JPH0266963A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH0266963A JPH0266963A JP63219491A JP21949188A JPH0266963A JP H0266963 A JPH0266963 A JP H0266963A JP 63219491 A JP63219491 A JP 63219491A JP 21949188 A JP21949188 A JP 21949188A JP H0266963 A JPH0266963 A JP H0266963A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- acid
- package body
- semiconductor device
- inner end
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000002253 acid Substances 0.000 claims abstract description 30
- 238000007789 sealing Methods 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 29
- 239000003638 chemical reducing agent Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 abstract description 23
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052799 carbon Chemical group 0.000 abstract description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 2
- 239000001257 hydrogen Substances 0.000 abstract description 2
- 150000007524 organic acids Chemical class 0.000 abstract description 2
- 235000005985 organic acids Nutrition 0.000 abstract description 2
- 230000006835 compression Effects 0.000 abstract 1
- 238000007906 compression Methods 0.000 abstract 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract 1
- 150000007522 mineralic acids Chemical class 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 description 19
- 239000000463 material Substances 0.000 description 10
- 239000012790 adhesive layer Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 239000000843 powder Substances 0.000 description 7
- 229920003023 plastic Polymers 0.000 description 5
- 230000002411 adverse Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 239000004721 Polyphenylene oxide Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229920006380 polyphenylene oxide Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- -1 OH (R Chemical class 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 229960005070 ascorbic acid Drugs 0.000 description 1
- 235000010323 ascorbic acid Nutrition 0.000 description 1
- 239000011668 ascorbic acid Substances 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229940093915 gynecological organic acid Drugs 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
１旦ユ挟丘立１
本発明は、半導体素子およびそれに接続されるリードフ
レームの少なくとも一部がパッケージ体内に気密に封止
された半導体装置を製造する方法に関し、さらに詳しく
は、リードフレームとパラゲージ体との間の接着性を良
好にし、気密性を向上させることが可能な半導体装置の
製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a semiconductor device in which a semiconductor element and at least a portion of a lead frame connected thereto are hermetically sealed within a package, and further relates to Specifically, the present invention relates to a method of manufacturing a semiconductor device that can improve the adhesiveness between a lead frame and a paragauge body and improve airtightness.
の ｔらびに の 題
ＩＣ，ＬＳＩ等の半導体素子は、周囲の温度変化、湿度
変化およびゴミやほこりの存在によって、その特性がｍ
ｓに変化すると共に、機械的振動や衝撃によって破損し
易いことから、何らかの手段でその外側を被覆密封して
外部の影響を遮断することが要求される。そのために、
半導体素子を封止するための種々のパンケージング方式
が提案されている。Semiconductor devices such as ICs and LSIs have their characteristics deteriorate due to changes in ambient temperature, humidity, and the presence of dirt and dust.
s and is easily damaged by mechanical vibrations and shocks, so it is necessary to cover and seal the outside by some means to block external influences. for that,
Various pancasing methods have been proposed for encapsulating semiconductor devices.
パッケージング方式には、大別して、気密封止方式と樹
脂１．ｆ正方式とがある。気密封止方式では、金属、ガ
ラス、セラミックなどによって外気と遮断された気体の
中に半導体素子が収容され、樹脂封止方式では、半導体
素子やコネクタ部品が樹脂中に埋込まれたパッケージン
グ形式をとっている。Packaging methods can be broadly divided into hermetic sealing methods and resin 1. There is an f-positive method. In the hermetic sealing method, the semiconductor element is housed in a gas sealed off from the outside air by metal, glass, ceramic, etc., and in the resin sealing method, the semiconductor element and connector parts are embedded in resin. is taking.
それぞれの方式には一長一短があり、一般に、気密封止
方式では電子部品の信顆性に優れるが、製造コストが高
くなるという性質を有し、樹脂封止方式ではその逆の性
質を有する。Each method has its advantages and disadvantages, and in general, hermetic sealing methods provide excellent reliability of electronic components, but have the property of increasing manufacturing costs, while resin sealing methods have the opposite property.
