JPS5837692B2 - Handout Taisouchino Seizouhouhou - Google Patents
Handout Taisouchino SeizouhouhouInfo
- Publication number
- JPS5837692B2 JPS5837692B2 JP6929375A JP6929375A JPS5837692B2 JP S5837692 B2 JPS5837692 B2 JP S5837692B2 JP 6929375 A JP6929375 A JP 6929375A JP 6929375 A JP6929375 A JP 6929375A JP S5837692 B2 JPS5837692 B2 JP S5837692B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- mold
- thin plate
- semiconductor device
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Injection Moulding Of Plastics Or The Like (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
Description
【発明の詳細な説明】
本発明はミニモッドと称される半導体装置の製造方法に
関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a semiconductor device called a minimod.
従来のこの種の半導体装置の製造方法は、第1図釦よび
第2図に示すように、まず銅の如き箔状金属を積層した
ポリイミド等よりなるフィルム(薄板)1にエッチング
を施してパターン状のリード部2を備えたフレームを形
成する。In the conventional manufacturing method of this type of semiconductor device, as shown in FIG. 1 and FIG. 2, a film (thin plate) 1 made of polyimide or the like laminated with a foil metal such as copper is first etched to form a pattern. A frame including a lead portion 2 having a shape is formed.
次にフイルム1の孔部3に延出されたリード部2に半導
体素子4をマウントし、この半導体素子マウント部をプ
ラスチック製枠体5及びしき板6で囲い、エポキシ樹脂
7等を注入してキャスティング成形するものである。Next, the semiconductor element 4 is mounted on the lead part 2 extending into the hole 3 of the film 1, the semiconductor element mounting part is surrounded by a plastic frame 5 and a partition plate 6, and an epoxy resin 7 or the like is injected. It is molded by casting.
しかしながら上記製造方法によれば、しき板6及び枠体
5を治具に正確に設置するのに多大の時間を要する。However, according to the above-mentioned manufacturing method, it takes a lot of time to accurately install the partition plate 6 and the frame body 5 on the jig.
捷た多量生産を行なう場合にはフィルム1の各半導体素
子マウント部にそれぞれ枠体5及びしき板6を設置する
が、その際に多大の時間を要するし、これら各枠体5内
に順次樹脂の注入を行なうのでは、これ捷た多犬の時間
を要する。In the case of mass production, a frame body 5 and a partition plate 6 are installed at each semiconductor element mounting portion of the film 1, but this requires a lot of time, and resin is sequentially placed inside each frame body 5. It takes a lot of time and a lot of time to perform the injection.
1た枠体5及びしき板6が素子マウント部に正確に固定
されない場合には、フレームと枠体1たはしき板との間
に隙間が生じ、ここから樹脂が流れ出て樹脂ばりと称す
る不要の樹脂突出物が形成されるし、樹脂70表面に凹
み8が生じたりして使用上問題となる。If the frame 5 and the shield plate 6 are not accurately fixed to the element mount section, a gap will be created between the frame and the frame 1 or the shield plate, and resin will flow out from this gap, causing unnecessary resin burrs. In addition, resin protrusions are formed, and dents 8 are formed on the surface of the resin 70, causing problems in use.
本発明は上記従来方法の種々の欠点を改善するためにな
されたもので、作業性が良好でかつ使用上問題が生じる
ことのない半導体装置の製造方法を提供しようとするも
のである。The present invention has been made in order to improve the various drawbacks of the above-mentioned conventional methods, and it is an object of the present invention to provide a method for manufacturing a semiconductor device that is easy to work with and does not cause problems in use.
以下図面を参照して本発明の一実施例を説明する。An embodiment of the present invention will be described below with reference to the drawings.
第3図にあ・いて11は樹脂成形を行なう半導体装置、
12,13ぱ樹脂成形を行なうための一対の金型を示す
。In Fig. 3, 11 is a semiconductor device that performs resin molding;
12 and 13 show a pair of molds for resin molding.
