JPS58500681A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58500681A
JPS58500681A JP57501756A JP50175682A JPS58500681A JP S58500681 A JPS58500681 A JP S58500681A JP 57501756 A JP57501756 A JP 57501756A JP 50175682 A JP50175682 A JP 50175682A JP S58500681 A JPS58500681 A JP S58500681A
Authority
JP
Japan
Prior art keywords
disordering
component
introducing
semiconductor region
method described
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57501756A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6351557B2 (enExample
Inventor
ホロニヤツク・ニツク・ジユニア−
ライデイング・ウエイン・デイビス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Illinois at Urbana Champaign
Original Assignee
University of Illinois at Urbana Champaign
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/260,956 external-priority patent/US4378255A/en
Priority claimed from US06/370,756 external-priority patent/US4511408A/en
Application filed by University of Illinois at Urbana Champaign filed Critical University of Illinois at Urbana Champaign
Publication of JPS58500681A publication Critical patent/JPS58500681A/ja
Publication of JPS6351557B2 publication Critical patent/JPS6351557B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/206—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group III-V semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3824—Intermixing, interdiffusion or disordering of III-V heterostructures, e.g. IILD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
JP57501756A 1981-05-06 1982-05-04 半導体装置の製造方法 Granted JPS58500681A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US06/260,956 US4378255A (en) 1981-05-06 1981-05-06 Method for producing integrated semiconductor light emitter
US260956 1982-04-22
US06/370,756 US4511408A (en) 1982-04-22 1982-04-22 Semiconductor device fabrication with disordering elements introduced into active region
US370756 1982-04-22

Publications (2)

Publication Number Publication Date
JPS58500681A true JPS58500681A (ja) 1983-04-28
JPS6351557B2 JPS6351557B2 (enExample) 1988-10-14

Family

ID=26948292

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57501756A Granted JPS58500681A (ja) 1981-05-06 1982-05-04 半導体装置の製造方法

Country Status (4)

Country Link
EP (1) EP0077825B1 (enExample)
JP (1) JPS58500681A (enExample)
DE (1) DE3276979D1 (enExample)
WO (1) WO1982003946A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6079785A (ja) * 1983-10-06 1985-05-07 Agency Of Ind Science & Technol 半導体レ−ザ装置
JPS61236184A (ja) * 1985-04-12 1986-10-21 Agency Of Ind Science & Technol 半導体レ−ザ素子の製造方法
JPH01312871A (ja) * 1988-06-10 1989-12-18 Omron Tateisi Electron Co スリット光用半導体発光ダイオード

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4639275A (en) * 1982-04-22 1987-01-27 The Board Of Trustees Of The University Of Illinois Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor
JPS5929484A (ja) * 1982-08-12 1984-02-16 Fujitsu Ltd 半導体発光装置
JPS59171186A (ja) * 1982-11-12 1984-09-27 Fujitsu Ltd 半導体発光装置
NL8301215A (nl) * 1983-04-07 1984-11-01 Philips Nv Halfgeleiderinrichting voor het opwekken van electromagnetische straling.
JPH0821748B2 (ja) * 1985-09-04 1996-03-04 株式会社日立製作所 半導体レ−ザ装置
JPS62130581A (ja) * 1985-11-30 1987-06-12 Fujitsu Ltd 半導体レーザの製造方法
JPS62173792A (ja) * 1986-01-21 1987-07-30 ゼロツクス　コ−ポレ−シヨン 半導体構造体及びその半導体領域変換方法
US4751194A (en) * 1986-06-27 1988-06-14 American Telephone And Telegraph Company, At&T Bell Laboratories Structures including quantum well wires and boxes
US4865923A (en) * 1986-10-09 1989-09-12 Amoco Corporation Selective intermixing of layered structures composed of thin solid films
US4731338A (en) * 1986-10-09 1988-03-15 Amoco Corporation Method for selective intermixing of layered structures composed of thin solid films
US6590918B1 (en) 1999-11-17 2003-07-08 Matsushita Electronics Corporation Semiconductor laser device and method for producing the same