そこで最近では、気密封止方式と樹脂封止方式との中間
の性質を有する封止方式が開発されている（特開昭６２
−２１．２５０号公報）、この方式では、樹脂で成形さ
れたパッケージ体に設けられた開口部内に半導体素子を
収容し、この開口部を蓋材で封止することにより、半導
体素子を気密状態に保持している。Therefore, recently, a sealing method with properties intermediate between the hermetic sealing method and the resin sealing method has been developed (Japanese Patent Laid-Open No. 62
In this method, a semiconductor element is housed in an opening provided in a package body molded with resin, and this opening is sealed with a lid material to keep the semiconductor element in an airtight state. It is held in
しかしながら、このような最近開発された封止方式の半
導体装置を含めて、従来の半導体装置を製造する際には
、半導体素子のみならず、それに電気的に接続されるリ
ードフレームの少なくとも一部をもパッケージ体内に密
封する必要があるが、このリードフレームの少なくとも
一部とパッケージ体を構成する成形体あるいは接着剤と
の接着性が悪いと、湿熱条件下でリードフレームとパッ
ケージ体あるいは接着剤との界面からの水の侵入をきた
し、製品の寿命を縮める虞があった。However, when manufacturing conventional semiconductor devices, including semiconductor devices with recently developed sealing methods, not only the semiconductor element but also at least a portion of the lead frame electrically connected to it must be manufactured. However, if the adhesion between at least a portion of the lead frame and the molded body or adhesive that makes up the package is poor, the lead frame and the package or adhesive may bond under humid heat conditions. There was a risk that water would enter from the interface and shorten the life of the product.
１１ユ旦追
本発明は、このような従来技術が有する不都合を解消す
るためになされ、半導体素子およびそれに電気的に接続
されるリードフレームの少なくとも一部をパッケージ体
内に気密に密封するに際し、リードフレームとパッケー
ジ体あるいは接着剤との接着性を良好にし、悪条件下で
もこれらの界面からの水の侵入を防止することが可能で
あり、製品の耐久性を向上させることができる半導体装
置の製造方法を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made in order to eliminate the disadvantages of the prior art. Manufacture of semiconductor devices that improves the durability of the product by improving the adhesion between the frame and the package body or adhesive, preventing water from entering through these interfaces even under adverse conditions. The purpose is to provide a method.
１肌立且叉
このような目的を達成するなめに、本発明に係る半導体
装置の製造方法は、半導体素子と該半導体素子に電気的
に接続されたリードフレームの少なくとも一部とをパッ
ケージ体内に気密に封止してなる半導体装置の製造方法
において、前記リードフレームの少なくとも内側端部を
酸で前処理した後に、半導体水子とリードフレームの少
なくとも一部とをパッケージ体内に封止することを基本
的に特徴としている０本発明でいう内側端部とは、リー
ドフレームとパッケージ体とが接する部分および／また
はリードフレームとパッケージ体とを接合するための接
着剤と接する部分をいう（以下同じ）。1. In order to achieve such objects, the method for manufacturing a semiconductor device according to the present invention includes a semiconductor device and at least a portion of a lead frame electrically connected to the semiconductor device in a package. In the method for manufacturing a semiconductor device that is hermetically sealed, the semiconductor water droplets and at least a portion of the lead frame are sealed in a package body after pre-treating at least an inner end portion of the lead frame with an acid. Basically, the inner end portion as used in the present invention refers to the portion where the lead frame and the package body come into contact and/or the portion where the lead frame and the package body come into contact with an adhesive for joining the package body (hereinafter the same shall apply). ).
このようにリードフレームの少なくとも内側端部を酸で
前処理することで、リードフレームの表面が酸で■面化
され、リードフレームとパッケージ体あるいは接着剤と
の接着性がさらに向上し、悪条件下でも、これらの界面
から水が内部に侵入することがなくなり、製品の耐久性
が向上する。By pre-treating at least the inner end of the lead frame with acid in this way, the surface of the lead frame is coated with acid, which further improves the adhesion between the lead frame and the package body or adhesive, which can be used under adverse conditions. Water will no longer infiltrate into the interior through these interfaces, improving the durability of the product.
