JPS62232948A - Lead frame - Google Patents
Lead frameInfo
- Publication number
- JPS62232948A JPS62232948A JP7545386A JP7545386A JPS62232948A JP S62232948 A JPS62232948 A JP S62232948A JP 7545386 A JP7545386 A JP 7545386A JP 7545386 A JP7545386 A JP 7545386A JP S62232948 A JPS62232948 A JP S62232948A
- Authority
- JP
- Japan
- Prior art keywords
- lead
- leads
- lead member
- metal
- island
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002184 metal Substances 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 239000002985 plastic film Substances 0.000 claims abstract description 5
- 229920006255 plastic film Polymers 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 abstract description 9
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 239000011889 copper foil Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は特に端子数の多い半導体素子を搭載するのに好
適のリードフレーム構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a lead frame structure particularly suitable for mounting a semiconductor element having a large number of terminals.
（従来の技術）
樹脂モールド型半導体装置は、半導体素子搭載用のアイ
ランド部を有するリードフレームを用い、該アイランド
部に半導体素子を接合し、リード端子と素子上の電極を
ワイヤーボンドした後、素子とワイヤーボンド部を覆う
ように樹脂でモールドして製造される。上記リードフレ
ームは例えば第２図に示すように、中央の半導体素子搭
載用のアイランド部１と該アイランドの周辺に放射状に
伸びる多数のり一ド２及びこれらを支持するフレーム部
３とが一体に形成されたものであり、通常鉄−ニッケル
合金又は銅系の合金の板にフォトエツチング法、又はプ
レス打抜き法を適用することによって得られている。リ
ード間の結合部分４、アイランド部をフレーム部と結合
する部分５及びフレーム部３は樹脂モールド後に切除さ
れる。(Prior Art) A resin molded semiconductor device uses a lead frame having an island portion for mounting a semiconductor element, the semiconductor element is bonded to the island portion, and the lead terminal and the electrode on the element are wire-bonded, and then the element is bonded. It is manufactured by molding resin to cover the wire bond part. For example, as shown in FIG. 2, the lead frame is integrally formed with an island part 1 for mounting a semiconductor element in the center, a large number of glues 2 extending radially around the island, and a frame part 3 supporting them. It is usually obtained by applying a photo-etching method or a press punching method to an iron-nickel alloy or copper-based alloy plate. The connecting portion 4 between the leads, the portion 5 connecting the island portion to the frame portion, and the frame portion 3 are cut out after resin molding.
ところで、近年高密度集積回路で１００個以上の電極を
有するものが設計されるようになり、この素子を搭載す
るリードフレームは電極の数だけのリード数が必要であ
るが、上記のような構造のリードフレームでは１００本
以上のリードを形成することは困難である。例えば１０
龍角のアイランドの各辺に対向してリードを２５本ずつ
配置する場合を考えると、計算上リード内側先端におけ
るリード幅０．２ｍｍ、リード間隔０．２ ａｍとする
ことができるが、このようなリード幅、リード間隔はプ
レス打抜き法では金型の加工上はぼ限度である。By the way, in recent years, high-density integrated circuits with more than 100 electrodes have been designed, and the lead frame on which this element is mounted needs as many leads as the number of electrodes. It is difficult to form more than 100 leads in a lead frame. For example 10
Considering the case where 25 leads are placed facing each side of the dragon horn island, the lead width at the inner tip of the leads can be calculated as 0.2 mm, and the lead spacing is 0.2 am. The lead width and lead spacing are limited by the press punching method in terms of mold processing.
又、エツチング法によるとリード幅は板厚に左右され、
通常のリードフレームに用いられる板厚０．１５〜０．
２５鰭ではリード幅も０．１５〜０．２５鰭が限度であ
る。例えば板厚０．２ｍｍに対してリード幅を０．２酊
に設計すればエツチング後のリード断面は第３図（Ａ）
のようにバランスのとれた形状になるが、リード幅をＱ
、１４ｍにするとリード断面は第３図（Ｂ）に示すよう
に細長くなり、ワイヤーボンディング時にねじれてボン
ディング不良を生じる恐れがあるためこのような形状は
不適当である。この欠点は板厚をリード幅にほぼ等しく
すれば、第３図（Ｃ）に示すように幅と高さのバランス
がとれて解消されるが、このようにすると今度はリード
の強度が小さくなって外部端子をプリント基板等に適用
する際不具合を生じることになる。Also, according to the etching method, the lead width depends on the plate thickness.
