JPS58501563A - 列および行消去可能ｅｅｐｒｏｍ - Google Patents

列および行消去可能ｅｅｐｒｏｍ

Info

Publication number
JPS58501563A
JPS58501563A JP57502966A JP50296682A JPS58501563A JP S58501563 A JPS58501563 A JP S58501563A JP 57502966 A JP57502966 A JP 57502966A JP 50296682 A JP50296682 A JP 50296682A JP S58501563 A JPS58501563 A JP S58501563A
Authority
JP
Japan
Prior art keywords
signal
column
row
array
control signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57502966A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0157438B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
クオ，クリントン　シー　ケー
Original Assignee
モトロ−ラ・インコ−ポレ−テツド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by モトロ−ラ・インコ−ポレ−テツド filed Critical モトロ−ラ・インコ−ポレ−テツド
Publication of JPS58501563A publication Critical patent/JPS58501563A/ja
Publication of JPH0157438B2 publication Critical patent/JPH0157438B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups

Landscapes

  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
JP57502966A 1981-09-28 1982-09-17 列および行消去可能ｅｅｐｒｏｍ Granted JPS58501563A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/306,120 US4408306A (en) 1981-09-28 1981-09-28 Column and row erasable EEPROM
US306120 1994-09-14

Publications (2)

Publication Number Publication Date
JPS58501563A true JPS58501563A (ja) 1983-09-16
JPH0157438B2 JPH0157438B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-12-05

Family

ID=23183910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57502966A Granted JPS58501563A (ja) 1981-09-28 1982-09-17 列および行消去可能ｅｅｐｒｏｍ

Country Status (4)

Country Link
US (1) US4408306A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0090005A4 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS58501563A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
WO (1) WO1983001148A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4604616A (en) * 1983-12-01 1986-08-05 The Arthur G. Russell Company, Incorporated Apparatus for programming an electrically erasable programmable read-only memory
US4644494A (en) * 1984-02-06 1987-02-17 Sundstrand Data Control, Inc. Solid state memory for aircraft flight data recorder systems
US4805149A (en) * 1986-08-28 1989-02-14 Advanced Micro Devices, Inc. Digital memory with reset/preset capabilities
US4931997A (en) * 1987-03-16 1990-06-05 Hitachi Ltd. Semiconductor memory having storage buffer to save control data during bulk erase
US5222046A (en) * 1988-02-17 1993-06-22 Intel Corporation Processor controlled command port architecture for flash memory
GB2215156B (en) * 1988-02-17 1991-11-27 Intel Corp Processor controlled command port architecture for flash memory
US4949309A (en) * 1988-05-11 1990-08-14 Catalyst Semiconductor, Inc. EEPROM utilizing single transistor per cell capable of both byte erase and flash erase
US5267210A (en) * 1988-05-18 1993-11-30 Sgs-Thomson Microelectronics, Inc. SRAM with flash clear for selectable I/OS
US5223731A (en) * 1988-06-30 1993-06-29 Goldstar Electron Co., Ltd. EPROM cell using trench isolation to provide leak current immunity
US5029139A (en) * 1989-07-19 1991-07-02 Texas Instruments Incorporated Word erasable buried bit line EEPROM
JP2624864B2 (ja) * 1990-02-28 1997-06-25 株式会社東芝 不揮発性半導体メモリ
FR2659166A1 (fr) * 1990-03-05 1991-09-06 Sgs Thomson Microelectronics Circuit memoire avec element de memorisation de selection de lignes de mot pour un effacement d'un bloc d'informations.
KR940006611B1 (ko) * 1990-08-20 1994-07-23 삼성전자 주식회사 전기적으로 소거 및 프로그램이 가능한 반도체 메모리장치의 자동 소거 최적화회로 및 방법
US5367655A (en) * 1991-12-23 1994-11-22 Motorola, Inc. Memory and associated method including an operating mode for simultaneously selecting multiple rows of cells
US5339279A (en) * 1993-05-07 1994-08-16 Motorola, Inc. Block erasable flash EEPROM apparatus and method thereof
US5650967A (en) * 1995-07-06 1997-07-22 Micron Technology, Inc. Method and apparatus for writing and erasing flash memory
DE69822536T2 (de) * 1997-01-30 2005-01-27 Motorola, Inc., Schaumburg Schaltung und Verfahren zum Verriegeln einer Bitleitung in einem nichtlflüchtigem Speicher
US6101130A (en) * 1999-06-29 2000-08-08 Motorola Inc. Semiconductor device memory cell and method for selectively erasing the same
KR100471532B1 (ko) * 2003-02-14 2005-03-10 엘지전자 주식회사 나노 저장 장치의 헤더
US20090307140A1 (en) * 2008-06-06 2009-12-10 Upendra Mardikar Mobile device over-the-air (ota) registration and point-of-sale (pos) payment
US8862767B2 (en) 2011-09-02 2014-10-14 Ebay Inc. Secure elements broker (SEB) for application communication channel selector optimization