Ｉ肚ａ且止司１Ｊ
以下、本発明を図面に示す実施例に基づき詳細に説明す
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below based on embodiments shown in the drawings.
第１図は本発明の一実施例に係る半導体装置の製造方法
を示す要部断面図、第２図は本発明の曲の実施例に係る
半導体装置の製造方法を示す要部断面図である。FIG. 1 is a cross-sectional view of a main part showing a method of manufacturing a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view of a main part showing a method of manufacturing a semiconductor device according to an embodiment of a song of the present invention. .
第１図に示す本発明の一実施例では、まず、たとえば樹
脂で成形されたパッケージ体１を準備する。パッケージ
体１の略中央には、半導体素子２が収容される凹所３が
形成されている。In one embodiment of the present invention shown in FIG. 1, first, a package body 1 made of resin, for example, is prepared. A recess 3 in which the semiconductor element 2 is accommodated is formed approximately in the center of the package body 1 .
パッケージ体１は、たとえばグラスチックに充填剤とし
て無機粉末を加えた混合物を射出成形やトランスファー
成形、圧縮成形して得ることができる。パッケージ体１
を形成するなめに用いられるグラスチックとしては、耐
熱性プラスチックがあり、ｐ：体的には、エフＩでキシ
樹脂、ポリイミド樹脂、フェノール樹脂、不飽和ポリエ
ステル樹脂、シリコーン樹脂などの熱硬化性（３脂、ポ
リフェニレンオキシド（ＰＰＯ） 、ポリエーテルスル
ホン（ＰＥＳ） 、ポリエーテルエーテルゲトン（ＰＥ
Ｅに）、ポリフェニレンサルファイＨ（ＰＰＳ） ＝ボ
リアリルスルホン、ポリアミド・イミドなどの加熱歪温
度（１１，Ｄ、Ｔ、）が１８０ ’Ｃ以上である熱可塑
性樹脂が挙げられる。プラスチックの形状としては粉末
、ペレットなどの固型であっても、また液状であっても
よい、また、上記無機粉末としては、たとえばアルミナ
粉末、シリカ粉末、ボロンナイトライド粉末などの耐熱
性無機粉末が挙げられる。The package body 1 can be obtained, for example, by injection molding, transfer molding, or compression molding a mixture of plastic and inorganic powder added as a filler. Package body 1
There are heat-resistant plastics as the glass used to form the resin. 3 fatty acids, polyphenylene oxide (PPO), polyether sulfone (PES), polyether ether getone (PE)
E), polyphenylene sulfide H (PPS) = polyarylsulfone, polyamide imide, and other thermoplastic resins having a heat strain temperature (11, D, T,) of 180'C or higher. The shape of the plastic may be solid such as powder or pellet, or liquid.The inorganic powder may include heat-resistant inorganic powder such as alumina powder, silica powder, boron nitride powder, etc. can be mentioned.
次に、本実施例では、四部３が形成されたパッケージ体
１の表面に接着剤を塗布して第１接着剤層４を形成する
。接着剤としては、ゴミの発生原因となる充填剤を含ま
ないクリヤーな接着剤が好ましく、具体的には、エポキ
シ樹脂、ポリイミド樹脂、シリコーン樹脂などの熱硬化
性樹脂が用いられる。Next, in this embodiment, an adhesive is applied to the surface of the package body 1 on which the four parts 3 are formed to form the first adhesive layer 4. The adhesive is preferably a clear adhesive that does not contain fillers that cause dust, and specifically thermosetting resins such as epoxy resins, polyimide resins, and silicone resins are used.
次に、第１図に示す実施例では、接着剤層４の表面にリ
ードフレーム５をその外側端部がパラゲージ体１外に突
出するように載置した後、加圧加熱してリードフレーム
５をパッケージ体１に接着する。Next, in the embodiment shown in FIG. 1, the lead frame 5 is placed on the surface of the adhesive layer 4 so that its outer end protrudes outside the paragauge body 1, and then the lead frame 5 is heated under pressure. is glued to the package body 1.
リードフレーム５の材料としては、具体的には、４２％
Ｎｉ−Ｆｅ合金、リン青銅などの金属が挙げられる。Specifically, the material of the lead frame 5 is 42%.
