JPS5880879A - 半導体素子 - Google Patents

半導体素子

Info

Publication number
JPS5880879A
JPS5880879A JP56179438A JP17943881A JPS5880879A JP S5880879 A JPS5880879 A JP S5880879A JP 56179438 A JP56179438 A JP 56179438A JP 17943881 A JP17943881 A JP 17943881A JP S5880879 A JPS5880879 A JP S5880879A
Authority
JP
Japan
Prior art keywords
semiconductor
coefficient ratio
ionization coefficient
layer
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56179438A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0526356B2 (cs
Inventor
Hiroyuki Sakaki
裕之 榊
Tomonori Tagami
知紀 田上
Hideaki Nojiri
英章 野尻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP56179438A priority Critical patent/JPS5880879A/ja
Priority to US06/437,627 priority patent/US4553317A/en
Priority to DE19823241176 priority patent/DE3241176A1/de
Publication of JPS5880879A publication Critical patent/JPS5880879A/ja
Publication of JPH0526356B2 publication Critical patent/JPH0526356B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations

Landscapes

  • Light Receiving Elements (AREA)
JP56179438A 1981-11-09 1981-11-09 半導体素子 Granted JPS5880879A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56179438A JPS5880879A (ja) 1981-11-09 1981-11-09 半導体素子
US06/437,627 US4553317A (en) 1981-11-09 1982-10-29 Method of obtaining an impact ionization coefficient rate by junction of different kinds of semiconductors
DE19823241176 DE3241176A1 (de) 1981-11-09 1982-11-08 Verfahren zum erzielen eines stossionisationskoeffizienten-verhaeltnisses durch verbinden verschiedenartiger halbleiter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56179438A JPS5880879A (ja) 1981-11-09 1981-11-09 半導体素子

Publications (2)

Publication Number Publication Date
JPS5880879A true JPS5880879A (ja) 1983-05-16
JPH0526356B2 JPH0526356B2 (cs) 1993-04-15

Family

ID=16065861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56179438A Granted JPS5880879A (ja) 1981-11-09 1981-11-09 半導体素子

Country Status (1)

Country Link
JP (1) JPS5880879A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016190346A1 (ja) * 2015-05-28 2016-12-01 日本電信電話株式会社 受光素子および光集積回路

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016190346A1 (ja) * 2015-05-28 2016-12-01 日本電信電話株式会社 受光素子および光集積回路
US10199525B2 (en) 2015-05-28 2019-02-05 Nippon Telegraph And Telephone Corporation Light-receiving element and optical integrated circuit

Also Published As

Publication number Publication date
JPH0526356B2 (cs) 1993-04-15

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