JPS5861650A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS5861650A JPS5861650A JP16132881A JP16132881A JPS5861650A JP S5861650 A JPS5861650 A JP S5861650A JP 16132881 A JP16132881 A JP 16132881A JP 16132881 A JP16132881 A JP 16132881A JP S5861650 A JPS5861650 A JP S5861650A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- semiconductor device
- static electricity
- layer
- metal film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 230000003068 static effect Effects 0.000 abstract description 9
- 230000005611 electricity Effects 0.000 abstract description 8
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16132881A JPS5861650A (ja) | 1981-10-09 | 1981-10-09 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16132881A JPS5861650A (ja) | 1981-10-09 | 1981-10-09 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5861650A true JPS5861650A (ja) | 1983-04-12 |
JPS647499B2 JPS647499B2 (enrdf_load_stackoverflow) | 1989-02-09 |
Family
ID=15732992
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16132881A Granted JPS5861650A (ja) | 1981-10-09 | 1981-10-09 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5861650A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01175096U (enrdf_load_stackoverflow) * | 1988-05-30 | 1989-12-13 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4910685A (enrdf_load_stackoverflow) * | 1972-05-24 | 1974-01-30 | ||
JPS5066187A (enrdf_load_stackoverflow) * | 1973-10-12 | 1975-06-04 |
-
1981
- 1981-10-09 JP JP16132881A patent/JPS5861650A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4910685A (enrdf_load_stackoverflow) * | 1972-05-24 | 1974-01-30 | ||
JPS5066187A (enrdf_load_stackoverflow) * | 1973-10-12 | 1975-06-04 |
Also Published As
Publication number | Publication date |
---|---|
JPS647499B2 (enrdf_load_stackoverflow) | 1989-02-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH0236071B2 (enrdf_load_stackoverflow) | ||
JPH0476215B2 (enrdf_load_stackoverflow) | ||
US5786613A (en) | Integrated overvoltage protection device having electrodes separated by a gas-filled cavity | |
EP0253105A1 (en) | Integrated circuit with improved protective device | |
US20040021998A1 (en) | Electrostatic discharge protection device comprising several thyristors | |
JP3549916B2 (ja) | 過電圧保護回路 | |
EP0109070B1 (en) | Mos type semiconductor device | |
KR910000229B1 (ko) | 보호장치를 구비하고 있는 반도체집적회로와 그 제조방법 | |
JPS5861650A (ja) | 半導体装置 | |
EP0087155B1 (en) | Means for preventing the breakdown of an insulation layer in semiconductor devices | |
JPH0228266B2 (enrdf_load_stackoverflow) | ||
EP0198468A2 (en) | Protective device for integrated circuit | |
JPH0821630B2 (ja) | 半導体装置 | |
JP2776569B2 (ja) | 半導体装置 | |
KR100449180B1 (ko) | 반도체소자의정전기방지회로용트랜지스터구조 | |
JP2618069B2 (ja) | 半導体レーザ装置 | |
JPS62165362A (ja) | 半導体集積回路装置 | |
JPH07147384A (ja) | 半導体装置 | |
JPH06342904A (ja) | 半導体集積回路装置 | |
JPS62166557A (ja) | 半導体静電破壊保護装置 | |
JP3594725B2 (ja) | 半導体装置の保護回路 | |
JPS63274177A (ja) | 半導体装置の保護回路 | |
JP2585633B2 (ja) | 半導体装置 | |
KR0177394B1 (ko) | 반도체 소자의 입력부 | |
JPH02266572A (ja) | 半導体装置 |