JPS5837697B2 - Ｍｉｓ ガタハンドウタイシユウセキカイロソウチ - Google Patents

Ｍｉｓ ガタハンドウタイシユウセキカイロソウチ

Info

Publication number
JPS5837697B2
JPS5837697B2 JP48049756A JP4975673A JPS5837697B2 JP S5837697 B2 JPS5837697 B2 JP S5837697B2 JP 48049756 A JP48049756 A JP 48049756A JP 4975673 A JP4975673 A JP 4975673A JP S5837697 B2 JPS5837697 B2 JP S5837697B2
Authority
JP
Japan
Prior art keywords
silicon layer
polycrystalline silicon
insulating film
gate
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP48049756A
Other languages
English (en)
Japanese (ja)
Other versions
JPS501693A (en:Method
Inventor
実 藤田
怜 目黒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP48049756A priority Critical patent/JPS5837697B2/ja
Publication of JPS501693A publication Critical patent/JPS501693A/ja
Publication of JPS5837697B2 publication Critical patent/JPS5837697B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP48049756A 1973-05-07 1973-05-07 Ｍｉｓ ガタハンドウタイシユウセキカイロソウチ Expired JPS5837697B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP48049756A JPS5837697B2 (ja) 1973-05-07 1973-05-07 Ｍｉｓ ガタハンドウタイシユウセキカイロソウチ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48049756A JPS5837697B2 (ja) 1973-05-07 1973-05-07 Ｍｉｓ ガタハンドウタイシユウセキカイロソウチ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP57179861A Division JPS58116761A (ja) 1982-10-15 1982-10-15 Ｍｉｓ型半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JPS501693A JPS501693A (en:Method) 1975-01-09
JPS5837697B2 true JPS5837697B2 (ja) 1983-08-18

Family

ID=12840018

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48049756A Expired JPS5837697B2 (ja) 1973-05-07 1973-05-07 Ｍｉｓ ガタハンドウタイシユウセキカイロソウチ

Country Status (1)

Country Link
JP (1) JPS5837697B2 (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59158540U (ja) * 1983-04-11 1984-10-24 本田技研工業株式会社 車両用残光式ル−ムランプ

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5983635U (ja) * 1982-11-30 1984-06-06 日産ディーゼル工業株式会社 車両用アクセルリンク装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5628775Y2 (en:Method) * 1972-03-29 1981-07-08

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59158540U (ja) * 1983-04-11 1984-10-24 本田技研工業株式会社 車両用残光式ル−ムランプ

Also Published As

Publication number Publication date
JPS501693A (en:Method) 1975-01-09

Similar Documents

Publication Publication Date Title
US3653978A (en) Method of making semiconductor devices
US4395726A (en) Semiconductor device of silicon on sapphire structure having FETs with different thickness polycrystalline silicon films
KR920009745B1 (ko) 반도체장치의 제조방법
JPS60210863A (ja) 相補ｍｏｓ集積回路及びその製造方法
JP2846596B2 (ja) 埋込み接合を有する半導体装置の製造方法
JPS6042626B2 (ja) 半導体装置の製造方法
JPS6243549B2 (en:Method)
KR960026747A (ko) 반도체 집적회로장치의 제조방법
JP2633873B2 (ja) 半導体ＢｉＣＭＯＳ装置の製造方法
JPS5837697B2 (ja) Ｍｉｓ ガタハンドウタイシユウセキカイロソウチ
JPH0391247A (ja) Ｍｏｓｆｅｔ空乏デバイス
JP2766492B2 (ja) Ｍｏｓ技術で集積キャパシタを製造するための方法
JPH08293598A (ja) 半導体装置とその製造方法
JPH1050860A (ja) 半導体装置およびその製造方法
USRE28704E (en) Semiconductor devices
US4772568A (en) Method of making integrated circuit with pair of MOS field effect transistors sharing a common source/drain region
JPS62262462A (ja) 半導体装置
JPS61119078A (ja) Ｍｏｓ型半導体装置
JPS58116761A (ja) Ｍｉｓ型半導体集積回路装置の製造方法
JPS5818785B2 (ja) シユウセキカイロソウチノ セイゾウホウホウ
JPS616871A (ja) 電界効果トランジスタの製造方法
JP2993080B2 (ja) 相補型薄膜トランジスタの製造方法
JPS6131633B2 (en:Method)
JPH07240522A (ja) 半導体集積回路装置およびその製造方法
JPS605067B2 (ja) Ｍｏｓ形半導体装置