JPS5877275A - 半導体レ−ザの製造方法 - Google Patents
半導体レ−ザの製造方法Info
- Publication number
- JPS5877275A JPS5877275A JP17604781A JP17604781A JPS5877275A JP S5877275 A JPS5877275 A JP S5877275A JP 17604781 A JP17604781 A JP 17604781A JP 17604781 A JP17604781 A JP 17604781A JP S5877275 A JPS5877275 A JP S5877275A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- groove
- type
- substrate
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000005253 cladding Methods 0.000 claims description 15
- 239000010410 layer Substances 0.000 claims 13
- 239000002344 surface layer Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 230000000903 blocking effect Effects 0.000 abstract description 6
- 238000005530 etching Methods 0.000 abstract description 5
- 230000010355 oscillation Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 2
- 102100021277 Beta-secretase 2 Human genes 0.000 description 1
- 101710150190 Beta-secretase 2 Proteins 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 240000002329 Inga feuillei Species 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17604781A JPS5877275A (ja) | 1981-11-02 | 1981-11-02 | 半導体レ−ザの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17604781A JPS5877275A (ja) | 1981-11-02 | 1981-11-02 | 半導体レ−ザの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5877275A true JPS5877275A (ja) | 1983-05-10 |
| JPS6237912B2 JPS6237912B2 (enrdf_load_stackoverflow) | 1987-08-14 |
Family
ID=16006784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17604781A Granted JPS5877275A (ja) | 1981-11-02 | 1981-11-02 | 半導体レ−ザの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5877275A (enrdf_load_stackoverflow) |
-
1981
- 1981-11-02 JP JP17604781A patent/JPS5877275A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6237912B2 (enrdf_load_stackoverflow) | 1987-08-14 |
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