JPS5850780A - 電界効果トランジスタ - Google Patents
電界効果トランジスタInfo
- Publication number
- JPS5850780A JPS5850780A JP56149170A JP14917081A JPS5850780A JP S5850780 A JPS5850780 A JP S5850780A JP 56149170 A JP56149170 A JP 56149170A JP 14917081 A JP14917081 A JP 14917081A JP S5850780 A JPS5850780 A JP S5850780A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- gate
- source
- gate electrode
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
- H10D30/873—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having multiple gate electrodes
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56149170A JPS5850780A (ja) | 1981-09-21 | 1981-09-21 | 電界効果トランジスタ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56149170A JPS5850780A (ja) | 1981-09-21 | 1981-09-21 | 電界効果トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5850780A true JPS5850780A (ja) | 1983-03-25 |
JPH0212016B2 JPH0212016B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1990-03-16 |
Family
ID=15469324
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56149170A Granted JPS5850780A (ja) | 1981-09-21 | 1981-09-21 | 電界効果トランジスタ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5850780A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5972773A (ja) * | 1982-10-20 | 1984-04-24 | Matsushita Electric Ind Co Ltd | 電界効果トランジスタ |
JPS6349017A (ja) * | 1986-08-19 | 1988-03-01 | 株式会社クボタ | 脱穀機 |
US4972237A (en) * | 1988-06-13 | 1990-11-20 | Fujitsu Limited | Metal-semiconductor field effect transistor device |
-
1981
- 1981-09-21 JP JP56149170A patent/JPS5850780A/ja active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5972773A (ja) * | 1982-10-20 | 1984-04-24 | Matsushita Electric Ind Co Ltd | 電界効果トランジスタ |
JPS6349017A (ja) * | 1986-08-19 | 1988-03-01 | 株式会社クボタ | 脱穀機 |
US4972237A (en) * | 1988-06-13 | 1990-11-20 | Fujitsu Limited | Metal-semiconductor field effect transistor device |
Also Published As
Publication number | Publication date |
---|---|
JPH0212016B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1990-03-16 |