JPH0479256A - Semiconductor device with improved moisture resistance and heat radiation and its production - Google Patents
Semiconductor device with improved moisture resistance and heat radiation and its productionInfo
- Publication number
- JPH0479256A JPH0479256A JP2193617A JP19361790A JPH0479256A JP H0479256 A JPH0479256 A JP H0479256A JP 2193617 A JP2193617 A JP 2193617A JP 19361790 A JP19361790 A JP 19361790A JP H0479256 A JPH0479256 A JP H0479256A
- Authority
- JP
- Japan
- Prior art keywords
- moisture
- semiconductor device
- resistant plate
- moisture resistance
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 230000005855 radiation Effects 0.000 title 1
- 229920005989 resin Polymers 0.000 claims abstract description 30
- 239000011347 resin Substances 0.000 claims abstract description 30
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 5
- 239000000956 alloy Substances 0.000 claims abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 5
- 239000010949 copper Substances 0.000 claims abstract description 5
- 229910052802 copper Inorganic materials 0.000 claims abstract description 4
- 229910052742 iron Inorganic materials 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 13
- 238000001721 transfer moulding Methods 0.000 claims description 4
- 238000001746 injection moulding Methods 0.000 claims description 3
- 229920003002 synthetic resin Polymers 0.000 claims description 3
- 239000000057 synthetic resin Substances 0.000 claims description 3
- 238000007789 sealing Methods 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 5
- 229920001187 thermosetting polymer Polymers 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 230000009545 invasion Effects 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 238000000465 moulding Methods 0.000 description 8
- 230000005494 condensation Effects 0.000 description 6
- 238000009833 condensation Methods 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 229920006337 unsaturated polyester resin Polymers 0.000 description 2
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003522 acrylic cement Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- -1 and their oxides Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、半導体装置およびその製造方法に関するもの
であって、より詳しくは、気密封止された半導体パッケ
ージのｒｉ１ｆｆｉ性ないし放熱性を改良した半導体装
置およびその製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a semiconductor device and a method for manufacturing the same. The present invention relates to a semiconductor device and its manufacturing method.
（従来の技術及びその問題点）
ＩＣ，ＬＳＩなどの半導体素子は、周囲の温度や湿度の
変化、あるいは微細なゴミやほこりに影響され、その特
性が微妙に変化してしまうことや、機械的振動や衝撃に
よって破損し易いことなどの理由で半導体素子を封止し
たパッケージとして使用に供されている。(Prior art and its problems) Semiconductor elements such as ICs and LSIs are affected by changes in ambient temperature and humidity, or by minute particles and dust, resulting in subtle changes in their characteristics, and mechanical Because it is easily damaged by vibration or impact, it is used as a package in which semiconductor elements are sealed.
パッケージ方式としては、大別して気密封止方式と樹脂
封止方式とに分けられ、気密封止方式では、−Ｖ的には
セラミックスが用いられているが、熱硬化性樹脂を用い
ることも試みられている。すなわち、箱型樹脂成形体の
中央部に設けられたリードフレームのアイランドに接着
剤によって固着された半導体素子は、インサート成形に
よって樹脂成形体内に封入され、その両端がパッケージ
の内側と外側に開放されたリードフレームとポンディン
グワイヤーによって連結されている。Package methods can be broadly divided into hermetic sealing methods and resin sealing methods.In the hermetic sealing method, ceramics are used for -V, but attempts have also been made to use thermosetting resins. ing. In other words, a semiconductor element is fixed with adhesive to an island of a lead frame provided in the center of a box-shaped resin molded body, and is encapsulated within the resin molded body by insert molding, with both ends open to the inside and outside of the package. It is connected by a lead frame and bonding wire.
