JPS584137A - レジストおよび微細レジストパタ−ンの形成方法 - Google Patents

レジストおよび微細レジストパタ−ンの形成方法

Info

Publication number
JPS584137A
JPS584137A JP56102726A JP10272681A JPS584137A JP S584137 A JPS584137 A JP S584137A JP 56102726 A JP56102726 A JP 56102726A JP 10272681 A JP10272681 A JP 10272681A JP S584137 A JPS584137 A JP S584137A
Authority
JP
Japan
Prior art keywords
resist
solvent
fine
mixed solvent
volume ratio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56102726A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6410059B2 (enExample
Inventor
Takaomi Satokawa
里川　孝臣
Tsuneo Fujii
藤井　恒男
Takayuki Deguchi
出口　隆行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daikin Industries Ltd
Original Assignee
Daikin Industries Ltd
Daikin Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daikin Industries Ltd, Daikin Kogyo Co Ltd filed Critical Daikin Industries Ltd
Priority to JP56102726A priority Critical patent/JPS584137A/ja
Priority to DE8282105737T priority patent/DE3264117D1/de
Priority to EP82105737A priority patent/EP0068488B1/en
Publication of JPS584137A publication Critical patent/JPS584137A/ja
Priority to US06/746,932 priority patent/US4656108A/en
Publication of JPS6410059B2 publication Critical patent/JPS6410059B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24298—Noncircular aperture [e.g., slit, diamond, rectangular, etc.]
    • Y10T428/24306—Diamond or hexagonal

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP56102726A 1981-06-30 1981-06-30 レジストおよび微細レジストパタ−ンの形成方法 Granted JPS584137A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56102726A JPS584137A (ja) 1981-06-30 1981-06-30 レジストおよび微細レジストパタ−ンの形成方法
DE8282105737T DE3264117D1 (en) 1981-06-30 1982-06-28 Resist and process for forming resist pattern
EP82105737A EP0068488B1 (en) 1981-06-30 1982-06-28 Resist and process for forming resist pattern
US06/746,932 US4656108A (en) 1981-06-30 1985-06-20 Patterned film of thiocarbonyl fluoride polymer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56102726A JPS584137A (ja) 1981-06-30 1981-06-30 レジストおよび微細レジストパタ−ンの形成方法

Publications (2)

Publication Number Publication Date
JPS584137A true JPS584137A (ja) 1983-01-11
JPS6410059B2 JPS6410059B2 (enExample) 1989-02-21

Family

ID=14335260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56102726A Granted JPS584137A (ja) 1981-06-30 1981-06-30 レジストおよび微細レジストパタ−ンの形成方法

Country Status (4)

Country Link
US (1) US4656108A (enExample)
EP (1) EP0068488B1 (enExample)
JP (1) JPS584137A (enExample)
DE (1) DE3264117D1 (enExample)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2980695A (en) * 1957-06-12 1961-04-18 Du Pont Polyfluoro-1, 3-dithietanes and their preparation
US3240765A (en) * 1961-05-01 1966-03-15 Du Pont Thiocarbonyl fluorides and their polymers
JPS5290269A (en) * 1976-01-23 1977-07-29 Nippon Telegr & Teleph Corp <Ntt> Forming method for fine resist patterns
US4125671A (en) * 1977-05-06 1978-11-14 Thiokol Corporation Acrylated dithiocarbamyl esters

Also Published As

Publication number Publication date
JPS6410059B2 (enExample) 1989-02-21
US4656108A (en) 1987-04-07
DE3264117D1 (en) 1985-07-18
EP0068488A1 (en) 1983-01-05
EP0068488B1 (en) 1985-06-12

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