JPH01143963A - Manufacture of semiconductor acceleration sensor - Google Patents
Manufacture of semiconductor acceleration sensorInfo
- Publication number
- JPH01143963A JPH01143963A JP30427487A JP30427487A JPH01143963A JP H01143963 A JPH01143963 A JP H01143963A JP 30427487 A JP30427487 A JP 30427487A JP 30427487 A JP30427487 A JP 30427487A JP H01143963 A JPH01143963 A JP H01143963A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- cover
- sensor
- film
- header
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001133 acceleration Effects 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000011521 glass Substances 0.000 claims abstract description 9
- 239000000872 buffer Substances 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000002844 melting Methods 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 239000011347 resin Substances 0.000 claims abstract description 6
- 229920005989 resin Polymers 0.000 claims abstract description 6
- 238000001312 dry etching Methods 0.000 claims abstract description 4
- 230000008018 melting Effects 0.000 claims abstract description 4
- 238000007789 sealing Methods 0.000 claims abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- 239000006172 buffering agent Substances 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 239000000243 solution Substances 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 abstract description 28
- 238000005121 nitriding Methods 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 238000012858 packaging process Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229920002545 silicone oil Polymers 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000004191 hydrophobic interaction chromatography Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は半導体加速度センサーの実装に関するもので、
自動車用の加速度センサーとしてアンチスキッドブレー
キシステム等に利用される。[Detailed Description of the Invention] [Object of the Invention] (Field of Industrial Application) The present invention relates to the implementation of a semiconductor acceleration sensor,
It is used as an acceleration sensor for automobiles in anti-skid brake systems, etc.
（従来の技術）
本発明に係る従来技術としては、特開昭５９−９９３５
６号公報がある。(Prior art) As a prior art related to the present invention, Japanese Patent Application Laid-Open No. 59-9935
There is Publication No. 6.
このものは単一結晶シリコンの圧電抵坑効果を用いたセ
ンサーで第５図に示すように加速度センサーのチップ１
をヘッダー３．カバー２に取り付けた構造で，ヘツダー
とカバーとチップの間にはガラスの粉末を含むエポキシ
化合物４が挟まれている構造である。This sensor uses the piezoresistive effect of single-crystal silicon, and as shown in Figure 5, the acceleration sensor chip 1
Header 3. It has a structure in which it is attached to a cover 2, and an epoxy compound 4 containing glass powder is sandwiched between the header, the cover, and the chip.
（発明が解決しようとする問題点）
しかし前記構造の半導体加速度センサーの実装方法は、
（１１緩衝剤の充填が不完全になり空気が入り易く、緩
衝剤の役目が充分にその目的を達成することができず、
（２）チップをウェハから分割後に実装しているために
組付は工数が大巾に増加している。(Problems to be Solved by the Invention) However, the mounting method of the semiconductor acceleration sensor with the above structure is as follows: (2) Since the chips are mounted after being separated from the wafer, the number of man-hours required for assembly increases significantly.
という問題がある。There is a problem.
本発明は半導体加速度センサーのセンサチップのオーバ
ーロード保護装置として働くヘッダー及びカバーの組付
は工数を削減することを技術的課題とするものである。The technical object of the present invention is to reduce the number of man-hours required for assembling a header and a cover that serve as an overload protection device for a sensor chip of a semiconductor acceleration sensor.
（問題点を解決するための手段）
前記技術的課題を解決するための技術的手段は次のとお
りである。すなわち、半導体よりなるゲージ梁とウェイ
トを有するセンサー部及びカバー。(Means for solving the problem) The technical means for solving the above technical problem are as follows. That is, the sensor part and cover have a gauge beam and a weight made of semiconductor.