また樹脂成形体の上面は透明あるいは不透明な合成樹脂
板、ガラス板などの蓋材を接着剤によって固着し、気密
封止を行うものであるが、このような封止手段を講じて
も、時間の経過に伴ないパッケージ内部に微量の水分が
浸入し、半導体素子の機能を低下せしめ、やがては使用
不能の状態となってしまうという問題点があった。In addition, a lid material such as a transparent or opaque synthetic resin plate or glass plate is fixed to the top surface of the resin molded body using an adhesive to achieve an airtight seal. There is a problem in that a small amount of moisture enters the inside of the package as the process progresses, degrading the functionality of the semiconductor element and eventually rendering it unusable.
そこで、水分の浸入経路として考えられる蓋の接着部、
あるいはリードフレームの封入部について入念な密封手
段を施しても、依然として経時による水分の浸入を防止
することができず、その対策に苦慮しているのが現実で
ある。Therefore, the adhesive part of the lid, which is thought to be a route for moisture to infiltrate,
Alternatively, even if careful sealing means are applied to the enclosing portion of the lead frame, it is still impossible to prevent the infiltration of moisture over time, and the reality is that countermeasures against this cannot be prevented.
本発明者らは、気密封止された半導体パッケージに微量
の水分が浸入する原因を究明するべ（研究を重ねてきた
。そのなかで、半導体パッケージに対する水分の浸入経
路は、当初、蓋材の接着部やリードフレームの封止部か
らのものが想定されたため、その方面からの究明を行う
べく（り返し試験を行ったところ、前記蓋材の接着部や
リードフレームの封止部からの水分の浸入に対しては、
種々の防止策が取られているためさほど問題とはならず
、全く予想外なことに、半導体パッケージに対する水分
の浸入は、パッケージの下面、すなわち、箱型樹脂成形
体の底面から成形体を透過してくる水分が主たる原因で
あるという知見を得、本発明はこの知見をもとにその対
策としで完成されたものである。The inventors of the present invention have conducted repeated research to determine the cause of trace amounts of moisture infiltrating into hermetically sealed semiconductor packages.In the process, the route of moisture ingress into semiconductor packages was initially determined to be through the lid material. Since it was assumed that moisture was coming from the adhesive part or the sealing part of the lead frame, we conducted a repeated test to investigate from that direction. For infiltration of
This is not a big problem because various preventive measures have been taken, but quite unexpectedly, moisture intrusion into the semiconductor package is caused by penetrating the molded body from the bottom surface of the package, that is, the bottom of the box-shaped resin molded body. The present invention was completed based on this knowledge as a countermeasure against this problem.
なお、半導体パッケージに対する水分の浸入は、下記の
方法によって試験した。Note that moisture intrusion into the semiconductor package was tested by the following method.
透明蓋材で封止したパッケージを市販のプレッシャーフ
ッカ−試験機に入れ、温度１２０℃、湿度１００％ＲＨ
、ゲージ圧力１ ｋｇ／ｃｍ”で５時間、加熱加圧後取
り出し、常温下で透明蓋材の内側に浸入水分による結露
ができるかどうかを調べた。The package sealed with a transparent lid material was placed in a commercially available pressure hooker tester at a temperature of 120°C and a humidity of 100% RH.
After being heated and pressurized at a gauge pressure of 1 kg/cm'' for 5 hours, it was taken out and examined to see if condensation could form on the inside of the transparent lid material at room temperature.
結露が認められないものは浸入水分が僅かなものであり
、結露が認められるまで５時間づつの加熱加圧を続けた
。If no dew condensation was observed, only a small amount of moisture had penetrated, and the heating and pressurization was continued for 5 hours at a time until dew condensation was observed.
したがって、本発明において、パッケージの耐湿性の優
劣は、透明蓋材の内側に結露が認められるまでの加熱加
圧時間の長短で判定される。Therefore, in the present invention, the moisture resistance of a package is determined by the length of heating and pressurizing time until dew condensation is observed inside the transparent lid material.
（発明の目的）
そこで、本発明の目的は、水分の浸入を有効に防止した
耐湿性のすぐれた気密封止方式の半導体装置を提供する
ことにある。(Object of the Invention) Therefore, an object of the present invention is to provide a hermetically sealed semiconductor device which effectively prevents moisture from entering and has excellent moisture resistance.
