JPS5839039A - Resin-sealed semiconductor device - Google Patents

Resin-sealed semiconductor device

Info

Publication number
JPS5839039A
JPS5839039A JP56138965A JP13896581A JPS5839039A JP S5839039 A JPS5839039 A JP S5839039A JP 56138965 A JP56138965 A JP 56138965A JP 13896581 A JP13896581 A JP 13896581A JP S5839039 A JPS5839039 A JP S5839039A
Authority
JP
Japan
Prior art keywords
resin
case
sealed
substrate
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56138965A
Other languages
Japanese (ja)
Inventor
Keiji Itoga
糸賀 計二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56138965A priority Critical patent/JPS5839039A/en
Publication of JPS5839039A publication Critical patent/JPS5839039A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To improve the reliability such as moisture resistance and pressure crack resistance of a resin-sealed semiconductor device by resin-sealing the opening of a case corresponding to the periphery of the side of an element to be sealed in temporarily blocked state and adhering between metallic substrates and resin case, thereby preventing transmission of moisture and gas impurity. CONSTITUTION:Three diode elements 12 and terminal 13 are formed on a common metallic substrate 11, and a hole is formed at the portion corresponding to the periphery of the side of the elements 12 at the resin case 14 so as not to contact directly with the substrate 11, and silicon tape is temporarily bonded to the corresponding part or an exclusive jig is prepared to temporarily block it. Then, thermosetting liquid epoxy resin 16 is filled, a resin cover 11 is covered, the resin is hardened, and the jig is removed, thereby completing the desired product.

Description

【発明の詳細な説明】 この発明は樹脂封止形半導体装fK関する亀のである。[Detailed description of the invention] This invention relates to a resin-sealed semiconductor device fK.

従来例によるこの種の樹脂封止形半導体装置として、ダ
イオード3素子を金属基板にロー付けし、かつケースを
被嵌して樹脂封止したダイオードモジュールの構成を第
1図ないし第3図に示しである。すなわち、これらの各
図において、共通の金属基板(1)には、3個のダイオ
ード素子(りがロー付けされ、かつ各素子(2)からは
それぞれに端子(3)が一様1(a−付けにより取抄出
されている。また樹脂ケース(4)は各素子(2)を包
蔵すると共に、それぞれの端子(3)の一部を上部に突
出した状態で、前記金属基板(1)上に両面接着テープ
あるいはシリコンゴム系接着材(5)Kより接着させる
。さらにこの樹脂ケース(4内に熱硬化性液体エポキシ
樹脂(咎を注入し丸上で、端子台となる樹脂フタ(7)
を前記各端子(3)の上方からケース上に挿入、被嵌さ
せ、その後120〜130℃程度に昇温し、4〜5時間
時間数!して注入樹脂を硬化して完成する。
As a conventional resin-sealed semiconductor device of this type, the structure of a diode module in which three diode elements are soldered to a metal substrate, a case is fitted and resin-sealed is shown in FIGS. 1 to 3. It is. That is, in each of these figures, three diode elements (resistances) are soldered to a common metal substrate (1), and terminals (3) are uniformly connected to each element (2). The resin case (4) encloses each element (2) and is placed on the metal substrate (1) with a part of each terminal (3) protruding upward. Glue it with double-sided adhesive tape or silicone rubber adhesive (5) K.Furthermore, inject thermosetting liquid epoxy resin into the resin case (4) and attach it to the resin lid (7) that will become the terminal block.
is inserted onto the case from above each terminal (3), and then the temperature is raised to about 120 to 130°C for 4 to 5 hours! Then, the injected resin is cured and completed.

とyで前記樹脂ケース(4)内に充填する液体エポキシ
樹脂社シリコンチップおよび金属基板の膨張系数に合わ
せ、かつダイオード素子(2)と金属基板(1)との接
着力を曖善して、外部からの湿気の浸透を防止できるよ
うKその素絆を選択しているのであるが、一方、金属基
板(1)と樹脂ケース(4)とは、組織(重合度)の粗
い両面接着テープあるいけシリコンゴム系接着材(5)
により接着しているために、その接着面は湿気およびガ
ス状の不純物を透過し易い状態となってお秒、これを耐
湿試験すると、符号(atで示すこの接着部は数時間程
度で湿気の透過を許容してしまい、その後は同棲階部か
ら素子ロー付は部までの符号(b)で示す部分の樹脂固
着力でその透過を阻止する。しかし従来はこの阻止力を
発揮する(b)部の寸法が短かいために、耐湿性。
and y to match the expansion coefficient of the liquid epoxy resin silicon chip and the metal substrate filled in the resin case (4), and to ambiguous the adhesive force between the diode element (2) and the metal substrate (1), The K-bond was selected to prevent moisture from penetrating from the outside, but on the other hand, the metal substrate (1) and the resin case (4) were made using double-sided adhesive tape with a rough structure (degree of polymerization). Ike silicone rubber adhesive (5)
Due to the bonding, the bonded surface is easily permeable to moisture and gaseous impurities.When this is tested for moisture resistance, this bonded area, indicated by the symbol (at), is easily permeable to moisture and gaseous impurities within a few hours. Permeation is allowed, and after that, the penetration is blocked by the resin adhesion force of the part shown by the symbol (b) from the coexisting floor part to the element brazing part.However, conventionally, this blocking power is exerted (b) Moisture resistant due to its short dimensions.