半導体装置11は、第1図及び第2図に示したものと同
じものであり、可撓性のある絶縁性フイルム14にパタ
ーン状の金属箔リード部15が積層形成され、このリー
ド部15の一部は薄板14に設けられた孔部16に延出
されていてこの延出されたリード部15に半導体素子1
7が金ボール18を介してマウントされてなるものであ
る。The semiconductor device 11 is the same as that shown in FIGS. 1 and 2, and has a patterned metal foil lead portion 15 laminated on a flexible insulating film 14. A part of the lead portion 15 extends into a hole 16 provided in the thin plate 14, and a semiconductor element 1 is inserted into the extended lead portion 15.
7 is mounted via a gold ball 18.
金型12,13は半導体装置11の素子マウント部に樹
脂を注入して戒形を行なうためのもので、例えば金型1
3には、リード部15が形成されていない部分の薄板面
と対向した部分に、金型12,13の室19と連通する
樹脂注入溝20を設けたものである。The molds 12 and 13 are used to inject resin into the element mount portion of the semiconductor device 11 to form a mold.For example, the mold 1
3 is provided with a resin injection groove 20 communicating with the chamber 19 of the molds 12 and 13 in a portion facing the thin plate surface where the lead portion 15 is not formed.
この溝20は図示されていないが外部からの樹脂注入路
に連通している。Although not shown, this groove 20 communicates with a resin injection path from the outside.
しかして第3図に示す如く、フイルム140両面を金型
12,13で挾んで半導体素子マウント部を室19内に
収容し、樹脂注入溝20からエポキシ等よりなる樹脂2
1を注入し素子マウント部を樹脂で低圧成形するもので
ある。As shown in FIG. 3, both sides of the film 140 are sandwiched between the molds 12 and 13, the semiconductor element mounting portion is accommodated in the chamber 19, and a resin 2 made of epoxy or the like is poured into the resin injection groove 20.
1 is injected and the element mounting portion is molded with resin at low pressure.
そして樹脂戒形完了後は、全体を金型12,13から取
はずし、注入溝200部分で形戒された樹脂もとりはず
す。After the molding of the resin is completed, the entire mold is removed from the molds 12 and 13, and the resin molded at the injection groove 200 is also removed.
この場合、戒形用エポキシ樹脂21には離型剤が含有さ
れているため、ポリイミドフイルム14とは接着せず、
容易に取はずすことができる。In this case, since the epoxy resin 21 contains a mold release agent, it does not adhere to the polyimide film 14.
Can be easily removed.
1た本発明ではリードが形或されている面とは反対側の
絶縁性薄板面と対向した金型の面に設けられた樹脂注入
溝から金型内に樹脂を注入している。First, in the present invention, resin is injected into the mold from a resin injection groove provided on the surface of the mold facing the insulating thin plate surface opposite to the surface on which the leads are formed.
つ寸り樹脂注入溝20は、リード15が設けられている
絶縁性薄板15上ではなく、薄板15下に設けられる。The thin resin injection groove 20 is provided under the thin insulating plate 15, not on the insulating thin plate 15 where the leads 15 are provided.
このため、薄板15の下面はり一ド15と薄板との間の
接着剤が配置されない側の面だから、注入溝20の部分
で形威された樹脂を除去しやすいという利点がある。Therefore, since the lower surface of the thin plate 15 is the side where the adhesive between the adhesive 15 and the thin plate is not placed, there is an advantage that the resin formed in the injection groove 20 can be easily removed.
1た上記のように本発明では注入溝20ぱ薄板下に設け
られるから、薄板15上でリード15がどのように複雑
に(例えば放射状に)配置されていてもリードが樹脂注
人の邪魔にならず、従って樹脂注入が容易化されるとい
う利点がある。1. As described above, in the present invention, the injection groove 20 is provided under the thin plate, so no matter how complicated the leads 15 are arranged (for example, radially) on the thin plate 15, the leads will not get in the way of the resin pourer. Therefore, there is an advantage that resin injection is facilitated.
以上では半導体装置が1個の場合につき説明したが、通
常は多量生産を行なう。Although the case in which the number of semiconductor devices is one has been described above, mass production is usually performed.