ヘッダーよりなる加速度センサーの製造方法に於いて、
＋１１ 窒化ケイ素に被覆されたセンサー部及びカバ
ー及びヘッダーの各ウェハを低融点ガラスにて接着し、
（２）電極取出しのためのパターン成形を行い、シリコ
ンエツチング液により前記エツチング速度の極めて遅い
窒化ケイ素膜までエツチングを行い、
（３）緩衝剤注入用の孔を形成し、
（４） ワイヤボンディングを行うために、カバーウ
ェハ裏面と、センサー部ウェハ表面の窒化ケイ素膜及び
接着用の低融点ガラスをドライエッチにより除去しボン
デイングパツドを露出し、（５） 緩衝剤を注入し密
閉し、
（６） 電極パッドと外部リードとをワイヤボンディ
ング法で結線し、
（７） 樹脂モールを行う、
加速度センサーの製造方法である。+11 In a method for manufacturing an acceleration sensor consisting of a header, the sensor portion coated with silicon nitride, the cover, and the header wafer are bonded using low-melting glass, (2) a pattern is formed for electrode extraction, Etch down to the silicon nitride film, which has an extremely slow etching rate, using a silicon etching solution, (3) form a hole for injecting a buffer, and (4) prepare the back surface of the cover wafer and the surface of the sensor part wafer for wire bonding. The silicon nitride film and the low-melting glass for bonding are removed by dry etching to expose the bonding pad, (5) a buffer is injected and sealed, (6) the electrode pad and external lead are connected using the wire bonding method. (7) A method for manufacturing an acceleration sensor using resin molding.
（作用）
前記技術的手段は次のように作用する。すなわち、セン
サーチップのオーバーロード保護装置として働くヘッダ
ー及びカバーを取り付ける工程を、前記工程の如くダイ
シング工程の前にすることにより通常のウェハと同様に
、ダイシングにより多数個のチップに分割すると同時に
そのままチップになり、通常のＩＣと同様樹脂封止も可
能となり、ＨＩＣ，プリント板へのペアチップも実゛装
可能である。(Operation) The technical means operates as follows. In other words, by attaching the header and cover, which act as overload protection devices for the sensor chip, before the dicing process as in the above process, the chips can be divided into a large number of chips by dicing and at the same time be diced as is, just like a normal wafer. As a result, resin sealing is possible in the same way as normal ICs, and paired chips can be mounted on HICs and printed boards.
（実施例） 以下実施例について説明する。(Example) Examples will be described below.
第１図（イ）〜（チ）は本実施例の製造工程で、■は加
速度センサーを形成したウェハ、２はオーバーロード保
護と緩衝剤を内蔵するためのカバーを形成したウェハ、
３はセンサーの保護とオーバーロード保護の機能を持つ
ヘッダーを形成したウェハで、それぞれのウェハは第１
図（イ）に示すように窒化ケイ素膜８で覆われており、
６はウェイトで、７はゲージ梁である。Figures 1 (a) to (h) show the manufacturing process of this example, where ■ is a wafer on which an acceleration sensor is formed, 2 is a wafer on which a cover for overload protection and a buffer is formed,
3 is a wafer on which a header with sensor protection and overload protection functions is formed, and each wafer is
As shown in Figure (a), it is covered with a silicon nitride film 8,
6 is a weight, and 7 is a gauge beam.
（１１第１図（ロ）に示すように前記各ウェハ１゜２及
び３を低融点ガラス（３００℃〜４００℃）により接着
する。５は接着剤である。(11) As shown in FIG. 1(B), the wafers 1, 2 and 3 are bonded together using low melting point glass (300°C to 400°C). 5 is an adhesive.
（２） 第２図（ハ）に示すようにウェハ２の表面の
窒化ケイ素膜８に電極取り出しのためのエツチング用に
パターンを形成する。(2) As shown in FIG. 2(c), a pattern is formed on the silicon nitride film 8 on the surface of the wafer 2 for etching to take out the electrodes.
（３）第２図（ニ）に示すようにＫＯＨ等のエツチング
液を用いウェハ２のシリコンを表面よりウェハ２の裏面
の窒化ケイ素膜８に達するまでエツチングを行う。(3) As shown in FIG. 2(d), the silicon of the wafer 2 is etched from the front surface until it reaches the silicon nitride film 8 on the back surface of the wafer 2 using an etching solution such as KOH.
（４）第２図（ホ）に示すようにシリコンオイル等の緩
衝剤を注入用の孔を形成するために、カバーウェハの表
面の窒化ケイ素膜８に孔８ａを２ヶ以上形成する。(4) As shown in FIG. 2(e), two or more holes 8a are formed in the silicon nitride film 8 on the surface of the cover wafer in order to form holes for injecting a buffering agent such as silicone oil.