The plate thickness used for normal lead frames is 0.15 to 0.
For 25 fins, the lead width is also limited to 0.15 to 0.25 fins. For example, if the lead width is designed to be 0.2mm thick for a board thickness of 0.2mm, the lead cross section after etching will be as shown in Figure 3 (A).
The shape is well-balanced as shown in the figure, but the lead width is Q.
, 14 m, the lead cross section becomes elongated as shown in FIG. 3(B), and such a shape is inappropriate because it may be twisted during wire bonding and cause bonding defects. This drawback can be overcome by making the plate thickness approximately equal to the lead width, as shown in Figure 3 (C), which will balance the width and height, but this will reduce the strength of the lead. This will cause problems when applying the external terminal to a printed circuit board or the like.
本発明は上記事情に鑑みて為されたもので、外部端子の
強度を維持しつつ１００本以上のリードを有するリード
フレームを構成し得る新規な構造のリードフレームを提
供するものである。The present invention has been made in view of the above circumstances, and provides a lead frame with a novel structure that can be configured to have 100 or more leads while maintaining the strength of external terminals.
この目的を達成するため本発明のリードフレームは、外
側から内側中央に向って延びる多数の金属リードが互い
に結合された状態で一体に形成された第１のリード部材
と、絶縁性プラスチックフィルムの一方の面中央部に半
導体素子搭載用の金属アイランド部と該アイランド部の
周辺に外側へ向かって放射状に延びる多数の金属リード
とが形成された第２のリード部材とから成り、第１のリ
ード部材の内側リードと第２のリード部材の外側リード
がそれぞれ重ね合わせて接合されている点に特徴がある
。To achieve this object, the lead frame of the present invention includes a first lead member integrally formed with a plurality of metal leads extending from the outside toward the center of the inside and connected to each other, and one of the insulating plastic films. The second lead member includes a metal island part for mounting a semiconductor element in the center of the surface thereof, and a number of metal leads extending radially outward around the island part. It is characterized in that the inner lead of the second lead member and the outer lead of the second lead member are overlapped and bonded to each other.
第１図は本発明のリードフレームの一例を示す図で、第
１のリード部材１１は、上下左右の四方から中央に向っ
て延びる多数の金属リード１２が、連結部１３及びフレ
ーム部１４によって互いに結合された状態に一体に形成
されている。一方第２のリード部材１５は、絶縁性プラ
スチックフィルム１６の上面中央部に半導体素子搭載用
のアイランド部１７が金属で、又、該アイランド部１７
の周辺に外側へ向って放射状に延びる多数のリード１８
が同じく金属で形成されている。そして第１のリード部
材１１のリード１２の内側部分と、第２のリード部材１
５のリード１８の外側部分がそれぞれ互いに重ね合わせ
て接合されている。FIG. 1 is a diagram showing an example of a lead frame of the present invention, in which a first lead member 11 has a large number of metal leads 12 extending toward the center from all four directions, top, bottom, left, and right, interconnected by a connecting portion 13 and a frame portion 14. integrally formed in a connected state. On the other hand, the second lead member 15 has a metal island portion 17 for mounting a semiconductor element in the center of the upper surface of the insulating plastic film 16, and the island portion 17 is made of metal.
A number of leads 18 extend radially outward around the periphery of the
is also made of metal. Then, the inner part of the lead 12 of the first lead member 11 and the second lead member 1
The outer portions of the leads 18 of No. 5 are overlapped and bonded to each other.
リードフレームをこのような構造にすれば、第１のリー
ド部材１１のリード１２の内側先端をアイランド部の近
傍まで延ばす必要がなくなり、リード幅、リード間隔を
狭めることから解放され、板厚０．１５〜０．２５ｍｍ
の従来のリードフレーム材料を用いることができ、外部
端子の強度を維持することができる。又、第２のリード
部材１５のリード１８の金属材料は、強度を殆ど要しな
いので極めて薄くでき、アイランド部１７の近傍におけ
るリード幅、リード間隔をより小さくすることが可能で
１００本以上のリードを形成することができる。If the lead frame has such a structure, it is no longer necessary to extend the inner tips of the leads 12 of the first lead member 11 to the vicinity of the island portion, and the lead width and lead spacing are freed from narrowing, and the plate thickness can be reduced to 0. 15~0.25mm
conventional lead frame materials can be used and the strength of the external terminals can be maintained. Furthermore, since the metal material of the leads 18 of the second lead member 15 requires almost no strength, it can be made extremely thin, and the lead width and lead spacing in the vicinity of the island portion 17 can be made smaller, allowing for more than 100 leads. can be formed.