Examples include metals such as Ni-Fe alloy and phosphor bronze.
本発明では、リードフレーム５を接着剤層４に接着させ
る前に、このリードフレーム５の少なくとも内側端部を
酸で前処理する。この前処理に用いられる酸としては、
たとえば、塩酸、硫酸、リン酸などの無ｎ酸や、ＲＣＯ
ＯＨ（Ｒ，は水素または炭素数１〜４の炭素である）な
どの有機酸が例示される。In the present invention, before bonding the lead frame 5 to the adhesive layer 4, at least the inner end of the lead frame 5 is pretreated with acid. The acid used for this pretreatment is
For example, non-acid such as hydrochloric acid, sulfuric acid, phosphoric acid, RCO
Organic acids such as OH (R, is hydrogen or carbon having 1 to 4 carbon atoms) are exemplified.
このような酸を用いてリードフレーム５の少なくとも内
側端部を前処理するための手段としては、ディッピング
法、スプレー法、ロールコータ−法、カーテンフローコ
ーター法などの手段が採用され得る。たとえばディッピ
ング法により酸でリードフレーム５を前処理するには、
リードフレーム５を酸の溶液内に所定時間浸漬させれば
よい、浸漬のための時間は、酸の種類、酸の濃度または
リードフレーム５の材質等によっても異なるが、好まし
くは０．５〜３０分間である。このように酸で処理した
後のリードフレーム５は、たとえば超音波洗浄等の手段
で洗浄される。As a means for pre-treating at least the inner end portion of the lead frame 5 using such an acid, methods such as a dipping method, a spray method, a roll coater method, a curtain flow coater method, etc. may be employed. For example, to pre-treat the lead frame 5 with acid using a dipping method,
The lead frame 5 may be immersed in an acid solution for a predetermined time. The immersion time varies depending on the type of acid, the acid concentration, the material of the lead frame 5, etc., but is preferably 0.5 to 30. It is a minute. The lead frame 5 treated with acid in this manner is cleaned by, for example, ultrasonic cleaning.
このようにリードフレーム５を酸で前処理することで、
リードフレーム５の表面を粗面化させ、接着剤との接着
性を向上させることが可能となる。By pre-treating the lead frame 5 with acid in this way,
It becomes possible to roughen the surface of the lead frame 5 and improve its adhesion to the adhesive.
次に、本実施例では、凹所３の最底部に形成されたパッ
ド部６に半導体素子２をダイボンディングするとともに
、半導体素子２とリードフレーム５とをワイヤーボンデ
ィングして電気的に接続する。Next, in this embodiment, the semiconductor element 2 is die-bonded to the pad portion 6 formed at the bottom of the recess 3, and the semiconductor element 2 and the lead frame 5 are electrically connected by wire bonding.
次に、本実施例では、パッケージ体１の表面周囲に接着
剤を塗布して第２接着剤層７を形成し、その後蓋材８を
その上に載置あるいは蓋材８の表面周囲に接着剤を塗布
してパッケージ上に載置し、これらを加圧接着する。第
２接着剤層７を構成する接着剤は、第１接着剤層７を構
成する接着剤と同種のものが用いられるが、全く同一の
ものである必要はない、これら第１．第２接着剤層４，
７を構成する接着剤は、凹所３内を密封するシール材と
しての機能をも有する。Next, in this embodiment, an adhesive is applied around the surface of the package body 1 to form the second adhesive layer 7, and then the lid material 8 is placed on top of the second adhesive layer 7, or is bonded around the surface of the lid material 8. The package is coated with an adhesive, placed on the package, and then bonded under pressure. The adhesive constituting the second adhesive layer 7 is the same type as the adhesive constituting the first adhesive layer 7, but it does not have to be exactly the same. second adhesive layer 4,
The adhesive constituting 7 also functions as a sealing material that seals the inside of the recess 3.