さらに本発明の目的は、耐湿性を改良すると同時に使用
時に発熱する半導体素子からの熱を放熱させ、作動安定
性を保持した半導体装置を提供することにある。A further object of the present invention is to provide a semiconductor device that improves moisture resistance and at the same time radiates heat from a semiconductor element that generates heat during use, thereby maintaining operational stability.
（問題点を解決するための手段）
本発明は、前記目的を達成するために提案されたもので
あって、その特徴とするところは、箱型樹脂成形体の底
面またはそれより内側に耐湿板の層を形成することにあ
り、形成に際しては、耐湿板をリードフレームとともに
金型内に予めセットしてインサート成形することをも製
法上の特徴とするものである。(Means for Solving the Problems) The present invention has been proposed to achieve the above object, and is characterized in that a moisture-resistant plate is provided on the bottom surface or inside of the box-shaped resin molded body. A feature of the manufacturing method is that the moisture-resistant plate is set in advance in a mold together with the lead frame and insert molding is performed.
すなわち、本発明によれば、
気密封止された半導体パッケージの箱型中空樹脂成形体
の底面またはそれより内側に、蒸気不透過性の板状体か
らなる耐湿板の層を形成したことを特徴とするｉ１１湿
性のすぐれた半導体装置が提供される。That is, according to the present invention, a layer of a moisture-resistant plate made of a vapor-impermeable plate is formed on the bottom surface or inside the bottom surface of the box-shaped hollow resin molded body of the hermetically sealed semiconductor package. A semiconductor device with excellent i11 humidity is provided.
また、前記耐湿板として、０．０１ｃａｌ／ｃｍ・ｓｅ
ｃ℃以上の熱伝導率を有するアルミニウム、銅、鉄あね
いはそれらの酸化物またはこれらの合金を使用した場合
には、半導体装置の耐湿性が改良されるばかりでな（、
使用中に発熱する半導体素子の熱を放射させ、作動安定
性を保持した半導体装置が提供される。Moreover, as the moisture-resistant plate, 0.01 cal/cm・se
The use of oxides or alloys of aluminum, copper, and iron alloys, which have thermal conductivities of c°C or more, not only improves the moisture resistance of semiconductor devices (
Provided is a semiconductor device that maintains operational stability by radiating heat from a semiconductor element that generates heat during use.
さらにまた、本発明によれば、
予め金型内の所定の位置に耐湿板とリードフレームをイ
ンサートした後、合成樹脂を射出成形あるいはトランス
ファー成形することによって耐湿板、リードフレームお
よび箱型中空樹脂成形体とを一体化することを特徴とす
る半導体装置の製造方法が提供される。Furthermore, according to the present invention, after inserting the moisture resistant plate and the lead frame into predetermined positions in the mold, the moisture resistant plate, the lead frame, and the box-shaped hollow resin are molded by injection molding or transfer molding of synthetic resin. Provided is a method for manufacturing a semiconductor device characterized by integrating the semiconductor device with the semiconductor device.
