JPS5839086A - 半導体レ−ザ装置 - Google Patents

半導体レ−ザ装置

Info

Publication number
JPS5839086A
JPS5839086A JP13733081A JP13733081A JPS5839086A JP S5839086 A JPS5839086 A JP S5839086A JP 13733081 A JP13733081 A JP 13733081A JP 13733081 A JP13733081 A JP 13733081A JP S5839086 A JPS5839086 A JP S5839086A
Authority
JP
Japan
Prior art keywords
semiconductor layer
semiconductor
type
refractive index
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13733081A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6358389B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Yutaka Mihashi
三橋　豊
Shoichi Kakimoto
柿本　昇一
Toshio Sogo
十河　敏雄
Saburo Takamiya
高宮　三郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13733081A priority Critical patent/JPS5839086A/ja
Publication of JPS5839086A publication Critical patent/JPS5839086A/ja
Publication of JPS6358389B2 publication Critical patent/JPS6358389B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Semiconductor Lasers (AREA)
JP13733081A 1981-08-31 1981-08-31 半導体レ−ザ装置 Granted JPS5839086A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13733081A JPS5839086A (ja) 1981-08-31 1981-08-31 半導体レ−ザ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13733081A JPS5839086A (ja) 1981-08-31 1981-08-31 半導体レ−ザ装置

Publications (2)

Publication Number Publication Date
JPS5839086A true JPS5839086A (ja) 1983-03-07
JPS6358389B2 JPS6358389B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-11-15

Family

ID=15196138

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13733081A Granted JPS5839086A (ja) 1981-08-31 1981-08-31 半導体レ−ザ装置

Country Status (1)

Country Link
JP (1) JPS5839086A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS603177A (ja) * 1983-06-21 1985-01-09 Toshiba Corp 半導体レ−ザ装置
JPS60201687A (ja) * 1984-03-27 1985-10-12 Sony Corp 半導体レ−ザ−
JPS63194384A (ja) * 1987-02-09 1988-08-11 Sanyo Electric Co Ltd 半導体レ−ザ装置
JPH06156141A (ja) * 1992-11-20 1994-06-03 Atex Co Ltd 三方向ダンプの切替装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52153686A (en) * 1976-06-16 1977-12-20 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light emitting device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52153686A (en) * 1976-06-16 1977-12-20 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light emitting device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS603177A (ja) * 1983-06-21 1985-01-09 Toshiba Corp 半導体レ−ザ装置
JPS60201687A (ja) * 1984-03-27 1985-10-12 Sony Corp 半導体レ−ザ−
JPS63194384A (ja) * 1987-02-09 1988-08-11 Sanyo Electric Co Ltd 半導体レ−ザ装置
JPH06156141A (ja) * 1992-11-20 1994-06-03 Atex Co Ltd 三方向ダンプの切替装置

Also Published As

Publication number Publication date
JPS6358389B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-11-15

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