耐プレツシヤクツカー性の信頼度に問題があり、かつこ
の信頼性を向上させるのにけ、(b)寸法、ひいては外
形寸法を大きくして対策する必要があったのである。
There was a problem with the reliability of the pressure sagging resistance, and in order to improve this reliability, it was necessary to take measures by increasing the dimensions (b) and, ultimately, the external dimensions.

との発明は従来のこのような実情に鑑み、金属基板と樹
脂ケースとの接着手段を改善して、耐湿性、耐プレッシ
ャー性の信頼度を向上しようとするものである。
In view of the above-mentioned conventional circumstances, the present invention aims to improve the reliability of moisture resistance and pressure resistance by improving the bonding means between the metal substrate and the resin case.

以下、この発明の一実施例につき、第4図ないし第7図
を参照して詳細に説明する。
Hereinafter, one embodiment of the present invention will be described in detail with reference to FIGS. 4 to 7.

この第4図ないし第7図に示す実施例においても、共通
の金属基板(11)に3個のダイオード素子C12】と
、各素子(12)からそれぞれ端子(13)を取り出し
てあり、また樹脂ケースC14)は各素子Cl2)の側
部周辺に該当する部分を開口部(14m)として基板C
11)には直接々触しないようにし、この樹脂ケースC
14)を素子側部周辺以外のこれから遠去かった端部で
、例えばクリップ、ネジなどで位置ずれしない程度に軽
(圧接保持して同様に各素子(12)を色層すると共に
、前記開口部(14m)の該当個所には、シリコンテー
プC15)を仮に貼着するか、あるいけ専用の治具を用
意して仮閉塞する。ついで仁の樹脂ケース(4)内には
前記と同様に熱硬化性液体エポキシ樹脂C1@)を注入
し、かつ端子台となる樹脂7りC17)を施し先止で、
120〜130℃程度に昇温し、4〜5時間寝度放置し
て注入樹脂を硬化させ、この硬化を待ってから前記シリ
コンテープ(15)を引き剥がし、あるいは治具を取り
外して完成する。
In the embodiments shown in FIGS. 4 to 7 as well, three diode elements C12] are provided on a common metal substrate (11), and terminals (13) are taken out from each element (12), and a resin In the case C14), the part corresponding to the side of each element Cl2) is set as an opening (14m) and the substrate C
11) Do not touch the resin case C directly.
14) at the farthest end other than the periphery of the side of the element, use a clip, screw, etc. to hold it lightly (pressed) to the extent that it does not shift, and color-layer each element (12) in the same way, and The corresponding part (14m) is temporarily closed by attaching silicone tape C15) or by preparing a special jig. Next, in the same way as above, thermosetting liquid epoxy resin C1@) was injected into the resin case (4), and resin 7C17), which would become the terminal block, was applied first.
The temperature is raised to about 120-130° C., and the injected resin is left to stand for 4-5 hours to harden. After waiting for this hardening, the silicone tape (15) is peeled off or the jig is removed to complete the process.

そしてこの場合も注入樹脂としては、シリコンチップお
よび金属基板の膨張系数に合わせ、かつロー付けされた
ダイオード素子を保霞すると共に、金属基板(11)と
樹脂ケースC14)とを接着し得る素材を選択するので
あり、この実施例の構成では、少なくと4前記従来例で
の金属基板(1)と樹脂ケース(4)との接着部分該当
の間隔(a)だけ、すなわち(a + b ) ==a
(clだけ接着距離を短長でき、信頼性をe/1倍に向
上し得るのである。
In this case as well, the injection resin should be a material that matches the expansion coefficient of the silicon chip and the metal substrate, protects the soldered diode element, and can bond the metal substrate (11) and the resin case C14). In the configuration of this embodiment, the distance (a) corresponding to the bonded portion between the metal substrate (1) and the resin case (4) in the conventional example is at least 4, that is, (a + b) = =a
(The bonding distance can be shortened by cl, and the reliability can be improved by e/1 times.

なお前記実施例はダイオード素子に適用した場合である
が、その他の半導体素子にも適用できることは勿論であ
る。
Note that although the above embodiment is applied to a diode element, it goes without saying that it can also be applied to other semiconductor elements.

