JPS5857766A - Magneto-resistance element - Google Patents
Magneto-resistance elementInfo
- Publication number
- JPS5857766A JPS5857766A JP56156285A JP15628581A JPS5857766A JP S5857766 A JPS5857766 A JP S5857766A JP 56156285 A JP56156285 A JP 56156285A JP 15628581 A JP15628581 A JP 15628581A JP S5857766 A JPS5857766 A JP S5857766A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- terminal
- film
- lead wire
- terminal portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Hall/Mr Elements (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は端子部の信頼性を向上させた磁気抵抗素子に関
する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetoresistive element whose terminal portion has improved reliability.
磁界の強さを電気抵抗に使換する磁気抵抗素子としては
、ガラス等の絶縁基板上にパーマロイ等の強磁性材の薄
膜を形成し、この薄膜に外部へリード線を引出すための
端子部を設けたものが知られている。この場合、端子部
からリード線を引出す方法としては、ワイヤボンディン
グによるよりもはんだ付けによる方が引張り強ｒ等にお
いて優れているために多く用いられる。As a magnetoresistive element that converts the strength of a magnetic field into electrical resistance, a thin film of ferromagnetic material such as permalloy is formed on an insulating substrate such as glass, and a terminal part for drawing out a lead wire to the outside is attached to this thin film. What has been established is known. In this case, as a method for drawing out the lead wire from the terminal portion, soldering is often used because it is superior to wire bonding in terms of tensile strength and the like.
しかし、はんだ付けする場合には、ガラスとパーマロイ
薄膜の接着強麿が十分でないために、端子部に直接はん
だ付けすると使用中に剥離する事故を起こすことがあっ
た。However, in the case of soldering, the adhesion between the glass and the permalloy thin film is not strong enough, so if the terminals are directly soldered, they may come off during use.
本発明けこのような点ＫＩ！ｌみてなされたもので、そ
の目的とするところけ、素子の信頼性に最も大きく影響
を与える端子部からのリード引出しを改良し、信頼性の
高い磁気抵抗素子を提供することにある。The points of this invention are KI! The purpose of this invention is to provide a highly reliable magnetoresistive element by improving the lead extraction from the terminal portion, which has the greatest effect on the reliability of the element.
このような目的ｔ−達成するために、本発明は、端子部
の強磁性薄膜と絶縁基板の間に基板に対する接着力の強
いクロム薄！！！Ｉを形成したものである。In order to achieve this objective, the present invention provides a chromium thin film with strong adhesion to the substrate between the ferromagnetic thin film of the terminal portion and the insulating substrate. ! ! I was formed.
Ｎ下、本発明を５Ｎ施例により殻明する。The present invention is illustrated by a 5N example.
第１図は本発明に係る磁気抵抗素子の一実施例の斜視図
、第２図は第１図のＡ−Ａ断面図である。FIG. 1 is a perspective view of an embodiment of a magnetoresistive element according to the present invention, and FIG. 2 is a cross-sectional view taken along line AA in FIG.
１けガラスまたはセラミックからなるｅ綴基板、２け絶
縁基板１上に５００〜６００ Ａの厚さにコテ形に形成
したパーマロイ（Ｎｌ ８３係、Ｆ・１７係）からなる
＃膜、２畠は薄Ｍ２のコテ形両端の端子部である。A # film made of permalloy (Nl 83, F 17) formed in a trowel shape with a thickness of 500 to 600 A on a 1-layer insulating substrate 1 made of glass or ceramic, and a 2-layer insulating substrate 1. These are thin M2 iron-shaped terminals at both ends.
端子部２１ ＭにおいてＨ膜２Ｆｉ所定の折抗値を有し
、この抵抗値は薄Ｍ２に磁界が作用すると肇化するよう
になって偽る。In the terminal portion 21M, the H film 2Fi has a predetermined resistance value, and this resistance value becomes distorted and becomes false when a magnetic field acts on the thin film M2.
端子部２ａの部分においては、第２図に示すように、絶
縁基ｌｌ１１上に４００〜５００ Ａの厚さにりｐム（
Ｃｒ）の薄ｊ［３が形成され、この薄１１３上に薄Ｍ２
が形成されて端子部２ａとなっている。薄膜２の形成費
、Ｘｔ保護するために端子部２ａの部分を除いて全面に
約２μの厚さにパッジベージ冒ン膜４が形成される。さ
らＫ、端子部２ａ上にけ２ｏｏｏ１１１２の厚さにパー
マロイの上乗せ膜５が形成される。これは、はんだ付け
する際忙、薄膜２のみでは薄すぎて接着強ｆが十分にと
れ）いえめである。In the terminal portion 2a, as shown in FIG.
A thin layer j[3 of Cr) is formed, and a thin layer M2 is formed on this thin layer 113.
is formed to form the terminal portion 2a. In order to protect the formation cost of the thin film 2, Xt, a padding film 4 having a thickness of about 2 μm is formed on the entire surface except for the terminal portion 2a. Further, a permalloy overlay film 5 is formed on the terminal portion 2a to a thickness of 2ooo1112. This is because the soldering process is busy and the thin film 2 alone is too thin to provide sufficient adhesion strength f).