（５）第２図（ハ）に示すようにＫＯＨ等のエツチング
により、シリコン等の緩衝剤を注入孔１０を形成する。(5) As shown in FIG. 2(c), a hole 10 for injecting a buffering agent such as silicon is formed by etching with KOH or the like.
（６）第２図（ト）に示すようにワイヤボンディングを
行うために、カバーウェハ２の裏面の窒化ケイ素膜８．
低融点ガラス５及びセンサー用ウェハの表面の窒化ケイ
素膜８をＣＦ、＋Ｈ２のガスを用いたドライエッチによ
り除去し、ボンデイングパツド１１を露出させる。(6) As shown in FIG. 2(g), silicon nitride film 8. on the back surface of cover wafer 2 is used for wire bonding.
The low melting point glass 5 and the silicon nitride film 8 on the surface of the sensor wafer are removed by dry etching using CF and +H2 gases to expose the bonding pad 11.
（７）第２図（チ）に示すようにシリコンオイル等の緩
衝剤を注入孔１０より注入後、シリコンゴム２等を塗布
することにより孔１０をふさぐ。(7) As shown in FIG. 2 (H), after injecting a buffering agent such as silicone oil through the injection hole 10, the hole 10 is covered by applying silicone rubber 2 or the like.
ベータを行いゴム等を硬化後洗浄を行いオイル等を除去
する。Beta is performed to harden the rubber, etc., and then washed to remove oil, etc.
（８）次に第２図に示すように通常のＩＣ工程と同様に
ダイシングによりセンサーチップ毎に分割し、分割した
チップをリードフレーム■５にグイボンド後、ワイヤボ
ンディングによりチップの電極とリードを接続する。９
はワイヤである。(8) Next, as shown in Figure 2, the sensor chips are divided into sensor chips by dicing in the same way as in the normal IC process, and the divided chips are bonded to the lead frame ■5, and the electrodes and leads of the chips are connected by wire bonding. do. 9
is a wire.
（９）第３図に示すようにトランスファ成形機により樹
脂封止を行い、１３に示すようにパッケージにする。(9) As shown in FIG. 3, resin sealing is performed using a transfer molding machine to form a package as shown in 13.
また他の実施例として第４図に示すようにＨＩＣ基板１
４に、ベアチップで装着したり、プリント基板に装着す
ることも可能であり、１６はリード、１７は配線パター
ン、１８は実装状態のセンサーである。In addition, as another embodiment, as shown in FIG.
4, it can be mounted as a bare chip or on a printed circuit board, 16 is a lead, 17 is a wiring pattern, and 18 is a sensor in a mounted state.
本発明は次のような効果を有する。すなわち、本実施例
は従来技術に比べ、センサーの保護用のカバー，ヘツダ
ーの実装及び緩衝剤の充填をウェハプロセスで行うため
に、−枚のウェハのチップ数の実装工程が１回の実装で
可能となり、又従来技術に比較してＩＣチップと同様に
扱えるために樹脂モールドタイプの実装にもペアチップ
実装にも対応できるものである。The present invention has the following effects. In other words, in this embodiment, compared to the conventional technology, since the protective cover for the sensor, the header, and the filling of the buffer are performed in the wafer process, the number of chips on - wafers can be mounted in one mounting process. In addition, since it can be handled in the same way as an IC chip compared to the conventional technology, it can be used for both resin mold type mounting and pair chip mounting.
第１図（イ）〜（チ）は本実施例の各工程の説明図、第
２図は分割したセンサチップの説明図、第３図はパッケ
ージを行った説明図、第４図は他の実施例の説明図、第
５図は従来例の断面説明図である。
ｌ・・・ウェハ、２・・・カバー。
３・・・ヘッダー、５・・・接着剤。
８・・・窒化ケイ素。Figures 1 (A) to (H) are explanatory diagrams of each process of this example, Figure 2 is an explanatory diagram of the divided sensor chip, Figure 3 is an explanatory diagram of the packaged product, and Figure 4 is an explanatory diagram of the other sensor chips. An explanatory diagram of the embodiment, and FIG. 5 is a cross-sectional explanatory diagram of a conventional example. l...Wafer, 2...Cover. 3...Header, 5...Adhesive. 8...Silicon nitride.