この場合は、当然のことながら金型12,13に室19
と同様のものを多数設け、1たこれら各室に附随して溝
20と同様の樹脂注入溝を設けることにより、第4図に
示す如・く多数の半導体製品を一度に得るものである。In this case, naturally, the chamber 19 in the molds 12 and 13 is
By providing a large number of similar chambers, and by providing a resin injection groove similar to the groove 20 in association with each of these chambers, a large number of semiconductor products can be obtained at once as shown in FIG.
以上説明した如く本発明によれば、半導体素子マウント
部をそなえた絶縁性薄板を金型に配置して成形用樹脂を
注入するだけでよいから、作業性が良く、多量生産に適
し、また金型で絶縁性薄板を押え込むから、不要な樹脂
ばりを生じるお・それがなく、1た金型内に充分樹脂を
注入できるから、第2図の如き凹み8を生じることのな
い半導体装置の製造方法が提供できるものである。As explained above, according to the present invention, it is only necessary to place the insulating thin plate provided with the semiconductor element mounting part in the mold and inject the molding resin, so it is easy to work, suitable for mass production, and Since the insulating thin plate is pressed down by the mold, there is no risk of unnecessary resin burrs being produced, and since sufficient resin can be injected into the mold, semiconductor devices can be manufactured without creating the dents 8 as shown in Figure 2. The manufacturing method can be provided.
第1図、第2図は従来の半導体装置の製造方法を説明す
るための斜視図、断面図、第3図は本発明の一実施例を
説明するための断面図、第4図はこれにより得られた半
導体装置の斜視図である。
12.13・・・金型、14・・・フイルム、15・・
・り・・・ド部、16・・・孔部、17・・・半導体素
子、20・・・樹脂注入溝、21・・・戒形樹脂。1 and 2 are perspective views and cross-sectional views for explaining a conventional method of manufacturing a semiconductor device, FIG. 3 is a cross-sectional view for explaining an embodiment of the present invention, and FIG. 4 is a cross-sectional view for explaining an embodiment of the present invention. FIG. 3 is a perspective view of the obtained semiconductor device. 12.13... Mold, 14... Film, 15...
- Lead portion, 16... Hole portion, 17... Semiconductor element, 20... Resin injection groove, 21... Prescription resin.
Claims (1)
ドが積層形威され、このリードの一部は前記薄板に設け
られた孔部に延出されていてこの孔部に延出されたリー
ドには半導体素子がマウントされてなる半導体装置の前
記半導体素子を樹脂で覆うために、前記薄板の両面を金
型で挾んで該金型内に前記半導体素子のマウント部を収
容し、前記リードが形或されている面とは反対側の薄板
面と対向した金型の面に設けられた樹脂注入溝から金型
内に樹脂を注入して前記素子マウント部を樹脂で低圧成
形することを特徴とする半導体装置の製造方法。1 A 79-tone metal foil lead is laminated on a flexible insulating thin plate, and a part of this lead extends into a hole provided in the thin plate. sandwiching both sides of the thin plate with a mold and accommodating the mounting part of the semiconductor element in the mold, in order to cover the semiconductor device with resin, in which the semiconductor element is mounted on the lead, A resin is injected into the mold from a resin injection groove provided on a surface of the mold opposite to the thin plate surface opposite to the surface on which the leads are formed, and the element mount portion is molded at low pressure with the resin. A method for manufacturing a semiconductor device, characterized in that:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6929375A JPS5837692B2 (en) | 1975-06-09 | 1975-06-09 | Handout Taisouchino Seizouhouhou |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6929375A JPS5837692B2 (en) | 1975-06-09 | 1975-06-09 | Handout Taisouchino Seizouhouhou |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS51144579A JPS51144579A (en) | 1976-12-11 |
JPS5837692B2 true JPS5837692B2 (en) | 1983-08-18 |
Family
ID=13398376
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6929375A Expired JPS5837692B2 (en) | 1975-06-09 | 1975-06-09 | Handout Taisouchino Seizouhouhou |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5837692B2 (en) |
-
1975
- 1975-06-09 JP JP6929375A patent/JPS5837692B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS51144579A (en) | 1976-12-11 |
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