JPH0526357B2 - - Google Patents

Info

Publication number
JPH0526357B2
JPH0526357B2 JP56179439A JP17943981A JPH0526357B2 JP H0526357 B2 JPH0526357 B2 JP H0526357B2 JP 56179439 A JP56179439 A JP 56179439A JP 17943981 A JP17943981 A JP 17943981A JP H0526357 B2 JPH0526357 B2 JP H0526357B2
Authority
JP
Japan
Prior art keywords
semiconductor
ionization
electrons
present
ionization coefficient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56179439A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5880880A (ja
Inventor
Hiroyuki Sakaki
Tomonori Tagami
Hideaki Nojiri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP56179439A priority Critical patent/JPS5880880A/ja
Priority to US06/437,627 priority patent/US4553317A/en
Priority to DE19823241176 priority patent/DE3241176A1/de
Publication of JPS5880880A publication Critical patent/JPS5880880A/ja
Publication of JPH0526357B2 publication Critical patent/JPH0526357B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations

Landscapes

  • Light Receiving Elements (AREA)
JP56179439A 1981-11-09 1981-11-09 半導体素子 Granted JPS5880880A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56179439A JPS5880880A (ja) 1981-11-09 1981-11-09 半導体素子
US06/437,627 US4553317A (en) 1981-11-09 1982-10-29 Method of obtaining an impact ionization coefficient rate by junction of different kinds of semiconductors
DE19823241176 DE3241176A1 (de) 1981-11-09 1982-11-08 Verfahren zum erzielen eines stossionisationskoeffizienten-verhaeltnisses durch verbinden verschiedenartiger halbleiter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56179439A JPS5880880A (ja) 1981-11-09 1981-11-09 半導体素子

Publications (2)

Publication Number Publication Date
JPS5880880A JPS5880880A (ja) 1983-05-16
JPH0526357B2 true JPH0526357B2 (cs) 1993-04-15

Family

ID=16065879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56179439A Granted JPS5880880A (ja) 1981-11-09 1981-11-09 半導体素子

Country Status (1)

Country Link
JP (1) JPS5880880A (cs)

Also Published As

Publication number Publication date
JPS5880880A (ja) 1983-05-16

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