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4172291A (en) * 1978-08-07 1979-10-23 Fairchild Camera And Instrument Corp. Preset circuit for information storage devices
GB2053611A (en) * 1979-07-02 1981-02-04 Mostek Corp Programmable read only memory integrated circuit with bit-check and de-programming modes and methods for programming and testing said circuit
JPS5647992A (en) * 1979-09-27 1981-04-30 Toshiba Corp Nonvolatile semiconductor memory
US4279024A (en) * 1978-06-30 1981-07-14 Siemens Aktiengesellschaft Word-by-word electrically reprogrammable nonvolatile memory

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5622278A (en) * 1979-07-27 1981-03-02 Fujitsu Ltd Decoder selection system

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4279024A (en) * 1978-06-30 1981-07-14 Siemens Aktiengesellschaft Word-by-word electrically reprogrammable nonvolatile memory
US4172291A (en) * 1978-08-07 1979-10-23 Fairchild Camera And Instrument Corp. Preset circuit for information storage devices
GB2053611A (en) * 1979-07-02 1981-02-04 Mostek Corp Programmable read only memory integrated circuit with bit-check and de-programming modes and methods for programming and testing said circuit
JPS5647992A (en) * 1979-09-27 1981-04-30 Toshiba Corp Nonvolatile semiconductor memory

Also Published As

Publication number Publication date
WO1983001148A1 (en) 1983-03-31
JPH0157438B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-12-05
EP0090005A1 (en) 1983-10-05
EP0090005A4 (en) 1985-06-10
US4408306A (en) 1983-10-04

Similar Documents

Publication Publication Date Title
JPS58501563A (ja) 列および行消去可能ｅｅｐｒｏｍ
US5886923A (en) Local row decoder for sector-erase fowler-nordheim tunneling based flash memory
US6628563B1 (en) Flash memory array for multiple simultaneous operations
US5365486A (en) Method and circuitry for refreshing a flash electrically erasable, programmable read only memory
US6563745B1 (en) Memory device and method for dynamic bit inversion
TW416058B (en) Novel flash memory array and decoding architecture
JPH07326199A (ja) メモリ冗長回路のための、ソースによってプログラム可能な不揮発性のプログラム可能な双安定マルチバイブレータ
JPS58501564A (ja) 固定アレ−分割能力を具えたメモリ
US9025381B2 (en) Block-row decoders, memory block-row decoders, memories, methods for deselecting a decoder of a memory and methods of selecting a block of memory
JPS6062000A (ja) 記憶回路
KR960005355B1 (ko) 불휘발성 반도체기억장치 및 이를 이용한 기억시스템
JP2002197883A (ja) 不揮発性半導体メモリ装置
US6950336B2 (en) Method and apparatus for emulating an electrically erasable programmable read only memory (EEPROM) using non-volatile floating gate memory cells
US5661683A (en) On-chip positive and negative high voltage wordline x-decoding for EPROM/FLASH
US4063224A (en) Circuit for the production of read-out pulses
JP2870328B2 (ja) 不揮発性半導体記憶装置
JP3743780B2 (ja) フラッシュメモリ装置のロ―デコ―ダ
CN108701483A (zh) 具有泄漏补偿的存储器电路
JP4467371B2 (ja) 不揮発性半導体記憶装置及び不揮発性半導体記憶装置の置換情報の設定方法
CN101266836B (zh) 或非快闪存储器的字线驱动器
JPS6059599A (ja) 不揮発性半導体メモリ
JPH05258595A (ja) 半導体記憶装置
JPS5942695A (ja) 非揮発性で再プログラミング可能な蓄積セルを備えた集積メモリマトリツクス
JPH03162798A (ja) 不揮発性半導体記憶装置
US6115293A (en) Non-volatile semiconductor memory device