JPS5841488A - 半導体メモリ装置 - Google Patents
半導体メモリ装置Info
- Publication number
- JPS5841488A JPS5841488A JP56137924A JP13792481A JPS5841488A JP S5841488 A JPS5841488 A JP S5841488A JP 56137924 A JP56137924 A JP 56137924A JP 13792481 A JP13792481 A JP 13792481A JP S5841488 A JPS5841488 A JP S5841488A
- Authority
- JP
- Japan
- Prior art keywords
- data
- mos transistor
- word line
- transistor
- flip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 230000015654 memory Effects 0.000 claims abstract description 22
- 239000003990 capacitor Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000010276 construction Methods 0.000 abstract 1
- 238000013500 data storage Methods 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 14
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 7
- 230000014759 maintenance of location Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56137924A JPS5841488A (ja) | 1981-08-31 | 1981-08-31 | 半導体メモリ装置 |
US06/412,378 US4536859A (en) | 1981-08-31 | 1982-08-27 | Cross-coupled inverters static random access memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56137924A JPS5841488A (ja) | 1981-08-31 | 1981-08-31 | 半導体メモリ装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57098181A Division JPS5839117A (ja) | 1981-08-31 | 1982-06-07 | Mosトランジスタ駆動回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5841488A true JPS5841488A (ja) | 1983-03-10 |
JPS6149758B2 JPS6149758B2 (enrdf_load_stackoverflow) | 1986-10-30 |
Family
ID=15209861
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56137924A Granted JPS5841488A (ja) | 1981-08-31 | 1981-08-31 | 半導体メモリ装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5841488A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62117192A (ja) * | 1985-09-19 | 1987-05-28 | ジリンクス・インコ−ポレイテツド | メモリー回路とメモリーアレイとメモリー回路のデータアクセス方法 |
JPH056675A (ja) * | 1991-06-27 | 1993-01-14 | Nec Corp | スタテイツク型半導体メモリ装置 |
-
1981
- 1981-08-31 JP JP56137924A patent/JPS5841488A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62117192A (ja) * | 1985-09-19 | 1987-05-28 | ジリンクス・インコ−ポレイテツド | メモリー回路とメモリーアレイとメモリー回路のデータアクセス方法 |
JPH056675A (ja) * | 1991-06-27 | 1993-01-14 | Nec Corp | スタテイツク型半導体メモリ装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS6149758B2 (enrdf_load_stackoverflow) | 1986-10-30 |
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