このような第２のリード部材１５は、例えばポリイミド
フィルムに銅箔を張り合わせた複合材料にフォトエツチ
ング法を適用することにより得ることができる。この複
合材料はフレキシブルプリント基板材料として種々市販
されており、銅箔の厚さが１５μ程度のものもある。こ
の銅箔の厚さが２０μであるとすればリード幅を２０μ
とするごとができ、リード間隔２０μとすると、ＩＱ＋
ｅｍ角のアイランド部に対して１辺当り２５０本のリー
ドを設けることも原理的には可能である。しかしながら
ワイヤーボンディングするためには冶具の動作の妨げに
ならないようなリード間隔が必要で、又、リード幅もボ
ンディングワイヤーの太さの３倍程度を要するので、リ
ード幅及びリード間隔を上記のように小さくすることは
現実的でなく、このような制約からリード幅、リード間
隔共に５０〜１００μ程度とするのが実際的であろう。Such a second lead member 15 can be obtained, for example, by applying a photoetching method to a composite material made of a polyimide film laminated with copper foil. Various types of this composite material are commercially available as flexible printed circuit board materials, and some have a copper foil thickness of about 15 μm. If the thickness of this copper foil is 20μ, the lead width should be 20μ.
If the lead spacing is 20μ, IQ+
In principle, it is also possible to provide 250 leads per side of an em-square island. However, wire bonding requires a lead spacing that does not interfere with the operation of the jig, and the lead width also requires about three times the thickness of the bonding wire, so the lead width and lead spacing must be adjusted as described above. It is not practical to make the lead width small, and due to such restrictions, it would be practical to set both the lead width and the lead spacing to about 50 to 100 μm.
このようにしても１辺１０朋にリードを５０〜１００本
配置することが可能であり、４辺合計で２００〜４００
本のリード部材を得ることができる。Even in this way, it is possible to arrange 50 to 100 leads on 10 sides, and the total number of leads on 4 sides is 200 to 400.
A book lead member can be obtained.
第１のリード部材１１の内側リードと第２のリード部材
１５の外側リードとの重なり部分は１龍以上あれば良い
。この重なり部分の接合は、溶接法、半田付法などで行
うこともできるが、一方の接合面に金被膜を、他の接合
面に錫被膜を設け、加熱圧接により接合面に金−錫合金
を生成せしめて接合させる合金法が接合強度の信頼性か
ら好ましい方法である。この場合第１のリード部材側に
錫被膜を、第２のリード部材側に金被膜を設けるのが実
際的であり、第１のリード部材には全面に、第２のリー
ド部材には片面全部に被膜を形成すると良い。第１のリ
ード部材の錫被膜は、外部リードをプリント基板等に固
定する際、半田付けを容易にし、第２のリード部材の金
被膜は半導体素子の接合及びワイヤーボンディングを容
易にするからである。錫被膜の厚さは３〜５μ、金被膜
の厚さは１〜３μが適当である。上記加熱圧接は３００
℃以上、好ましくは４００〜４５０℃で、２ ｋｇ以上
の荷重を適用すれば良い。この荷重は大きい程短時間で
接合が完了するので好ましく、１０秒以下で接合できる
２０〜３０ｋｇが推奨される。このような加熱圧接法に
より第１のリード部材と第２のリード部材は充分に接合
され、各リードの引きはがし強度はリード１本当り５０
ｇ以上となる。The overlap between the inner lead of the first lead member 11 and the outer lead of the second lead member 15 may be one or more. This overlapping part can be joined by welding, soldering, etc., but one joint surface is coated with a gold coating and the other joint surface is coated with a tin coating, and a gold-tin alloy is applied to the joint surface by heat pressure welding. The alloy method, which involves forming and bonding, is a preferred method from the viewpoint of reliability in bonding strength. In this case, it is practical to provide a tin coating on the first lead member side and a gold coating on the second lead member side. It is best to form a film on the surface. This is because the tin coating on the first lead member facilitates soldering when fixing the external lead to a printed circuit board, etc., and the gold coating on the second lead member facilitates bonding of semiconductor elements and wire bonding. . The appropriate thickness of the tin coating is 3 to 5 microns, and the thickness of the gold coating is 1 to 3 microns. The above heat pressure welding is 300
℃ or higher, preferably 400 to 450℃, and a load of 2 kg or higher may be applied. The larger the load, the faster the bonding can be completed, and is therefore preferably 20 to 30 kg, which allows bonding to occur in 10 seconds or less. By such a heat pressure welding method, the first lead member and the second lead member are sufficiently joined, and the peel strength of each lead is 50% per lead.
g or more.