Claims (1)
及びカバー，ヘツダーよりなる加速度センサーの製造方
法に於いて、 （１）前記窒化ケイ素に被覆されたセンサー部，カバー
及びヘツダーの各ウエハを低融点ガラスにて接着し、 （２）電極取出しのためのパターン形成を行い、シリコ
ンエツチング液により前記エツチング速度の極めて遅い
窒化ケイ素膜までエツチングを行い、 （３）緩衝剤注入用の孔を形成し、 （４）ワイヤボンデイングを行うために、カバーウエハ
裏面と、センサー部ウエハ表面の窒化ケイ素膜及び接着
用の低融点ガラスをドライエツチにより除去し、ボンデ
イングパツドを露出し、（５）緩衝剤を注入孔より注入
後、密閉し、（６）電極パツドと外部リードとを、ワイ
ヤボンデイング法で結線し、 （７）樹脂モールドを行う、 加速度センサーの製造方法。[Scope of Claims] In a method for manufacturing an acceleration sensor comprising a sensor section having a gauge beam and a weight made of semiconductor, a cover, and a header, (1) each of the sensor section, cover, and header coated with silicon nitride; The wafer is bonded with low-melting glass, (2) a pattern is formed to take out the electrodes, and the silicon nitride film, which has an extremely slow etching rate, is etched using a silicon etching solution, (3) a hole is created for buffer injection. (4) To perform wire bonding, the silicon nitride film and low melting point glass for bonding on the back surface of the cover wafer and the sensor section wafer surface are removed by dry etching to expose the bonding pad, (5) A method for manufacturing an acceleration sensor, which includes injecting a buffering agent through an injection hole, then sealing it, (6) connecting an electrode pad and an external lead using a wire bonding method, and (7) performing resin molding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30427487A JPH01143963A (en) | 1987-11-30 | 1987-11-30 | Manufacture of semiconductor acceleration sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30427487A JPH01143963A (en) | 1987-11-30 | 1987-11-30 | Manufacture of semiconductor acceleration sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01143963A true JPH01143963A (en) | 1989-06-06 |
Family
ID=17931072
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30427487A Pending JPH01143963A (en) | 1987-11-30 | 1987-11-30 | Manufacture of semiconductor acceleration sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01143963A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006177768A (en) * | 2004-12-22 | 2006-07-06 | Oki Electric Ind Co Ltd | Acceleration sensor and its manufacturing method |
| JP2008534306A (en) * | 2005-04-05 | 2008-08-28 | リテフ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Micromechanical component and method of manufacturing micromechanical component |
| JP2008239042A (en) * | 2007-03-28 | 2008-10-09 | Yokohama Rubber Co Ltd:The | Restroom for aircraft |
| US7568390B2 (en) | 2004-06-18 | 2009-08-04 | Oki Semiconductor Co., Ltd. | Semiconductor acceleration sensor device and method for manufacturing the same |
-
1987
- 1987-11-30 JP JP30427487A patent/JPH01143963A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7568390B2 (en) | 2004-06-18 | 2009-08-04 | Oki Semiconductor Co., Ltd. | Semiconductor acceleration sensor device and method for manufacturing the same |
| US7788976B2 (en) | 2004-06-18 | 2010-09-07 | Oki Semiconductor Co., Ltd. | Semiconductor acceleration sensor device and method for manufacturing the same |
| JP2006177768A (en) * | 2004-12-22 | 2006-07-06 | Oki Electric Ind Co Ltd | Acceleration sensor and its manufacturing method |
| JP4542885B2 (en) * | 2004-12-22 | 2010-09-15 | Ｏｋｉセミコンダクタ株式会社 | Acceleration sensor and manufacturing method thereof |
| JP2008534306A (en) * | 2005-04-05 | 2008-08-28 | リテフ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Micromechanical component and method of manufacturing micromechanical component |
| US7964428B2 (en) | 2005-04-05 | 2011-06-21 | Litef Gmbh | Micromechanical component and method for fabricating a micromechanical component |
| JP2012020397A (en) * | 2005-04-05 | 2012-02-02 | Northrop Grumman Litef Gmbh | Micromechanical component and method for fabricating micromechanical component |
| JP2008239042A (en) * | 2007-03-28 | 2008-10-09 | Yokohama Rubber Co Ltd:The | Restroom for aircraft |
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