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3485685A (en) * 1967-05-31 1969-12-23 Bell Telephone Labor Inc Method and source composition for reproducible diffusion of zinc into gallium arsenide
US3868281A (en) * 1968-07-05 1975-02-25 Ibm Luminescent device and method therefor
US3626328A (en) * 1969-04-01 1971-12-07 Ibm Semiconductor bulk oscillator
US4001055A (en) * 1973-05-28 1977-01-04 Charmakadze Revaz A Semiconductor light-emitting diode and method for producing same
FR2288390A1 (fr) * 1974-10-18 1976-05-14 Thomson Csf Procede de realisation d'une structure semi-conductrice pour hyperfrequence et composant electronique ainsi obtenu
US3982207A (en) * 1975-03-07 1976-09-21 Bell Telephone Laboratories, Incorporated Quantum effects in heterostructure lasers
US4138274A (en) * 1976-06-09 1979-02-06 Northern Telecom Limited Method of producing optoelectronic devices with control of light propagation by proton bombardment
US4124826A (en) * 1977-03-01 1978-11-07 Bell Telephone Laboratories, Incorporated Current confinement in semiconductor lasers
US4099999A (en) * 1977-06-13 1978-07-11 Xerox Corporation Method of making etched-striped substrate planar laser
US4199385A (en) * 1977-09-21 1980-04-22 International Business Machines Corporation Method of making an optically isolated monolithic light emitting diode array utilizing epitaxial deposition of graded layers and selective diffusion
US4211586A (en) * 1977-09-21 1980-07-08 International Business Machines Corporation Method of fabricating multicolor light emitting diode array utilizing stepped graded epitaxial layers
US4165474A (en) * 1977-12-27 1979-08-21 Texas Instruments Incorporated Optoelectronic displays using uniformly spaced arrays of semi-sphere light-emitting diodes
US4183038A (en) * 1978-03-29 1980-01-08 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device
US4169727A (en) * 1978-05-01 1979-10-02 Morgan Semiconductor, Inc. Alloy of silicon and gallium arsenide
US4261771A (en) * 1979-10-31 1981-04-14 Bell Telephone Laboratories, Incorporated Method of fabricating periodic monolayer semiconductor structures by molecular beam epitaxy
US4249967A (en) * 1979-12-26 1981-02-10 International Telephone And Telegraph Corporation Method of manufacturing a light-emitting diode by liquid phase epitaxy

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6079785A (ja) * 1983-10-06 1985-05-07 Agency Of Ind Science & Technol 半導体レ−ザ装置
JPS61236184A (ja) * 1985-04-12 1986-10-21 Agency Of Ind Science & Technol 半導体レ−ザ素子の製造方法
JPH01312871A (ja) * 1988-06-10 1989-12-18 Omron Tateisi Electron Co スリット光用半導体発光ダイオード

Also Published As

Publication number Publication date
JPS6351557B2 (enExample) 1988-10-14
DE3276979D1 (en) 1987-09-17
WO1982003946A1 (en) 1982-11-11
EP0077825B1 (en) 1987-08-12
EP0077825A1 (en) 1983-05-04
EP0077825A4 (en) 1984-07-18

Similar Documents

Publication Publication Date Title
US4511408A (en) Semiconductor device fabrication with disordering elements introduced into active region
US4594603A (en) Semiconductor device with disordered active region
US4378255A (en) Method for producing integrated semiconductor light emitter
US4639275A (en) Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor
US5789768A (en) Light emitting diode having transparent conductive oxide formed on the contact layer
JPS58500681A (ja) 半導体装置の製造方法
US20020149030A1 (en) Doped semiconductor material, a method of manufacturing the doped semiconductor material, and a semiconductor device
JPH04226093A (ja) 最上部放射面発光レーザ構造
JPH0381317B2 (enExample)
US4937835A (en) Semiconductor laser device and a method of producing same
JP2686764B2 (ja) 光半導体素子の製造方法
GB2044532A (en) Integrated laser and fet
JP2760596B2 (ja) 導波路構造を有する半導体デバイスおよびその製造方法
CN108767658B (zh) 一种半导体激光器的制作方法、半导体激光器及巴条
EP0358569B1 (fr) Procédé de réalisation d'un laser à semiconducteur à forte puissance d'émission et à grande bande passante à partir d'une structure à ruban enterré du type BRS
CN111262127A (zh) 一种硅基InGaAs激光器衬底的制备方法、衬底和激光器
Lin et al. 1.3 μ m InAs/GaAs quantum-dot lasers grown on planar on-axis Si (001) substrates with high slope-efficiency and low differential resistance
JPS63146482A (ja) 半導体装置
JPS61258487A (ja) 量子井戸レ−ザの製造方法
JPS6243193A (ja) 半導体レ−ザ
JP2697904B2 (ja) 光電デバイスの製造方法
JPH05102611A (ja) 光電子半導体デバイスの製造方法
JPS6179281A (ja) 半導体レ−ザの製造方法
KR940008572B1 (ko) 수소 플라즈마와 도핑이온주입을 이용한 수평전계 반도체 광 스위칭소자의 제조방법
JPS6045082A (ja) 半導体レ−ザ集積回路装置