本発明により、外部端子の強度を維持したまま１００本
以上のリードを有するリードフレームを実現することが
できた。このリードフレームによれば、半導体装置の組
立に従来の装置がそのまま適用でき、得られる半導体装
置も従来と同様に扱えるので、コスト節減に大きく寄与
できる。According to the present invention, it was possible to realize a lead frame having 100 or more leads while maintaining the strength of the external terminal. According to this lead frame, conventional equipment can be used as is for assembling semiconductor devices, and the resulting semiconductor device can be handled in the same manner as conventional equipment, which can greatly contribute to cost reduction.
第１図は本発明のリードフレームの１例を示す図、第２
図は従来のリードフレームの１例を示す図、第３図はエ
ツチングにより形成されるリードの断面形状を示す図で
ある。
１１・・・第１のリード部材、１５・・・第２のリード
部材、１６・・・絶縁性プラスチックフィルム、１７・
・・アイランド部、１日・・・リード。
特許出願人 住友金属鉱山株式会社
第 １ 図（Ａ）
１！１
ｂ
第 １ 図（Ｂ）
第２図
第３匁Ｃ）
手続補正書印釦
昭和６１年７り／Ｑ日FIG. 1 is a diagram showing one example of the lead frame of the present invention, and FIG.
This figure shows an example of a conventional lead frame, and FIG. 3 shows a cross-sectional shape of a lead formed by etching. DESCRIPTION OF SYMBOLS 11... First lead member, 15... Second lead member, 16... Insulating plastic film, 17...
...Island Club, 1st...Lead. Patent applicant Sumitomo Metal Mining Co., Ltd. Figure 1 (A) 1!1 b Figure 1 (B) Figure 2 3 Momme C) Procedural amendment stamp button Date 7/Q, 1985
Claims (1)
互いに結合された状態で一体に形成された第１のリード
部材と、絶縁性プラスチックフィルムの一方の面中央部
に半導体素子搭載用の金属アイランド部と該アイランド
部の周辺に外側に向って放射状に延びる多数の金属リー
ドとが形成された第２のリード部材とから成り、第１の
リード部材の内側リードと第２のリード部材の外側リー
ドがそれぞれ重ね合わせて接合されていることを特徴と
するリードフレーム。A first lead member that is integrally formed with a large number of metal leads extending from the outside toward the center of the inside and connected to each other, and a metal island for mounting a semiconductor element in the center of one side of the insulating plastic film. and a second lead member formed with a large number of metal leads extending radially outward around the island part, the inner lead of the first lead member and the outer lead of the second lead member. A lead frame characterized by being joined together by overlapping each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7545386A JPS62232948A (en) | 1986-04-03 | 1986-04-03 | Lead frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7545386A JPS62232948A (en) | 1986-04-03 | 1986-04-03 | Lead frame |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62232948A true JPS62232948A (en) | 1987-10-13 |
| JPH0582977B2 JPH0582977B2 (en) | 1993-11-24 |
Family
ID=13576714
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7545386A Granted JPS62232948A (en) | 1986-04-03 | 1986-04-03 | Lead frame |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62232948A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01137661A (en) * | 1987-11-24 | 1989-05-30 | Nec Corp | Lead frame |
| JPH01238151A (en) * | 1988-03-18 | 1989-09-22 | Nec Corp | Lead frame for semiconductor device |
| JPH02278757A (en) * | 1989-04-19 | 1990-11-15 | Nec Corp | Hybrid integrated circuit |
| JPH0389539A (en) * | 1989-08-31 | 1991-04-15 | Mitsui High Tec Inc | Lead frame and semiconductor device using thereof and manufacture of semiconductor device |
| JPH0515448U (en) * | 1991-07-31 | 1993-02-26 | 住友金属工業株式会社 | Ceramic package cage |
| JPH05129507A (en) * | 1991-10-31 | 1993-05-25 | Hitachi Cable Ltd | Composite lead frame |
| JPH05136318A (en) * | 1991-09-09 | 1993-06-01 | Hitachi Cable Ltd | Composite lead frame and its manufacture |
