JPS5843225Y2 - キソウセイチヨウソウチ - Google Patents

キソウセイチヨウソウチ

Info

Publication number
JPS5843225Y2
JPS5843225Y2 JP1975043062U JP4306275U JPS5843225Y2 JP S5843225 Y2 JPS5843225 Y2 JP S5843225Y2 JP 1975043062 U JP1975043062 U JP 1975043062U JP 4306275 U JP4306275 U JP 4306275U JP S5843225 Y2 JPS5843225 Y2 JP S5843225Y2
Authority
JP
Japan
Prior art keywords
gas
semiconductor substrate
pelger
substrate
vapor phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1975043062U
Other languages
English (en)
Japanese (ja)
Other versions
JPS51124353U (OSRAM
Inventor
淳二 佐藤
一雄 飯田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1975043062U priority Critical patent/JPS5843225Y2/ja
Publication of JPS51124353U publication Critical patent/JPS51124353U/ja
Application granted granted Critical
Publication of JPS5843225Y2 publication Critical patent/JPS5843225Y2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP1975043062U 1975-03-31 1975-03-31 キソウセイチヨウソウチ Expired JPS5843225Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1975043062U JPS5843225Y2 (ja) 1975-03-31 1975-03-31 キソウセイチヨウソウチ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1975043062U JPS5843225Y2 (ja) 1975-03-31 1975-03-31 キソウセイチヨウソウチ

Publications (2)

Publication Number Publication Date
JPS51124353U JPS51124353U (OSRAM) 1976-10-07
JPS5843225Y2 true JPS5843225Y2 (ja) 1983-09-30

Family

ID=28173477

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1975043062U Expired JPS5843225Y2 (ja) 1975-03-31 1975-03-31 キソウセイチヨウソウチ

Country Status (1)

Country Link
JP (1) JPS5843225Y2 (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0777197B2 (ja) * 1984-08-24 1995-08-16 富士通株式会社 薄膜成長装置
JPH0539624Y2 (OSRAM) * 1985-01-18 1993-10-07

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4856581A (OSRAM) * 1971-10-27 1973-08-08

Also Published As

Publication number Publication date
JPS51124353U (OSRAM) 1976-10-07

Similar Documents

Publication Publication Date Title
JPS6237527B2 (OSRAM)
KR100474565B1 (ko) 소스 가스 공급 방법 및 장치
JPS5843225Y2 (ja) キソウセイチヨウソウチ
EP0164928A3 (en) Vertical hot wall cvd reactor
US3389022A (en) Method for producing silicon carbide layers on silicon substrates
US5783257A (en) Method for forming doped polysilicon films
JPS5895550A (ja) 非単結晶半導体層形成用装置
JP2654790B2 (ja) 気相成長法
JPH05263255A (ja) プラズマｃｖｄ装置
JPS592374B2 (ja) プラズマ気相成長装置
JPS649614A (en) Method of forming semiconductor film containing amorphous silicon
JPS61234531A (ja) シリコン酸化物の作製方法
KR100226763B1 (ko) 화학기상증착 장치를 이용한 박막 형성방법
JPS6343315A (ja) 減圧ｃｖｄ装置
JPS5824374B2 (ja) 酸化珪素被膜作製方法
JPH1088353A (ja) ＣＶＤ装置を用いたＺｒＮ膜の形成方法
JP2763203B2 (ja) 化学気相成長装置
JPS5840608Y2 (ja) キソウセイチヨウソウチ
JPH0298127A (ja) 半導体薄膜の形成方法
JPS61189629A (ja) 堆積膜形成法
JPH07161646A (ja) 多結晶膜作成方法
JPH0156142B2 (OSRAM)
JPH0397221A (ja) 多結晶シリコン薄膜の作製方法
JPH0823070B2 (ja) 気相成長方法
JPS61189630A (ja) 堆積膜形成法