JPS6237912B2 - - Google Patents
Info
- Publication number
- JPS6237912B2 JPS6237912B2 JP17604781A JP17604781A JPS6237912B2 JP S6237912 B2 JPS6237912 B2 JP S6237912B2 JP 17604781 A JP17604781 A JP 17604781A JP 17604781 A JP17604781 A JP 17604781A JP S6237912 B2 JPS6237912 B2 JP S6237912B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- groove
- type
- refractive index
- ingaasp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 29
- 238000005253 cladding Methods 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 4
- 230000012010 growth Effects 0.000 description 7
- 230000000903 blocking effect Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17604781A JPS5877275A (ja) | 1981-11-02 | 1981-11-02 | 半導体レ−ザの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17604781A JPS5877275A (ja) | 1981-11-02 | 1981-11-02 | 半導体レ−ザの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5877275A JPS5877275A (ja) | 1983-05-10 |
| JPS6237912B2 true JPS6237912B2 (enrdf_load_stackoverflow) | 1987-08-14 |
Family
ID=16006784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17604781A Granted JPS5877275A (ja) | 1981-11-02 | 1981-11-02 | 半導体レ−ザの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5877275A (enrdf_load_stackoverflow) |
-
1981
- 1981-11-02 JP JP17604781A patent/JPS5877275A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5877275A (ja) | 1983-05-10 |
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