| US5227662A (en) * | 1990-05-24 | 1993-07-13 | Nippon Steel Corporation | Composite lead frame and semiconductor device using the same |
| JPH0878599A (en) * | 1994-09-05 | 1996-03-22 | Goto Seisakusho:Kk | Integrated circuit package and manufacture thereof |
| JP2009231425A (en) * | 2008-03-21 | 2009-10-08 | Toppan Printing Co Ltd | Tape substrate laminated structure and semiconductor device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5090569U (en) * | 1973-12-20 | 1975-07-31 | ||
| JPS52154358A (en) * | 1976-06-18 | 1977-12-22 | Hitachi Ltd | Production of semiconductor device |
| JPS5310269U (en) * | 1976-07-09 | 1978-01-27 | ||
| JPS54118170A (en) * | 1978-02-28 | 1979-09-13 | Amp Inc | Electric connector used to mount electronic device at substrate |
| JPS5521128A (en) * | 1978-08-02 | 1980-02-15 | Hitachi Ltd | Lead frame used for semiconductor device and its assembling |
| JPS5895657U (en) * | 1981-12-23 | 1983-06-29 | 日本電気株式会社 | Lead frame for integrated circuits |
| JPS58122763A (en) * | 1982-01-14 | 1983-07-21 | Toshiba Corp | Resin sealed type semiconductor device |
| JPS5998545A (en) * | 1982-11-26 | 1984-06-06 | Hitachi Ltd | Semiconductor device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5144277A (en) * | 1974-10-15 | 1976-04-15 | Matsushita Electric Works Ltd | CHOONPAPARUSUSUITSUCHINO GODOSABOSHIKAIRO |
-
1986
- 1986-04-03 JP JP7545386A patent/JPS62232948A/en active Granted
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5090569U (en) * | 1973-12-20 | 1975-07-31 | ||
| JPS52154358A (en) * | 1976-06-18 | 1977-12-22 | Hitachi Ltd | Production of semiconductor device |
| JPS5310269U (en) * | 1976-07-09 | 1978-01-27 | ||
| JPS54118170A (en) * | 1978-02-28 | 1979-09-13 | Amp Inc | Electric connector used to mount electronic device at substrate |
| JPS5521128A (en) * | 1978-08-02 | 1980-02-15 | Hitachi Ltd | Lead frame used for semiconductor device and its assembling |
| JPS5895657U (en) * | 1981-12-23 | 1983-06-29 | 日本電気株式会社 | Lead frame for integrated circuits |
| JPS58122763A (en) * | 1982-01-14 | 1983-07-21 | Toshiba Corp | Resin sealed type semiconductor device |
| JPS5998545A (en) * | 1982-11-26 | 1984-06-06 | Hitachi Ltd | Semiconductor device |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01137661A (en) * | 1987-11-24 | 1989-05-30 | Nec Corp | Lead frame |
| JPH01238151A (en) * | 1988-03-18 | 1989-09-22 | Nec Corp | Lead frame for semiconductor device |
| JPH02278757A (en) * | 1989-04-19 | 1990-11-15 | Nec Corp | Hybrid integrated circuit |
| JPH0389539A (en) * | 1989-08-31 | 1991-04-15 | Mitsui High Tec Inc | Lead frame and semiconductor device using thereof and manufacture of semiconductor device |
| US5227662A (en) * | 1990-05-24 | 1993-07-13 | Nippon Steel Corporation | Composite lead frame and semiconductor device using the same |
| JPH0515448U (en) * | 1991-07-31 | 1993-02-26 | 住友金属工業株式会社 | Ceramic package cage |
| JPH05136318A (en) * | 1991-09-09 | 1993-06-01 | Hitachi Cable Ltd | Composite lead frame and its manufacture |
| JPH05129507A (en) * | 1991-10-31 | 1993-05-25 | Hitachi Cable Ltd | Composite lead frame |
| JPH0878599A (en) * | 1994-09-05 | 1996-03-22 | Goto Seisakusho:Kk | Integrated circuit package and manufacture thereof |
| JP2009231425A (en) * | 2008-03-21 | 2009-10-08 | Toppan Printing Co Ltd | Tape substrate laminated structure and semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0582977B2 (en) | 1993-11-24 |
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