JPS5841484A - 半導体メモリ回路 - Google Patents

半導体メモリ回路

Info

Publication number
JPS5841484A
JPS5841484A JP56136066A JP13606681A JPS5841484A JP S5841484 A JPS5841484 A JP S5841484A JP 56136066 A JP56136066 A JP 56136066A JP 13606681 A JP13606681 A JP 13606681A JP S5841484 A JPS5841484 A JP S5841484A
Authority
JP
Japan
Prior art keywords
level
pair
semiconductor memory
line
load
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56136066A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6130348B2 (enrdf_load_stackoverflow
Inventor
Keizo Aoyama
青山 慶三
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56136066A priority Critical patent/JPS5841484A/ja
Priority to EP82401606A priority patent/EP0073726B1/en
Priority to DE8282401606T priority patent/DE3277750D1/de
Priority to US06/413,752 priority patent/US4578778A/en
Priority to IE2122/82A priority patent/IE53806B1/en
Publication of JPS5841484A publication Critical patent/JPS5841484A/ja
Publication of JPS6130348B2 publication Critical patent/JPS6130348B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
JP56136066A 1981-09-01 1981-09-01 半導体メモリ回路 Granted JPS5841484A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP56136066A JPS5841484A (ja) 1981-09-01 1981-09-01 半導体メモリ回路
EP82401606A EP0073726B1 (en) 1981-09-01 1982-08-31 Semi-conductor memory circuit
DE8282401606T DE3277750D1 (de) 1981-09-01 1982-08-31 Semi-conductor memory circuit
US06/413,752 US4578778A (en) 1981-09-01 1982-09-01 Semiconductor memory with load controlling feedback means to reduce power consumption
IE2122/82A IE53806B1 (en) 1981-09-01 1982-09-01 Semiconductor memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56136066A JPS5841484A (ja) 1981-09-01 1981-09-01 半導体メモリ回路

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP60255832A Division JPS61113183A (ja) 1985-11-16 1985-11-16 半導体メモリ回路

Publications (2)

Publication Number Publication Date
JPS5841484A true JPS5841484A (ja) 1983-03-10
JPS6130348B2 JPS6130348B2 (enrdf_load_stackoverflow) 1986-07-12

Family

ID=15166408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56136066A Granted JPS5841484A (ja) 1981-09-01 1981-09-01 半導体メモリ回路

Country Status (1)

Country Link
JP (1) JPS5841484A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60151890A (ja) * 1983-08-31 1985-08-09 テキサス インスツルメンツ インコ−ポレイテツド 改良された検出回路を持つsram
JPS62132294A (ja) * 1985-12-04 1987-06-15 Mitsubishi Electric Corp 半導体集積回路装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60151890A (ja) * 1983-08-31 1985-08-09 テキサス インスツルメンツ インコ−ポレイテツド 改良された検出回路を持つsram
JPS62132294A (ja) * 1985-12-04 1987-06-15 Mitsubishi Electric Corp 半導体集積回路装置

Also Published As

Publication number Publication date
JPS6130348B2 (enrdf_load_stackoverflow) 1986-07-12

Similar Documents

Publication Publication Date Title
KR930007279B1 (ko) 더미비트선을 갖춘 반도체 메모리장치
JPH06150648A (ja) カラム選択回路
JPH06162776A (ja) 半導体メモリ回路
US6865115B2 (en) Input stage apparatus and method having a variable reference voltage
US6683475B2 (en) High speed digital signal buffer and method
JPS5755592A (en) Memory device
JPS6362839B2 (enrdf_load_stackoverflow)
JPS5841484A (ja) 半導体メモリ回路
JPS5813519Y2 (ja) 半導体記憶装置
JPH06188391A (ja) メモリ及びメモリ作成方式
JPS58146088A (ja) メモリ回路
JPH07254282A (ja) 並列出力データ経路を有する同期メモリ
JPH01169798A (ja) 半導体記憶装置
JPH0541085A (ja) センスアンプ回路
JPS61233495A (ja) 半導体記憶装置
GB1484941A (en) High density high speed random access memory device
JPH035988A (ja) ダイナミックメモリ
JPS5843120Y2 (ja) Mosトランジスタの集積回路装置
JPS5870491A (ja) 集積回路装置
JPS5841486A (ja) 半導体メモリ回路
JPS61113183A (ja) 半導体メモリ回路
KR920005294B1 (ko) 듀얼포트 메모리 소자의 칩인에이블신호 제어회로
JPH02236898A (ja) 半導体メモリ装置
JPH0620488A (ja) 半導体メモリ
JP2665040B2 (ja) 非同期式メモリ回路