert gas 7 Vacuum (vacuum) 8 Inert gas blowing hole 9 Vacuum hole 10 Supply path 11 Vacuum path 12 Bonding head 13 Bonding arm 14 Clamper DESCRIPTION OF SYMBOLS 15 Clamper arm 16 Guide 17 Wire 18 Discharge electrode 19 Capillary 20 Guide 21 Lead frame 22 Pellet 23 Island 25 Stepped window frame 26 Plate member

Claims (6)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 ヒータプレートに設けた複数の不活性ガ
ス吹出孔より不活性ガスを噴出させることによりリード
フレームの裏面の酸化を防止し、更にバキューム孔を設
けて前記リードフレームを真空吸着することにより前記
リードフレームの浮きを抑えることを特徴とするワイヤ
ボンディング装置。An inert gas is blown out from a plurality of inert gas blowout holes provided in a heater plate to prevent oxidation of a back surface of a lead frame, and a vacuum hole is further provided to vacuum-adsorb the lead frame. A wire bonding apparatus characterized in that the lifting of the lead frame is suppressed by the following. 【請求項２】 前記ヒータプレートとヒータブロックと
の間のバキューム路の所定箇所に前記バキューム孔が前
記ヒータプレートを貫通して設けられ、前記バキューム
路の両側に複数の前記不活性ガス吹出孔が配列している
ことを特徴とする請求項１記載のワイヤボンディング装
置。2. The vacuum hole is provided at a predetermined position of a vacuum path between the heater plate and the heater block so as to penetrate the heater plate, and a plurality of the inert gas blowing holes are provided on both sides of the vacuum path. The wire bonding apparatus according to claim 1, wherein the wire bonding apparatus is arranged. 【請求項３】 前記ヒータプレートに段付き窓枠を設
け、前記段付き窓枠に前記不活性ガス吹出孔となる細か
い穴を多数形成した板部材をはめ込み、前記バキューム
孔を前記板の中央部を貫通して設けたことを特徴とする
請求項１記載のワイヤボンディング装置。3. A stepped window frame is provided on the heater plate, and a plate member having a large number of fine holes serving as the inert gas blowout holes is fitted into the stepped window frame, and the vacuum hole is formed in a central portion of the plate. 2. The wire bonding apparatus according to claim 1, wherein the wire bonding apparatus is provided so as to pass through. 【請求項４】 前記ヒータプレートに段付き窓枠を設
け、前記段付き窓枠に多孔質の板部材をはめ込むことに
より該板の該孔を前記不活性ガス吹出孔とし、前記バキ
ューム孔を前記板の中央部を貫通して設けたことを特徴
とする請求項１記載のワイヤボンディング装置。4. A stepped window frame is provided on the heater plate, and a porous plate member is fitted into the stepped window frame so that the hole of the plate is used as the inert gas blowing hole, and the vacuum hole is used as the vacuum hole. The wire bonding apparatus according to claim 1, wherein the wire bonding apparatus is provided so as to penetrate a central portion of the plate. 【請求項５】 前記板部材はセラミック板であることを
特徴とする請求項３又は請求項４記載のワイヤボンディ
ング装置。5. The wire bonding apparatus according to claim 3, wherein the plate member is a ceramic plate. 【請求項６】 前記不活性ガスは窒素ガスであることを
特徴とする請求項１記載のワイヤボンディング装置。6. The wire bonding apparatus according to claim 1, wherein said inert gas is nitrogen gas.
JP9178432A 1997-07-03 1997-07-03 Wire bonding equipment Expired - Fee Related JP2937954B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9178432A JP2937954B2 (en) 1997-07-03 1997-07-03 Wire bonding equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9178432A JP2937954B2 (en) 1997-07-03 1997-07-03 Wire bonding equipment

Publications (2)

Publication Number Publication Date
JPH1126493A JPH1126493A (en) 1999-01-29
JP2937954B2 true JP2937954B2 (en) 1999-08-23

Family

ID=16048417

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9178432A Expired - Fee Related JP2937954B2 (en) 1997-07-03 1997-07-03 Wire bonding equipment

Country Status (1)

Country Link
JP (1) JP2937954B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100401017B1 (en) * 1999-09-07 2003-10-08 앰코 테크놀로지 코리아 주식회사 Heat block and manufacturing method of semiconductor package using the same
WO2002050891A1 (en) * 2000-12-21 2002-06-27 Hitachi, Ltd. Method of manufacturing semiconductor device
JP4014579B2 (en) * 2004-04-01 2007-11-28 沖電気工業株式会社 Wire bonding apparatus and wire bonding method
JP5895861B2 (en) * 2013-01-30 2016-03-30 三菱電機株式会社 Manufacturing method of semiconductor device
JP6898009B2 (en) * 2017-08-01 2021-07-07 株式会社新川 Frame feeder
JP7458966B2 (en) * 2020-12-03 2024-04-01 三菱電機株式会社 Semiconductor device manufacturing apparatus and semiconductor device manufacturing method

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