第２接着剤層７上に接着させる蓋材８は、凹所３内に収
容された半導体素子２が外部から見えるように透明であ
ることが好ましいが、必ずしも透明でなくともよい、蓋
材８としては、たとえば石英ガラス板、サファイア板、
透明アルミナ板、透明プラスチック板などの透明蓋材、
着色ガラス板、着色プラスチック板などの不透明蓋材が
用いられる。The lid material 8 to be adhered onto the second adhesive layer 7 is preferably transparent so that the semiconductor element 2 housed in the recess 3 can be seen from the outside, but the lid material 8 does not necessarily have to be transparent. For example, quartz glass plate, sapphire plate,
Transparent lid materials such as transparent alumina plates and transparent plastic plates,
An opaque lid material such as a colored glass plate or a colored plastic plate is used.
なお、本発明は、上述した実施例に限定されるものでは
なく、本発明の範囲内で種々に改変することができる。Note that the present invention is not limited to the embodiments described above, and can be variously modified within the scope of the present invention.
たとえば、本発明方法により製造される半導体装置は、
第１図に示すものに限らず、半導体素子およびそれに接
続されるリードフレームの少なくとも一部がパッケージ
体内に気密に密封される全ての半導体装置に対して適用
することが可能である。For example, a semiconductor device manufactured by the method of the present invention is
The present invention is not limited to the one shown in FIG. 1, but can be applied to all semiconductor devices in which a semiconductor element and at least a portion of a lead frame connected thereto are hermetically sealed within a package.
たとえば第２図に示すように、リードフレーム５ａがパ
ッケージ体１ａを射出成形する際にインサート成形され
ている半導体装置１２ａを製造する際に、本発明方法を
適用することが可能である。For example, as shown in FIG. 2, the method of the present invention can be applied to manufacturing a semiconductor device 12a in which a lead frame 5a is insert-molded when a package body 1a is injection molded.
第２図に示す実施例に本発明方法を適用する場合には、
リードフレーム５ａをパッケージ体１ａと共に一体にイ
ンサート成形する前に、このリードフレーム５ａの少な
くとも内側端部を酸で前処理すればよい、前処理のため
の酸は、第１図に示す実施例で用いた酸と同様の酸が用
いられる。When applying the method of the present invention to the embodiment shown in FIG.
Before integrally insert-molding the lead frame 5a with the package body 1a, at least the inner end portion of the lead frame 5a may be pretreated with an acid. An acid similar to that used is used.
この実施例の場合には、リードフレームの少なくとら内
ｆｆｌ端部が酸で前処理しであることから、リードフレ
ームの表面が酸で粗面化され、このリードフレームと合
成樹脂成形体であるパッケージ体との接着性が向上し、
高湿度もしくは高温などの悪条件下でも、その界面から
水等が内部に侵入することもない。In the case of this embodiment, since at least the ffl end inside the lead frame is pretreated with acid, the surface of the lead frame is roughened with acid, and the lead frame and the synthetic resin molded body are Improved adhesion with the package body,
Even under adverse conditions such as high humidity or high temperature, water etc. will not enter the interior through the interface.
また、上述した各実施例では、単にリードフレームを酸
で前処理した後に、リードフレームの少なくとも一部を
パッケージ体内に封止するようにしたが、本発明はこれ
に限定されず、リードフレームを酸で前処理する前に、
このリードフレームの少なくとも内ＩＩＩＩ＠部を還元
剤で前処理するようにしてもよい、還元剤としては、た
とえばアスコルビン酸−リンゴ酸の水−アルコール溶液
などが用いられる。このように酸で前処理する前に還元
剤で前処理するのは、リードフレーム表面の酸化被膜を
収り除き、後工程での酸処理を行ない易くするためであ
る。Furthermore, in each of the above embodiments, at least a portion of the lead frame is sealed inside the package after simply pretreating the lead frame with acid, but the present invention is not limited to this. Before pretreatment with acid,
At least the inner part III@ of this lead frame may be pretreated with a reducing agent. As the reducing agent, for example, a water-alcoholic solution of ascorbic acid and malic acid is used. The reason why the lead frame is pretreated with a reducing agent before being pretreated with an acid is to remove the oxide film on the surface of the lead frame and facilitate the acid treatment in the subsequent process.
