JPH0212016B2 - - Google Patents

Info

Publication number
JPH0212016B2
JPH0212016B2 JP56149170A JP14917081A JPH0212016B2 JP H0212016 B2 JPH0212016 B2 JP H0212016B2 JP 56149170 A JP56149170 A JP 56149170A JP 14917081 A JP14917081 A JP 14917081A JP H0212016 B2 JPH0212016 B2 JP H0212016B2
Authority
JP
Japan
Prior art keywords
gate
electrode
field effect
source
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56149170A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5850780A (ja
Inventor
Kazuhiko Honjo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56149170A priority Critical patent/JPS5850780A/ja
Publication of JPS5850780A publication Critical patent/JPS5850780A/ja
Publication of JPH0212016B2 publication Critical patent/JPH0212016B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/873—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having multiple gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP56149170A 1981-09-21 1981-09-21 電界効果トランジスタ Granted JPS5850780A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56149170A JPS5850780A (ja) 1981-09-21 1981-09-21 電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56149170A JPS5850780A (ja) 1981-09-21 1981-09-21 電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS5850780A JPS5850780A (ja) 1983-03-25
JPH0212016B2 true JPH0212016B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-03-16

Family

ID=15469324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56149170A Granted JPS5850780A (ja) 1981-09-21 1981-09-21 電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS5850780A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5972773A (ja) * 1982-10-20 1984-04-24 Matsushita Electric Ind Co Ltd 電界効果トランジスタ
JPS6349017A (ja) * 1986-08-19 1988-03-01 株式会社クボタ 脱穀機
JPH022179A (ja) * 1988-06-13 1990-01-08 Fujitsu Ltd メタル・セミコンダクタ・ｆｅｔ

Also Published As

Publication number Publication date
JPS5850780A (ja) 1983-03-25

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