（発明の好適な態様の説明）
本発明に係る、底部内面に耐湿板の層を形成した半導体
装置用の箱型樹脂成形体の一例を示す第１図において、
ｌはエポキシ樹脂、ポリイミド樹脂、フェノール樹脂、
不飽和ポリエステル樹脂、シリコーン樹脂などの熱硬化
性樹脂からなる樹脂成形体、２は４２７０イ、銅合金な
どからなるリードフレーム、３は半導体チップを固着す
るためのチップボンデインク部、４は半導体装置を密封
するための蓋接着部であり、密封効果をよりすぐれたも
のとするために段部を設けである。５は耐湿板であり本
発明の技術的特徴である耐湿板を底部内面に形成した状
態を示す。この耐湿板としては、蒸気不透過性の板状体
、とくに、鉄、銅、ニッケル、アルミニウムなどの金属
、合金ならびにそれらの酸化物、セラミック、ガラス等
の材料が使用されるが、これらのなかでも、アルミニウ
ム、銅、鉄の金属、合金あるいはこれらの酸化物からな
る板状体であって、０．０１ｃａｌ／ｃｍ−ｓｅｃ、
”Ｃ以上の熱伝導率を有するものを使用した場合には、
耐湿性が改良されるばかりでなく、半導体チップの発熱
現象をパッケージ外にｔ′ｉ！ｊ、熱するという効果を
併せ持ち、半導体素子の作動安定性をも保持しつるもの
となる。(Description of preferred embodiments of the invention) In FIG. 1 showing an example of a box-shaped resin molded body for a semiconductor device in which a moisture-resistant plate layer is formed on the inner surface of the bottom part according to the present invention,
l is epoxy resin, polyimide resin, phenol resin,
A resin molded body made of thermosetting resin such as unsaturated polyester resin or silicone resin, 2 is a lead frame made of 4270I, copper alloy, etc., 3 is a chip bonding ink portion for fixing a semiconductor chip, and 4 is a semiconductor device. This is the lid adhesive part for sealing the lid, and the stepped part is provided to improve the sealing effect. 5 is a moisture-resistant plate, which is a technical feature of the present invention, and shows a state in which the moisture-resistant plate is formed on the inner surface of the bottom portion. This moisture-resistant plate is made of a vapor-impermeable plate, particularly metals such as iron, copper, nickel, and aluminum, alloys, and their oxides, ceramics, and glass. However, if it is a plate-shaped body made of aluminum, copper, iron metal, alloy, or oxide of these, 0.01 cal/cm-sec,
``When using a material with a thermal conductivity of C or higher,
Not only is the moisture resistance improved, but the heat generation phenomenon of the semiconductor chip is removed from the package! j. It also has the effect of heating and maintains the operational stability of semiconductor devices.
耐湿板の厚みは、通常５０ないし１０００μｍ、好まし
くは１００ないし５００ｕｍのものが用いられるが、そ
の大きさは、箱型樹脂成形体の底面と略同程度の大きさ
のものであることが好ましく、形成する位置としては、
第１図に示す如き箱型樹脂成形体の底面あるいはそれよ
り内側に設けることが好ましいが、ｉｊ′ｌｆｆ１板に
放熱板としての機能をプラスさせようとする場合には、
Ｆｉｌ湿板の位置をもっと半導体素子に近い部分に設け
てもよく、第２図に示すように、さらに半導体チップボ
ンディング部の直下から垂下しｔｒｔ湿板と接続するリ
ード部材を設けてもよい。この場合、リード部材は、０
．０１ｃａｌ／ｃｍ−ｓｅｃ℃以上の熱伝導率をもつ材
料で構成されることが好ましいのは当然のことである。The thickness of the moisture-resistant plate is usually 50 to 1000 μm, preferably 100 to 500 μm, and its size is preferably approximately the same as the bottom of the box-shaped resin molded body. As for the position to form,
It is preferable to provide it on the bottom surface of the box-shaped resin molded body as shown in FIG.
The Fil wet plate may be located closer to the semiconductor element, and as shown in FIG. 2, a lead member may be provided that hangs down from directly below the semiconductor chip bonding portion and connects to the trt wet plate. In this case, the lead member is 0
．． It goes without saying that it is preferable to use a material having a thermal conductivity of 0.01 cal/cm-sec.degree. C. or higher.