さらに本発明では、このようなリードフレームの酸処理
後に、このリードフレームの少なくとも内側端部を酸化
処理するようにしてもよい、酸化処理を行なうのは、リ
ードフレームとパブケージ体成形材料とのあるいは接着
剤との接着力をより強固にするためである。Further, in the present invention, after the acid treatment of the lead frame, at least the inner end portion of the lead frame may be oxidized. This is to strengthen the adhesive force with the adhesive.
このような酸化処理を行なうための手段としては、リー
ドフレームを空気中で４００〜５００℃の温度で１分〜
１０分間熱処理する方法や、クロム酸、硫酸、硝酸で処
理する方法などがある。As a means for performing such oxidation treatment, the lead frame is heated in air at a temperature of 400 to 500°C for 1 minute to 500°C.
There are methods such as heat treatment for 10 minutes and treatment with chromic acid, sulfuric acid, or nitric acid.
ｌ肌二み遇
以上説明してきたように、本発明によれば、リードフレ
ームの少なくとも内側端部を酸で前処理した後に、半導
体素子とリードフレームの少なくとも一部とをパッケー
ジ体内に封止するようにしなので、リードフレームの表
面が酸で粗面化され、リードフレームとパッケージ体あ
るいは接着剤との接着性がさらに向上し、悪条件下でも
、これらの界面から水が内部に侵入することがなくなり
、製品の耐久性が向上するという優れた効果を有する。As described above, according to the present invention, at least the inner end of the lead frame is pretreated with acid, and then the semiconductor element and at least a portion of the lead frame are sealed in the package body. As a result, the surface of the lead frame is roughened with acid, which further improves the adhesion between the lead frame and the package body or adhesive, and prevents water from entering the interior through these interfaces even under adverse conditions. This has the excellent effect of improving the durability of the product.
次に本発明をさらに具体的な実施例に基づき説明するが
、本発明これら実施例に限定されない。Next, the present invention will be explained based on more specific examples, but the present invention is not limited to these examples.
Ｋ胤亘ユ
リードフレームを３０％塩酸で前処理した後に、このリ
ードフレームを金型内に設置し、合成樹脂を金型内に射
出成形して、リードフレームが一体となった第２図に示
すようなパッケージ体１ａを得た。このようなパッケー
ジ体１ａの凹所３を、透明ガラス板からなる蓋材８で、
エポキシ系接着剤を用いて密封した。After pre-treating the lead frame with 30% hydrochloric acid, the lead frame was placed in a mold, and synthetic resin was injection molded into the mold, resulting in the integrated lead frame shown in Figure 2. A package body 1a as shown was obtained. The recess 3 of such a package body 1a is covered with a lid member 8 made of a transparent glass plate.
It was sealed using epoxy adhesive.
このようにして得られた半導体装置をプレッシャークツ
カー（ＰＣＴ）試験しなところ、表１の結果を得た。な
お、ＰＣＴ試験とは、加圧水槽内に水を入れ、水面より
１／４インチ以上に設置した網に供試品を入れ、密閉後
水蒸気で加圧し、耐湿性を評価する試験である。本実施
例では、蒸気圧力を２気圧とし、温度を１２１°Ｃとし
た。When the semiconductor device thus obtained was subjected to a pressure tester (PCT) test, the results shown in Table 1 were obtained. Note that the PCT test is a test in which water is placed in a pressurized water tank, the sample is placed in a net set at 1/4 inch or more above the water surface, and the product is sealed and pressurized with steam to evaluate moisture resistance. In this example, the steam pressure was 2 atm and the temperature was 121°C.
−投■ユ
リードフレームを３０％塩酸で前処理しない以外は、実
施例１と同様にして半導体装置を得た。- A semiconductor device was obtained in the same manner as in Example 1, except that the cast lead frame was not pretreated with 30% hydrochloric acid.
その半導体装置のＰＣＴ試験の結果を表１に示す。Table 1 shows the results of the PCT test of the semiconductor device.
Ｊえ−−−二Ｌ
ＰＣＴ試験によっても、本発明方法を行なうことにより
製品の封合を延ばすことができることが確認された。The PCT test also confirmed that the sealing of the product could be extended by carrying out the method of the invention.
