JPS5857759A - 受光素子のガ−ドリング形成方法 - Google Patents

受光素子のガ−ドリング形成方法

Info

Publication number
JPS5857759A
JPS5857759A JP56154761A JP15476181A JPS5857759A JP S5857759 A JPS5857759 A JP S5857759A JP 56154761 A JP56154761 A JP 56154761A JP 15476181 A JP15476181 A JP 15476181A JP S5857759 A JPS5857759 A JP S5857759A
Authority
JP
Japan
Prior art keywords
inp
junction
guard ring
implantation
amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56154761A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6244870B2 (OSRAM
Inventor
Haruo Kawada
春雄 川田
Yasuo Baba
馬場　靖男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56154761A priority Critical patent/JPS5857759A/ja
Publication of JPS5857759A publication Critical patent/JPS5857759A/ja
Publication of JPS6244870B2 publication Critical patent/JPS6244870B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials

Landscapes

  • Light Receiving Elements (AREA)
JP56154761A 1981-10-01 1981-10-01 受光素子のガ−ドリング形成方法 Granted JPS5857759A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56154761A JPS5857759A (ja) 1981-10-01 1981-10-01 受光素子のガ−ドリング形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56154761A JPS5857759A (ja) 1981-10-01 1981-10-01 受光素子のガ−ドリング形成方法

Publications (2)

Publication Number Publication Date
JPS5857759A true JPS5857759A (ja) 1983-04-06
JPS6244870B2 JPS6244870B2 (OSRAM) 1987-09-22

Family

ID=15591310

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56154761A Granted JPS5857759A (ja) 1981-10-01 1981-10-01 受光素子のガ−ドリング形成方法

Country Status (1)

Country Link
JP (1) JPS5857759A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003003476A3 (en) * 2001-06-28 2003-12-24 Nat Microelectronic Res Ct Microelectronic device and method of its manufacture

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003003476A3 (en) * 2001-06-28 2003-12-24 Nat Microelectronic Res Ct Microelectronic device and method of its manufacture

Also Published As

Publication number Publication date
JPS6244870B2 (OSRAM) 1987-09-22

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