次に、第３図に示すように、端子部２ａに＋７−ド線６
をけんだ付けすゐ。Ｔは上乗せ膜５に接着されたけんだ
である。Next, as shown in FIG.
I'll put it together. T is a wire bonded to the overlay film 5.
第４図は他の実施例の要部断面図である。第２図と同一
部分には同一符号を付しである。８け上乗せＨ５の上Ｋ
５００〜１０００Ａｌｉ度の厚さに形成された金（Ａ
箇）の薄膜である。このようにするとパ・−マロイが酸
化されてはんだが付きにくくなるという現象を防止でき
る。FIG. 4 is a sectional view of a main part of another embodiment. The same parts as in FIG. 2 are given the same reference numerals. 8 digits additional H5 upper K
Gold (A) formed to a thickness of 500 to 1000 degrees
This is a thin film. By doing so, it is possible to prevent the phenomenon in which permalloy becomes oxidized and becomes difficult to solder.
このように本発明によれば、端子部の接続が確実になさ
れる丸め素子としての信頼性が大幅に向上し、また生産
性もよくなる。信頼性向上の一例として、端子部に接着
したリード線の引張り強ｒを測定し九ところ、クロム薄
膜のない従来のものの約２倍の強度が得られ、また、端
子部の耐湿寿命も従来のものに化して５倍以Ｊが期待で
きる。As described above, according to the present invention, the reliability as a rounding element with which terminal portions can be reliably connected is greatly improved, and productivity is also improved. As an example of improved reliability, we measured the tensile strength r of the lead wire bonded to the terminal and found that it was about twice as strong as a conventional lead wire without a chromium thin film, and the moisture resistance life of the terminal was also shorter than that of the conventional lead wire. You can expect to get 5 times more J if you turn it into something.
第１図は本発明に係る磁気抵抗素子の一実施例の斜視図
、第２図は第１図のＡ−Ａ断面図、第３図はリード１ｌ
ｔｔｆん′だ付けした状態の断面図、第４図Ｆｉ他の実
施例の要部断面図である。
ｌａｍ、ｓ絶縁基板、２．・０．パーマロイ薄膜、２ａ
・・・・端子部、３拳・・・クロム薄膜、４ ｍ
ａ参〇パッシベーショ、ン８５・・一番パーマロイ上乗
せ膜、６囃曝・・リー ド線、Ｔ・・・＃はんだ。
代理人 弁理士 薄 １）利 幸−１造て”ｌｉ内ムFIG. 1 is a perspective view of an embodiment of a magnetoresistive element according to the present invention, FIG. 2 is a sectional view taken along line AA in FIG. 1, and FIG. 3 is a lead 1l.
FIG. 4 is a cross-sectional view of a main part of another embodiment. lam, s insulating substrate, 2.・0. Permalloy thin film, 2a
...Terminal part, 3 fists...Chrome thin film, 4 m
a. Passivation, N85...first permalloy overlay film, 6 exposure...lead wire, T...# solder. Agent Patent Attorney Susuki 1) Yuki Li
Claims (1)
に外部へリード＃を引出すための端子部を設けた磁気抵
抗素子において、前記端子部＃ｉ絶縁基板上にクロム薄
膜を形成し、このクロム薄膜上に前記強磁性材からなる
薄膜を形成した構造を有する磁気抵抗素子。In a magnetoresistive element in which a thin film made of a ferromagnetic material is formed on an insulating substrate, and a terminal portion for drawing out a lead #i to the outside is provided on this thin film, a chromium thin film is formed on the insulating substrate at the terminal portion #i, A magnetoresistive element having a structure in which a thin film made of the ferromagnetic material is formed on the chromium thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56156285A JPS5857766A (en) | 1981-10-02 | 1981-10-02 | Magneto-resistance element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56156285A JPS5857766A (en) | 1981-10-02 | 1981-10-02 | Magneto-resistance element |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61228121A Division JPS62115789A (en) | 1986-09-29 | 1986-09-29 | Magnetoresistance effect element |
| JP61228122A Division JPS62115790A (en) | 1986-09-29 | 1986-09-29 | Magnetoresistance effect element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5857766A true JPS5857766A (en) | 1983-04-06 |
Family
ID=15624468
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56156285A Pending JPS5857766A (en) | 1981-10-02 | 1981-10-02 | Magneto-resistance element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5857766A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61205164U (en) * | 1985-06-12 | 1986-12-24 | ||
| WO1992020637A1 (en) * | 1991-05-23 | 1992-11-26 | Asahi Kasei Kogyo Kabushiki Kaisha | Ceramic board having glaze, manufacturing method therefor, and electronic device using the ceramic board |
-
1981
- 1981-10-02 JP JP56156285A patent/JPS5857766A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61205164U (en) * | 1985-06-12 | 1986-12-24 | ||
| WO1992020637A1 (en) * | 1991-05-23 | 1992-11-26 | Asahi Kasei Kogyo Kabushiki Kaisha | Ceramic board having glaze, manufacturing method therefor, and electronic device using the ceramic board |
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