JPS5861652A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS5861652A
JPS5861652A JP56159935A JP15993581A JPS5861652A JP S5861652 A JPS5861652 A JP S5861652A JP 56159935 A JP56159935 A JP 56159935A JP 15993581 A JP15993581 A JP 15993581A JP S5861652 A JPS5861652 A JP S5861652A
Authority
JP
Japan
Prior art keywords
chip
transistor
emitter
conductor
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56159935A
Other languages
English (en)
Japanese (ja)
Other versions
JPS647682B2 (enrdf_load_stackoverflow
Inventor
Keiichi Hirai
平井　敬一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56159935A priority Critical patent/JPS5861652A/ja
Publication of JPS5861652A publication Critical patent/JPS5861652A/ja
Publication of JPS647682B2 publication Critical patent/JPS647682B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01072—Hafnium [Hf]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Microwave Amplifiers (AREA)
JP56159935A 1981-10-07 1981-10-07 半導体装置 Granted JPS5861652A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56159935A JPS5861652A (ja) 1981-10-07 1981-10-07 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56159935A JPS5861652A (ja) 1981-10-07 1981-10-07 半導体装置

Publications (2)

Publication Number Publication Date
JPS5861652A true JPS5861652A (ja) 1983-04-12
JPS647682B2 JPS647682B2 (enrdf_load_stackoverflow) 1989-02-09

Family

ID=15704364

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56159935A Granted JPS5861652A (ja) 1981-10-07 1981-10-07 半導体装置

Country Status (1)

Country Link
JP (1) JPS5861652A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022839U (ja) * 1983-07-22 1985-02-16 日本電気株式会社 半導体装置
US4577213A (en) * 1984-03-05 1986-03-18 Honeywell Inc. Internally matched Schottky barrier beam lead diode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022839U (ja) * 1983-07-22 1985-02-16 日本電気株式会社 半導体装置
US4577213A (en) * 1984-03-05 1986-03-18 Honeywell Inc. Internally matched Schottky barrier beam lead diode

Also Published As

Publication number Publication date
JPS647682B2 (enrdf_load_stackoverflow) 1989-02-09

Similar Documents

Publication Publication Date Title
US4982311A (en) Package for very large scale integrated circuit
US5371405A (en) High-frequency high-power transistor
US4783697A (en) Leadless chip carrier for RF power transistors or the like
US5075759A (en) Surface mounting semiconductor device and method
JPH01181540A (ja) Ｔａｂパツケージ
JPS59229842A (ja) ブツシユプル半導体デバイス用のパツケ−ジ
EP0117434A1 (en) Hybrid microwave subsystem
US5751555A (en) Electronic component having reduced capacitance
JPS5861652A (ja) 半導体装置
JPH03132101A (ja) 表面実装型半導体デバイスおよび方法
JPS6255721B2 (enrdf_load_stackoverflow)
JP2880023B2 (ja) 高周波トランジスタ回路
JPS605055B2 (ja) 半導体装置
JPH02140969A (ja) 半導体集積回路装置
JPS6043022B2 (ja) マイクロ波装置モジュ−ル
JPS6035247Y2 (ja) 半導体装置
JPS6327859B2 (enrdf_load_stackoverflow)
JPS6364081B2 (enrdf_load_stackoverflow)
JPH0719148Y2 (ja) マイクロ波回路用パッケージ
JP2504051B2 (ja) 電界効果トランジスタ
JPH05211279A (ja) 混成集積回路
JPH0888319A (ja) 半導体集積回路
JPH01283951A (ja) トランジスタ装置
JPH03276745A (ja) 半導体装置
JPH04320041A (ja) 厚膜混成集積回路