JPS5883390A - Rom出力読出回路 - Google Patents

Rom出力読出回路

Info

Publication number
JPS5883390A
JPS5883390A JP56181801A JP18180181A JPS5883390A JP S5883390 A JPS5883390 A JP S5883390A JP 56181801 A JP56181801 A JP 56181801A JP 18180181 A JP18180181 A JP 18180181A JP S5883390 A JPS5883390 A JP S5883390A
Authority
JP
Japan
Prior art keywords
output
rom
latch
signal
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56181801A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6412040B2 (enrdf_load_stackoverflow
Inventor
Yasuhiro Yano
泰弘 矢野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56181801A priority Critical patent/JPS5883390A/ja
Publication of JPS5883390A publication Critical patent/JPS5883390A/ja
Publication of JPS6412040B2 publication Critical patent/JPS6412040B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements

Landscapes

  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
JP56181801A 1981-11-13 1981-11-13 Rom出力読出回路 Granted JPS5883390A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56181801A JPS5883390A (ja) 1981-11-13 1981-11-13 Rom出力読出回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56181801A JPS5883390A (ja) 1981-11-13 1981-11-13 Rom出力読出回路

Publications (2)

Publication Number Publication Date
JPS5883390A true JPS5883390A (ja) 1983-05-19
JPS6412040B2 JPS6412040B2 (enrdf_load_stackoverflow) 1989-02-28

Family

ID=16107084

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56181801A Granted JPS5883390A (ja) 1981-11-13 1981-11-13 Rom出力読出回路

Country Status (1)

Country Link
JP (1) JPS5883390A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02246083A (ja) * 1988-12-05 1990-10-01 Texas Instr Inc <Ti> 高速アクセス時間集積回路メモリ・アレイ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02246083A (ja) * 1988-12-05 1990-10-01 Texas Instr Inc <Ti> 高速アクセス時間集積回路メモリ・アレイ

Also Published As

Publication number Publication date
JPS6412040B2 (enrdf_load_stackoverflow) 1989-02-28

Similar Documents

Publication Publication Date Title
US5955905A (en) Signal generator with synchronous mirror delay circuit
US7276949B2 (en) Multiphase clock generation
JP2616567B2 (ja) 半導体記憶装置
JPH1186545A (ja) Dll回路及びそれを利用した半導体記憶装置
JPS61148692A (ja) 記憶装置
US6069829A (en) Internal clock multiplication for test time reduction
KR960042730A (ko) 반도체기억장치
US7466622B2 (en) Method for controlling time point for data output in synchronous memory device
JPS6346920B2 (enrdf_load_stackoverflow)
EP0080902A2 (en) Semiconductor memory device
US5956502A (en) Method and circuit for producing high-speed counts
JPS6220632B2 (enrdf_load_stackoverflow)
KR100324143B1 (ko) 반도체 메모리장치 및 번인 테스트 방법
US6781919B2 (en) Address selection circuit and semiconductor memory device with synchronous and asynchronous address signal paths
JP2002245778A (ja) 半導体装置
JPS5883390A (ja) Rom出力読出回路
JPH09185894A (ja) 高速同期型マスクロム
JPS6221196B2 (enrdf_load_stackoverflow)
US7676643B2 (en) Data interface device for accessing memory
US5654934A (en) Semiconductor memory employing a block-write system
US4949343A (en) Error detecting circuit for a decoder
JP2788729B2 (ja) 制御信号発生回路
JPS6132758B2 (enrdf_load_stackoverflow)
KR100474734B1 (ko) 동기형반도체메모리장치에적합한클럭발생회로
KR19990074904A (ko) 동기식 반도체 기억 장치를 위한 어드레스 래치장치 및 방법