以上詳述したようにこの発明によるときは、被封止素子
の側部周辺に該当するケース部分を開口部とした樹脂ケ
ースを用い、素子を四−付は固定した金属基板上に、こ
の樹脂ケースを素子から遠去かった端部で位置ずれしな
いように保持し、かつ開口部を仮閉塞した状態で樹脂封
止して、この封止樹脂によ抄本来の素子封止保時と共に
金属基板、樹脂ケース間の接着を行なうようにしたから
、素子から外部までの接着距離を格段に短長できて、湿
気およびガス状不純物などの透過を一層効果的に防止し
、耐湿性、耐プレツシヤクツカー性などの信頼性を大巾
に改善し得る4のであり、しかもこのためKl¥jK全
体を大形化し表〈てよく、併せて構成も簡単で容易に実
施できるなどの特長を有する。
As described in detail above, according to the present invention, a resin case is used with the case portion corresponding to the periphery of the side part of the element to be sealed as an opening, and the resin case is placed on a metal substrate to which the element is fixed. The case is held at the end farthest from the element so that it does not shift, and the opening is temporarily closed and sealed with a resin. By adhering between the substrate and the resin case, the adhesion distance from the element to the outside can be significantly shortened, and the penetration of moisture and gaseous impurities is more effectively prevented, resulting in moisture resistance and corrosion resistance. It is possible to greatly improve the reliability such as traction performance4, and for this reason, it is possible to increase the size of the entire Kl\jjK, and it also has features such as being simple in configuration and easy to implement. .

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の樹脂封止形半導体装置を示す斜視図、第
2図および第3図は同上縦断面および拡大横断面図、第
4図はとの発明に係わる樹脂封止形半導体装置の一実施
例を示す斜視図、第5図および第6図は同上縦断面およ
び拡大横断面図、第7図は同上要部の拡大図である。 C11)・・・・金属基板、(12)・・・・ダイオー
ド素子、  (13)・・・・端子、  [14)・・
・・樹脂ケース、  (151・・・・シリコン?−7
’、(161・・・・熱硬化性エポキシ樹脂、(17)
・・・・樹脂フタ。 代理人 葛 野 信 −(外1名) 第1図 [2図 第3図 第4図
FIG. 1 is a perspective view showing a conventional resin-encapsulated semiconductor device, FIGS. 2 and 3 are vertical and enlarged cross-sectional views of the same, and FIG. 4 is a perspective view of a conventional resin-encapsulated semiconductor device. FIG. 5 and FIG. 6 are longitudinal cross-sectional views and enlarged cross-sectional views of the same, and FIG. 7 is an enlarged view of essential parts of the same. C11)...Metal substrate, (12)...Diode element, (13)...Terminal, [14)...
...Resin case, (151...Silicon?-7
', (161...Thermosetting epoxy resin, (17)
...Resin lid. Agent Shin Kuzuno - (1 other person) Figure 1 [Figure 2 Figure 3 Figure 4

Claims (1)

【特許請求の範囲】[Claims] 金属基板に半導体素子と、との半導体素子から取抄出す
端子とを設けると共に、前記基板上に半導体素子を包蔵
するようにして樹脂ケースおよび7タを被嵌させ、ケー
ス内部を樹脂封止する構成において、前記素子O側部周
辺に該当する部分を開口部とした樹脂ケースを用い、仁
の樹脂ケースを前記基板上の素子から遠去かった端部で
圧接保持させ、かつ前記開口部を仮閉塞した状態で樹脂
封止させ、この封止樹脂によ抄素子の封止保霞に併せて
、基板、ケース間を接着したことを特徴とする樹脂封止
形半導体装置。
A semiconductor element and a terminal to be extracted from the semiconductor element are provided on a metal substrate, and a resin case and 7 parts are fitted so as to enclose the semiconductor element on the substrate, and the inside of the case is sealed with resin. In the configuration, a resin case is used that has an opening in a portion corresponding to the side of the element O, the resin case is held in pressure contact with an end far from the element on the substrate, and the opening is closed. 1. A resin-sealed semiconductor device characterized in that the semiconductor device is resin-sealed in a temporarily closed state, and the sealing resin is used to seal and protect the element, and a substrate and a case are bonded together.
JP56138965A 1981-09-02 1981-09-02 Resin-sealed semiconductor device Pending JPS5839039A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56138965A JPS5839039A (en) 1981-09-02 1981-09-02 Resin-sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56138965A JPS5839039A (en) 1981-09-02 1981-09-02 Resin-sealed semiconductor device

Publications (1)

Publication Number Publication Date
JPS5839039A true JPS5839039A (en) 1983-03-07

Family

ID=15234314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56138965A Pending JPS5839039A (en) 1981-09-02 1981-09-02 Resin-sealed semiconductor device

Country Status (1)

Country Link
JP (1) JPS5839039A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01296649A (en) * 1988-05-24 1989-11-30 Mitsubishi Electric Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01296649A (en) * 1988-05-24 1989-11-30 Mitsubishi Electric Corp Semiconductor device

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