JPS5861628A - 電子ビ−ム露光における近接効果補正方法 - Google Patents

電子ビ−ム露光における近接効果補正方法

Info

Publication number
JPS5861628A
JPS5861628A JP15938081A JP15938081A JPS5861628A JP S5861628 A JPS5861628 A JP S5861628A JP 15938081 A JP15938081 A JP 15938081A JP 15938081 A JP15938081 A JP 15938081A JP S5861628 A JPS5861628 A JP S5861628A
Authority
JP
Japan
Prior art keywords
proximity effect
correction
figures
pattern
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15938081A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6317331B2 (en, 2012
Inventor
Masanori Suzuki
雅則 鈴木
Yutaka Sakakibara
裕 榊原
Kazuhiko Komatsu
一彦 小松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP15938081A priority Critical patent/JPS5861628A/ja
Publication of JPS5861628A publication Critical patent/JPS5861628A/ja
Publication of JPS6317331B2 publication Critical patent/JPS6317331B2/ja
Granted legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
JP15938081A 1981-10-08 1981-10-08 電子ビ−ム露光における近接効果補正方法 Granted JPS5861628A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15938081A JPS5861628A (ja) 1981-10-08 1981-10-08 電子ビ−ム露光における近接効果補正方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15938081A JPS5861628A (ja) 1981-10-08 1981-10-08 電子ビ−ム露光における近接効果補正方法

Publications (2)

Publication Number Publication Date
JPS5861628A true JPS5861628A (ja) 1983-04-12
JPS6317331B2 JPS6317331B2 (en, 2012) 1988-04-13

Family

ID=15692543

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15938081A Granted JPS5861628A (ja) 1981-10-08 1981-10-08 電子ビ−ム露光における近接効果補正方法

Country Status (1)

Country Link
JP (1) JPS5861628A (en, 2012)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4520269A (en) * 1982-11-03 1985-05-28 International Business Machines Corporation Electron beam lithography proximity correction method
US6281513B1 (en) 1998-06-12 2001-08-28 Matsushita Electric Industrial Co., Ltd. Pattern forming method
JP2010128441A (ja) * 2008-12-01 2010-06-10 Toppan Printing Co Ltd フォトマスクのパターンデータ生成方法、フォトマスクのパターンデータ生成装置、およびプログラム
JP2012212792A (ja) * 2011-03-31 2012-11-01 Nuflare Technology Inc 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP2013012578A (ja) * 2011-06-29 2013-01-17 Dainippon Printing Co Ltd 描画データ作成プログラム、描画データ作成装置、描画データ作成方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51148365A (en) * 1975-06-14 1976-12-20 Fujitsu Ltd Electron beam exposure method
JPS5583234A (en) * 1978-12-20 1980-06-23 Sony Corp Electron beam exposure
JPS5648136A (en) * 1979-09-28 1981-05-01 Hitachi Ltd Painting of electron beam
JPS5683030A (en) * 1979-12-12 1981-07-07 Fujitsu Ltd Exposing method of electronic beam

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51148365A (en) * 1975-06-14 1976-12-20 Fujitsu Ltd Electron beam exposure method
JPS5583234A (en) * 1978-12-20 1980-06-23 Sony Corp Electron beam exposure
JPS5648136A (en) * 1979-09-28 1981-05-01 Hitachi Ltd Painting of electron beam
JPS5683030A (en) * 1979-12-12 1981-07-07 Fujitsu Ltd Exposing method of electronic beam

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4520269A (en) * 1982-11-03 1985-05-28 International Business Machines Corporation Electron beam lithography proximity correction method
US6281513B1 (en) 1998-06-12 2001-08-28 Matsushita Electric Industrial Co., Ltd. Pattern forming method
JP2010128441A (ja) * 2008-12-01 2010-06-10 Toppan Printing Co Ltd フォトマスクのパターンデータ生成方法、フォトマスクのパターンデータ生成装置、およびプログラム
JP2012212792A (ja) * 2011-03-31 2012-11-01 Nuflare Technology Inc 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP2013012578A (ja) * 2011-06-29 2013-01-17 Dainippon Printing Co Ltd 描画データ作成プログラム、描画データ作成装置、描画データ作成方法

Also Published As

Publication number Publication date
JPS6317331B2 (en, 2012) 1988-04-13

Similar Documents

Publication Publication Date Title
JP3334441B2 (ja) フォトマスク描画用パターンデータ補正方法と補正装置
JP3331822B2 (ja) マスクパターン補正方法とそれを用いたマスク、露光方法および半導体装置
US6625801B1 (en) Dissection of printed edges from a fabrication layout for correcting proximity effects
US6074787A (en) Method of making mask pattern utilizing auxiliary pattern forbidden region
KR100279034B1 (ko) 전자빔 리소그래피를 위한 선량 수정 근접효과 보상기술
JP2000003028A (ja) マスクパタ―ン補正システムとその補正方法
US6145118A (en) Plotting pattern data production method electron beam plotting method substrate working method and electron beam plotting apparatus
US20150178431A1 (en) Mask pattern generation method
JP4177722B2 (ja) パターン補正方法、パターン補正システム、マスク製造方法、半導体装置製造方法、及びパターン補正プログラム
JPH0262941B2 (en, 2012)
JPS5861628A (ja) 電子ビ−ム露光における近接効果補正方法
JP3543430B2 (ja) マスクパターンの補正方法および補正装置
JP2647000B2 (ja) 電子ビームの露光方法
JP2002313693A (ja) マスクパターンの作成方法
JPH1126360A (ja) マスクパターンの作成方法およびマスクパターン作成装置並びにマスク作成装置
CN104570584B (zh) 一种缺口线端的opc修正方法
US6560767B2 (en) Process for making photomask pattern data and photomask
JP2000100692A (ja) 設計パターン補正方法
TW574631B (en) Electron beam exposure method
JPH11307426A (ja) マスクパターンの補正方法と補正システム、及びこれらを用いた露光用マスクと半導体装置
JPH10189409A (ja) 露光パターンの補正方法、露光パターンの補正装置、露光用マスク、露光方法および半導体装置
JPH09292701A (ja) マスクの製造方法
JP2000100701A (ja) パターンの疎密差評価方法
JPS59172233A (ja) 電子ビ−ム露光方法
JPH06140309A (ja) 電子ビーム露光方法