第２図は、箱型出願成形体のチップボンディング部に半
導体素子７を固着し、該素子とリードフレーム２をボン
ディングワイヤで連結した後、蓋材８を樹脂成形体の接
着用段部４にエポキシ系、イミド系、あるいはアクリル
系の接着剤で接着せしめ、気密封止された半導体装置を
示す断面図である。ボンディングワイヤーとしては、通
常、金やアルミニウムが使用され、また蓋材としては、
石英ガラス板、サフフイヤ板、透明アルミナ扱、透明プ
ラスチック板などの透明蓋材、着色ガラス板、セラミッ
クス板、着色プラスチック板などの半透明ないし不透明
蓋材が使用される。FIG. 2 shows that after a semiconductor element 7 is fixed to the chip bonding part of a box-shaped application molded body and the element and lead frame 2 are connected with a bonding wire, a lid member 8 is attached to the adhesive step part 4 of the resin molded body. FIG. 2 is a cross-sectional view showing a semiconductor device that is hermetically sealed and bonded with an epoxy, imide, or acrylic adhesive. Gold or aluminum is usually used as the bonding wire, and as the lid material,
Transparent lid materials such as quartz glass plates, sapphire plates, transparent alumina plates, transparent plastic plates, and translucent or opaque lid materials such as colored glass plates, ceramic plates, and colored plastic plates are used.
′導 １置の製造 法
本発明にかかる半導体装置は、リードフレームと耐湿板
を予め金型内の所定の位置にインサートしておき、つい
で、ビスフェノールＡ型、ノボラック型、グリシジルア
ミン型などのエポキシ樹脂、ポリアミノビスマレイミド
、ポリピロメリットイミドなどのポリイミド樹脂、フェ
ノール樹脂、不飽和ポリエステル樹脂、シリコーン樹脂
などの熱硬化性樹脂を射出あるいはトランスファ成形に
よって一体化を行うものである。In the semiconductor device according to the present invention, a lead frame and a moisture-resistant plate are inserted into predetermined positions in a mold, and then an epoxy resin such as bisphenol A type, novolac type, or glycidylamine type is inserted into the mold. Resin, polyimide resin such as polyamino bismaleimide and polypyromellitimide, thermosetting resin such as phenol resin, unsaturated polyester resin, and silicone resin are integrated by injection or transfer molding.
インサート成形の条件は、使用する樹脂によっても異な
るが、エポキシ樹脂の場合を例にとると、通常圧力が１
０ないし５００ ｋｇ／ｃｍ２、温度が１５０ないし２
００℃、時間が１ないし５分の条件での加圧加熱が好ま
しい。Insert molding conditions vary depending on the resin used, but in the case of epoxy resin, the pressure is usually 1.
0 to 500 kg/cm2, temperature 150 to 2
Heating under pressure at 00° C. for 1 to 5 minutes is preferred.
耐湿板をリードフレームと同時にインサート成形するこ
とにより、樹脂成形体の底面またはそれより内側に耐湿
板が高い精度をもって固定され、しかも、あとで耐湿板
を接着する方法に比べて、作業工程が簡略化されるばか
りでなく確実な固着が達成される。By insert-molding the moisture-resistant plate at the same time as the lead frame, the moisture-resistant plate is fixed to the bottom or inside of the resin molding with high precision, and the work process is simpler than the method of gluing the moisture-resistant plate later. Not only is this possible, but also reliable adhesion is achieved.
（発明の効果）
本発明によれば、半導体パッケージの底面あるいはそれ
より内側に蒸気不透過性の耐湿板の層を形成することに
より、半導体パッケージ内への水分透過率の最も多い、
パッケージ底面からの水分の浸入が効率的に防止され、
さらに、この耐湿板をリードフレームと共にインサート
成形することにより、箱型樹脂成形体の内面あるいは外
面に耐湿板が高い精度をもって、しかも簡単な工程で固
定することができる。(Effects of the Invention) According to the present invention, by forming a layer of a vapor-impermeable moisture-resistant plate on the bottom surface of the semiconductor package or inside thereof, the moisture permeation rate into the semiconductor package is maximized.
This effectively prevents moisture from entering from the bottom of the package.
Furthermore, by insert-molding this moisture-resistant plate together with the lead frame, the moisture-resistant plate can be fixed to the inner or outer surface of the box-shaped resin molded body with high precision and in a simple process.
（実施例） 以下実施例により本発明の詳細な説明する。(Example) The present invention will be explained in detail below with reference to Examples.
