JPS5841488A - 半導体メモリ装置 - Google Patents

半導体メモリ装置

Info

Publication number
JPS5841488A
JPS5841488A JP56137924A JP13792481A JPS5841488A JP S5841488 A JPS5841488 A JP S5841488A JP 56137924 A JP56137924 A JP 56137924A JP 13792481 A JP13792481 A JP 13792481A JP S5841488 A JPS5841488 A JP S5841488A
Authority
JP
Japan
Prior art keywords
data
mos transistor
word line
transistor
flip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56137924A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6149758B2 (enrdf_load_stackoverflow
Inventor
Setsushi Kamuro
節史 禿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP56137924A priority Critical patent/JPS5841488A/ja
Priority to US06/412,378 priority patent/US4536859A/en
Publication of JPS5841488A publication Critical patent/JPS5841488A/ja
Publication of JPS6149758B2 publication Critical patent/JPS6149758B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP56137924A 1981-08-31 1981-08-31 半導体メモリ装置 Granted JPS5841488A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56137924A JPS5841488A (ja) 1981-08-31 1981-08-31 半導体メモリ装置
US06/412,378 US4536859A (en) 1981-08-31 1982-08-27 Cross-coupled inverters static random access memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56137924A JPS5841488A (ja) 1981-08-31 1981-08-31 半導体メモリ装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP57098181A Division JPS5839117A (ja) 1981-08-31 1982-06-07 Ｍｏｓトランジスタ駆動回路

Publications (2)

Publication Number Publication Date
JPS5841488A true JPS5841488A (ja) 1983-03-10
JPS6149758B2 JPS6149758B2 (enrdf_load_stackoverflow) 1986-10-30

Family

ID=15209861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56137924A Granted JPS5841488A (ja) 1981-08-31 1981-08-31 半導体メモリ装置

Country Status (1)

Country Link
JP (1) JPS5841488A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62117192A (ja) * 1985-09-19 1987-05-28 ジリンクス・インコ−ポレイテツド メモリー回路とメモリーアレイとメモリー回路のデータアクセス方法
JPH056675A (ja) * 1991-06-27 1993-01-14 Nec Corp スタテイツク型半導体メモリ装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62117192A (ja) * 1985-09-19 1987-05-28 ジリンクス・インコ−ポレイテツド メモリー回路とメモリーアレイとメモリー回路のデータアクセス方法
JPH056675A (ja) * 1991-06-27 1993-01-14 Nec Corp スタテイツク型半導体メモリ装置

Also Published As

Publication number Publication date
JPS6149758B2 (enrdf_load_stackoverflow) 1986-10-30

Similar Documents

Publication Publication Date Title
JPH0589673A (ja) 半導体メモリー装置におけるワードラインの駆動回路
KR970023375A (ko) 데이터 유지회로
US4536859A (en) Cross-coupled inverters static random access memory
JPS6237468B2 (enrdf_load_stackoverflow)
US3644907A (en) Complementary mosfet memory cell
JPS61117915A (ja) 遅延回路
KR100215734B1 (ko) 반도체 기억장치 및 데이타처리장치
US4467456A (en) Memory circuit
JPS5841488A (ja) 半導体メモリ装置
US6898136B2 (en) Semiconductor memory device, capable of reducing power consumption
JPS58128086A (ja) 半導体記憶装置のデコ−ダ回路
JPS5839117A (ja) Ｍｏｓトランジスタ駆動回路
JPS6052997A (ja) 半導体記憶装置
CN100419907C (zh) 铁电存储装置、电子设备、以及驱动方法
JPS59116985A (ja) 半導体記憶装置
JPS63255897A (ja) 半導体記憶装置
GB2118797A (en) Non-volatile memory circuit
JPH08297972A (ja) ダイナミック形半導体記憶装置
JPH07244987A (ja) 半導体メモリ装置
JPS60239996A (ja) 半導体記憶装置
US20030016563A1 (en) Memory cells incorporating a buffer circuit and memory comprising such a memory cell
JPS6220634B2 (enrdf_load_stackoverflow)
CN117437943A (zh) 一种mram灵敏放大器及其数据读取方法
JPH0237633B2 (enrdf_load_stackoverflow)
JPH11176153A (ja) 半導体集積回路