第１図は本発明の一実施例に係る半導体装置の製造方法
を示す要部断面図・、第２図は本発明の他の実施例に係
る半導体装置の製造方法を示す要部断面図である。
１ 。
１ａ・・・パッケージ体
２・・・半導体素子
３・・・凹所
４・・・接着剤
５゜
５ａ・・・リードフレーム
６・・・パッド部
ａ
・・・接着剤
８・・・蓋材
１２゜
２ａ
・・・半導体装置FIG. 1 is a sectional view of a main part showing a method of manufacturing a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a sectional view of a main part showing a method of manufacturing a semiconductor device according to another embodiment of the invention. be. 1. 1a...Package body 2...Semiconductor element 3...Recess 4...Adhesive 5゜5a...Lead frame 6...Pad part a...Adhesive 8...Lid material 12゜2a...Semiconductor device
Claims (1)
ードフレームの少なくとも一部をパッケージ体内に気密
に封止してなる半導体装置の製造方法において、 前記リードフレームの少なくとも内側端部を酸で前処理
した後に、半導体素子とリードフレームの少なくとも一
部をパッケージ体内に封止することを特徴とする半導体
装置の製造方法。 ２）前記リードフレームの少なくとも内側端部を酸で前
処理する前に、このリードフレームの少なくとも内側端
部を還元剤で前処理することを特徴とする請求項第１項
に記載の半導体装置の製造方法。 ３）前記リードフレームの少なくとも内側端部を酸で前
処理した後に、このリードフレームの少なくとも内側端
部を酸化処理することを特徴とする請求項第１項または
第２項に記載の半導体装置の製造方法。[Scope of Claims] 1) A method for manufacturing a semiconductor device in which a semiconductor element and at least a part of a lead frame electrically connected to the semiconductor element are hermetically sealed in a package, comprising: 1. A method of manufacturing a semiconductor device, comprising pre-treating an inner end portion with an acid, and then sealing at least a portion of a semiconductor element and a lead frame within a package body. 2) The semiconductor device according to claim 1, wherein at least the inner end of the lead frame is pretreated with a reducing agent before at least the inner end of the lead frame is pretreated with an acid. Production method. 3) The semiconductor device according to claim 1 or 2, wherein at least the inner end portion of the lead frame is pretreated with an acid, and then at least the inner end portion of the lead frame is subjected to an oxidation treatment. Production method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63219491A JPH0266963A (en) | 1988-08-31 | 1988-08-31 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63219491A JPH0266963A (en) | 1988-08-31 | 1988-08-31 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0266963A true JPH0266963A (en) | 1990-03-07 |
Family
ID=16736280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63219491A Pending JPH0266963A (en) | 1988-08-31 | 1988-08-31 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0266963A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04110025U (en) * | 1991-03-12 | 1992-09-24 | 日本特殊陶業株式会社 | Ladder type electric filter case |
| JPH07321365A (en) * | 1994-05-27 | 1995-12-08 | Fuji Electric Corp Res & Dev Ltd | Thin-film solar battery |
| US7205180B1 (en) | 2003-07-19 | 2007-04-17 | Ns Electronics Bangkok (1993) Ltd. | Process of fabricating semiconductor packages using leadframes roughened with chemical etchant |
-
1988
- 1988-08-31 JP JP63219491A patent/JPH0266963A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04110025U (en) * | 1991-03-12 | 1992-09-24 | 日本特殊陶業株式会社 | Ladder type electric filter case |
| JPH07321365A (en) * | 1994-05-27 | 1995-12-08 | Fuji Electric Corp Res & Dev Ltd | Thin-film solar battery |
| US7205180B1 (en) | 2003-07-19 | 2007-04-17 | Ns Electronics Bangkok (1993) Ltd. | Process of fabricating semiconductor packages using leadframes roughened with chemical etchant |
| US7327017B2 (en) | 2003-07-19 | 2008-02-05 | Utac Thai Limited | Semiconductor package including leadframe roughened with chemical etchant to prevent separation between leadframe and molding compound |
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