実施例
４２７０イ製のリードフレームおよび厚さ２５０ＬＬｍ
、熱伝導率０．５３ｃａｌ／ｃｍ・ｓｅｃ、 ℃の銅合
金製耐湿板をトランスファー成形機の金型内の所定の位
置にインサートした。次いでノボラック型エポキシ樹脂
系成形材料を、温度１８０℃、圧力８０ｋｇ／ｃｍ２、
時間２分の条件でインサート成形した後、温度１８０℃
、時間３時間で後硬化を行なって第１図に示すような箱
型中空樹脂成形体を得た。Example 4 Lead frame made of 270mm and thickness 250LLm
, a thermal conductivity of 0.53 cal/cm·sec, and a moisture-resistant plate made of a copper alloy was inserted into a predetermined position in a mold of a transfer molding machine. Next, the novolak type epoxy resin molding material was heated at a temperature of 180°C and a pressure of 80 kg/cm2.
After insert molding for 2 minutes, the temperature was 180℃.
After curing was carried out for 3 hours, a box-shaped hollow resin molded body as shown in FIG. 1 was obtained.
次いで透明ガラス板製蓋を上記箱型中空樹脂成形体の接
着用段部にエポキシ樹脂で接着した。この気密封止され
たパッケージを、温度１２１℃、湿度１００％ＲＨ、ゲ
ージ圧力１ ｋｇ／ｃｍ”の条件でプレッシャーフッカ
−試験にかけ、５時間毎にとり出して常温下でガラス蓋
の内側に結露が認められるかどうかを調べた。Next, a lid made of a transparent glass plate was adhered to the adhesion step part of the box-shaped hollow resin molded body using an epoxy resin. This hermetically sealed package was subjected to a pressure hooker test at a temperature of 121°C, humidity of 100% RH, and gauge pressure of 1 kg/cm, and was taken out every 5 hours to ensure that no dew condensed on the inside of the glass lid at room temperature. I checked to see if it would be approved.
その結果、結露は４５時間まで認められず、５０時間後
にはじめて認められた。一方耐湿板の組込みを実施しな
い以外は全て同様に製作したパッケージは、同様のプレ
ッシャーフッカ−試験で２０時間で結露が認められ、耐
湿板の効果は顕著であった。As a result, dew condensation was not observed until 45 hours, and was only observed after 50 hours. On the other hand, in a package manufactured in the same manner except that the moisture-proof plate was not incorporated, dew condensation was observed in the same pressure hooker test after 20 hours, and the effect of the moisture-proof plate was significant.
【図面の簡単な説明】
第１図、第２図は、本発明の気密封止された半導体パッ
ケージの一例を示す断面図であり、第１図はインサート
成形によって一体化された箱型中空樹脂成形体の断面図
、第２図は、気密封止された半導体パッケージの完成状
態を示す断面図である。
図中、
１−・・熱硬化性樹脂から成る箱型樹脂成形体２・・・
リードフレーム
３・・・半導体チップボンディング部
４−・・密封用の蓋接着部
５・・・耐湿板
６・・・ボンゲインクワイヤー
７・・・半導体チップ
８・・・蓋
９・・・接着部
ｌＯ・・・耐湿板と連結されたリ
上部材
第１図
第２図[Brief Description of the Drawings] Figures 1 and 2 are cross-sectional views showing an example of the hermetically sealed semiconductor package of the present invention, and Figure 1 shows a box-shaped hollow resin package integrated by insert molding. A cross-sectional view of the molded body, FIG. 2 is a cross-sectional view showing the completed state of the hermetically sealed semiconductor package. In the figure, 1-... Box-shaped resin molded body made of thermosetting resin 2...
