JPS5880803A - 抵抗値修正法 - Google Patents
抵抗値修正法Info
- Publication number
- JPS5880803A JPS5880803A JP56178350A JP17835081A JPS5880803A JP S5880803 A JPS5880803 A JP S5880803A JP 56178350 A JP56178350 A JP 56178350A JP 17835081 A JP17835081 A JP 17835081A JP S5880803 A JPS5880803 A JP S5880803A
- Authority
- JP
- Japan
- Prior art keywords
- resistance value
- resistor
- electrode
- semiconductor layer
- void
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000009792 diffusion process Methods 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000002715 modification method Methods 0.000 claims 2
- 239000011800 void material Substances 0.000 description 19
- 239000000758 substrate Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- BKAYIFDRRZZKNF-VIFPVBQESA-N N-acetylcarnosine Chemical compound CC(=O)NCCC(=O)N[C@H](C(O)=O)CC1=CN=CN1 BKAYIFDRRZZKNF-VIFPVBQESA-N 0.000 description 1
- 241000772415 Neovison vison Species 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56178350A JPS5880803A (ja) | 1981-11-09 | 1981-11-09 | 抵抗値修正法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56178350A JPS5880803A (ja) | 1981-11-09 | 1981-11-09 | 抵抗値修正法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5880803A true JPS5880803A (ja) | 1983-05-16 |
| JPS632153B2 JPS632153B2 (enrdf_load_stackoverflow) | 1988-01-18 |
Family
ID=16046949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56178350A Granted JPS5880803A (ja) | 1981-11-09 | 1981-11-09 | 抵抗値修正法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5880803A (enrdf_load_stackoverflow) |
-
1981
- 1981-11-09 JP JP56178350A patent/JPS5880803A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS632153B2 (enrdf_load_stackoverflow) | 1988-01-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH06112410A (ja) | 半導体装置およびその製造方法 | |
| JPS5880803A (ja) | 抵抗値修正法 | |
| JPS5880858A (ja) | 抵抗体 | |
| JPS60100464A (ja) | 半導体装置 | |
| JPS6024062A (ja) | 半導体装置の製造方法 | |
| JPS60234364A (ja) | 半導体装置 | |
| JPS6289355A (ja) | 半導体装置 | |
| JPS61290775A (ja) | 半導体装置 | |
| JPH0132363Y2 (enrdf_load_stackoverflow) | ||
| JPS61184859A (ja) | シリコンヒ−トシンクチツプ | |
| JP2760855B2 (ja) | 半導体製造用熱処理装置における発熱体構造及び半導体装置の熱処理方法 | |
| JPS60161625A (ja) | 圧接型電力用半導体素子 | |
| JPS63133563A (ja) | 半導体装置 | |
| JP2004247398A (ja) | 厚膜抵抗体の抵抗値調整方法 | |
| JPS62143422A (ja) | 半導体装置の製造方法 | |
| JPS61228661A (ja) | 半導体装置及びその製造方法 | |
| JPS60244058A (ja) | 半導体集積回路装置 | |
| JPS6010674A (ja) | 半導体素子の製造方法 | |
| JPS5827672B2 (ja) | 電極を有する半導体装置 | |
| JPS6185851A (ja) | 半導体装置 | |
| JPS609144A (ja) | 半導体素子用配線 | |
| JPH01307272A (ja) | 半導体不揮発性メモリの製造方法 | |
| JPS6032339A (ja) | 半導体プログラマブル素子 | |
| JPH0656371B2 (ja) | ガス検出装置 | |
| JPS61267347A (ja) | 半導体装置 |