Lead frame 3... Semiconductor chip bonding part 4 - Sealing lid adhesive part 5... Moisture resistant plate 6... Bonding wire 7... Semiconductor chip 8... Lid 9... Adhesive part lO... Upper member connected to moisture resistant plate Fig. 1 Fig. 2
Claims (3)
成形体の底面またはそれより内側に、蒸気不透過性の板
状体からなる耐湿板の層を形成したことを特徴とする耐
湿性のすぐれた半導体装置。(1) A moisture-resistant device characterized in that a layer of a moisture-resistant plate made of a vapor-impermeable plate is formed on the bottom surface or inside the bottom surface of the box-shaped hollow resin molded body of the hermetically sealed semiconductor package. Excellent semiconductor device.
の熱伝導率を有するアルミニウム、銅、鉄、その酸化物
またはこれらの合金からなる群より選択されたものであ
る請求項（１）記載の半導体装置。(2) Claim (1) wherein the moisture-resistant plate is selected from the group consisting of aluminum, copper, iron, oxides thereof, or alloys thereof having a thermal conductivity of 0.01 cal/cm·sec°C or higher. The semiconductor device described.
ムをインサートした後、合成樹脂を射出成形あるいはト
ランスファー成形することによって耐湿板、リードフレ
ームおよび箱型中空樹脂成形体とを一体化することを特
徴とする半導体装置の製造方法。(3) After inserting the moisture-resistant plate and lead frame into a predetermined position in the mold, the moisture-resistant plate, lead frame, and box-shaped hollow resin molded body are integrated by injection molding or transfer molding of synthetic resin. A method for manufacturing a semiconductor device, characterized in that:
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19361790A JP3080236B2 (en) | 1990-07-21 | 1990-07-21 | Semiconductor device with improved moisture resistance and heat dissipation and method of manufacturing the same |
| AT91112124T ATE186795T1 (en) | 1990-07-21 | 1991-07-19 | ONE PACKAGE SEMICONDUCTOR ARRANGEMENT |
| DE69131784T DE69131784T2 (en) | 1990-07-21 | 1991-07-19 | Semiconductor device with a package |
| EP91112124A EP0468379B1 (en) | 1990-07-21 | 1991-07-19 | Semiconductor device having a package |
| CA002047486A CA2047486C (en) | 1990-07-21 | 1991-07-19 | Semiconductor device and method for manufacturing the same |
| KR1019910012457A KR100250969B1 (en) | 1990-07-21 | 1991-07-20 | Semiconductor device and method of fabricating the same |
| US08/155,539 US5343076A (en) | 1990-07-21 | 1993-11-22 | Semiconductor device with an airtight space formed internally within a hollow package |
| US08/260,977 US6048754A (en) | 1990-07-21 | 1994-06-15 | Method of manufacturing a semiconductor device with an airtight space formed internally within a hollow package |
| KR1019990040354A KR100266348B1 (en) | 1990-07-21 | 1999-09-20 | Semiconductor device and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19361790A JP3080236B2 (en) | 1990-07-21 | 1990-07-21 | Semiconductor device with improved moisture resistance and heat dissipation and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0479256A true JPH0479256A (en) | 1992-03-12 |
| JP3080236B2 JP3080236B2 (en) | 2000-08-21 |
Family
ID=16310921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19361790A Expired - Lifetime JP3080236B2 (en) | 1990-07-21 | 1990-07-21 | Semiconductor device with improved moisture resistance and heat dissipation and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3080236B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5757075A (en) * | 1995-04-26 | 1998-05-26 | Sharp Kabushiki Kaisha | Semiconductor heat sink apparatus |
| KR100298985B1 (en) * | 1997-08-28 | 2001-10-27 | 다니구찌 이찌로오, 기타오카 다카시 | Semiconductor device |
-
1990
- 1990-07-21 JP JP19361790A patent/JP3080236B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5757075A (en) * | 1995-04-26 | 1998-05-26 | Sharp Kabushiki Kaisha | Semiconductor heat sink apparatus |
| KR100298985B1 (en) * | 1997-08-28 | 2001-10-27 | 다니구찌 이찌로오, 기타오카 다카시 | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3080236B2 (en) | 2000-08-21 |
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