JPH0625959Y2 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH0625959Y2 JPH0625959Y2 JP12679787U JP12679787U JPH0625959Y2 JP H0625959 Y2 JPH0625959 Y2 JP H0625959Y2 JP 12679787 U JP12679787 U JP 12679787U JP 12679787 U JP12679787 U JP 12679787U JP H0625959 Y2 JPH0625959 Y2 JP H0625959Y2
- Authority
- JP
- Japan
- Prior art keywords
- wiring board
- wire
- force
- resin
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
Description
【考案の詳細な説明】 産業上の利用分野 本考案は、素子をマウントする配線基板と、前記配線基
板の周囲に、複数本平行配置したリードの内端とを、樹
脂にて封止する半導体装置に関し、詳しくは、上記配線
基板と上記リードとを、電気的に接続するワイヤボンデ
ィングに関するものである。DETAILED DESCRIPTION OF THE INVENTION Industrial Field of the Invention The present invention is a semiconductor in which a wiring board on which an element is mounted and inner ends of leads arranged in parallel around the wiring board are sealed with resin. More specifically, the present invention relates to wire bonding for electrically connecting the wiring board and the leads.
従来の技術 従来、この種半導体装置は、絶縁性を有する樹脂製の配
線基板上に、半導体ペレットを含む複数の素子をマウン
トして、配線基板と素子とを、ワイヤボンディング等で
電気的に接続すると共に、上記配線基板の周囲に平行配
置した多数本のリードと上記配線基板とを、ワイヤボン
ディング等で電気的に接続し、これらの主要部を樹脂で
封止した構造が一般的である。2. Description of the Related Art Conventionally, in this type of semiconductor device, a plurality of elements including semiconductor pellets are mounted on an insulating resin wiring board, and the wiring board and the elements are electrically connected by wire bonding or the like. At the same time, a general structure is one in which a large number of leads arranged in parallel around the wiring board and the wiring board are electrically connected by wire bonding or the like, and their main parts are sealed with resin.
しかし、近年では、小型軽量化、高密度実装化に伴う高
付加価値化を実現容易にするため、リードフレームを使
用したトランスファーモールドタイプのハイブリッドＩ
Ｃが開発されており、このハイブリッドＩＣの具体例を
第３図乃至第７図を参照しながら説明する。However, in recent years, in order to facilitate realization of high added value due to downsizing and weight reduction and high-density mounting, a transfer mold type hybrid I using a lead frame is realized.
C has been developed, and a specific example of this hybrid IC will be described with reference to FIGS. 3 to 7.
同図において、（１）は、樹脂製の配線基板で、両面に
導電パターン（２）や抵抗を、薄膜状又は厚膜状に形成
してある。（３）、（３）は、半導体ペレット等の能動
素子や抵抗、コンデンサ等の受動素子からなる各種素子
で、導電パターン（２）上の所定位置にマウントし、ワ
イヤボンディング等で、導電パターン（２）とワイヤ
（４）にて電気的に接続してある。（５）はリードフレ
ームで、上記配線基板（２）と同じ大きさのランド部
（5a）と、ランド部（5a）の周囲にランド部（5a）から
隙間をあけて平行に配置された複数本のリード（5b）、
（5b）…とを具備する。複数本の各リード（5b）、（5
a）…とランド部（5a）とは、直交するタイバー（5c）
にて連結一体化してある。また、各リード（5b）の内端
と導電パターン（２）とは、ワイヤボンディングによっ
て、ワイヤ（６）にて電気的に接続する。このワイヤボ
ンディングは、ワイヤ（６）の先端に形成した金属球
を、導電パターン（２）に押付けて超音波振動を加えて
接続した後、ワイヤ（６）を引き延ばして、金属球のな
いワイヤ（６）の他端を、リード（5b）の内端に押付
け、超音波振動を加えて接続する。（７）は、配線基板
（１）とランド部（5a）との間に挟む絶縁板である。ハ
イブリッドＩＣは、これらリードフレーム（５）のラン
ド部（5a）、及び、リード（5b）の内端、絶縁板
（７）、配線基板（１）等を、樹脂にて封止して完成す
る。In the figure, (1) is a wiring board made of resin, and conductive patterns (2) and resistors are formed on both surfaces in the form of a thin film or a thick film. (3) and (3) are various elements composed of active elements such as semiconductor pellets and passive elements such as resistors and capacitors, which are mounted at predetermined positions on the conductive pattern (2) and are subjected to conductive pattern ( It is electrically connected to 2) by a wire (4). Reference numeral (5) is a lead frame, and a plurality of land portions (5a) having the same size as that of the wiring board (2) and a plurality of them arranged in parallel around the land portion (5a) with a gap from the land portion (5a). Book lead (5b),
(5b) ... is provided. Multiple leads (5b), (5
a) ... and land (5a) are orthogonal tie bars (5c)
Are connected and integrated. The inner end of each lead (5b) and the conductive pattern (2) are electrically connected by a wire (6) by wire bonding. In this wire bonding, a metal ball formed at the tip of the wire (6) is pressed against the conductive pattern (2) to apply ultrasonic vibration and connected, and then the wire (6) is stretched to obtain a wire ( The other end of 6) is pressed against the inner end of the lead (5b) and ultrasonic vibration is applied to connect. (7) is an insulating plate sandwiched between the wiring board (1) and the land portion (5a). The hybrid IC is completed by sealing the land portion (5a) of the lead frame (5), the inner ends of the leads (5b), the insulating plate (7), the wiring board (1), etc. with resin. .
次に、この樹脂にて封止する手段を第５図乃至第７図を
参照しながら説明する。Next, a means for sealing with this resin will be described with reference to FIGS.
同図において、（８）は、凹部を有する下金型、（９）
は、対応して凹部を有する上金型で、下金型（８）と上
金型（９）の各凹部の衝合部分に、上記リードフレーム
（５）や配線基板（１）等を囲繞するキャビティ（10）
を形成する。キャビティー（10）の一側壁面に、ゲート
（11）を形成し、反対側の壁面に、エアーベント（12）
を形成する。In the figure, (8) is a lower mold having a recess, (9)
Is an upper mold correspondingly having a recess, and the lead frame (5), the wiring board (1) and the like are surrounded by the abutting portions of the recesses of the lower mold (8) and the upper mold (9). Cavity (10)
To form. A gate (11) is formed on one side wall of the cavity (10), and an air vent (12) is formed on the opposite side wall.
To form.
配線基板（１）等を樹脂にて封止するには、キャビティ
（10）の略中間位置に、配線基板（１）を配置し、エア
ーベント（12）から、キャビティ（10）内のエアーを抜
きながら、ゲート（11）から、高温の溶融樹脂（13）を
注入する。キャビティ（10）内への溶融樹脂（13）の充
填が完了すると、上、下金型（９）、（８）が外され、
リードフレーム（５）のタイバー（5c）、（5c）…が切
断除去される。そして、樹脂パッケージから導出してい
るリード（5b）、（5b）…を、同一方向に折曲成形し、
所望のハイブリッドＩＣを得る。To seal the wiring board (1) and the like with resin, place the wiring board (1) at approximately the middle position of the cavity (10), and remove the air inside the cavity (10) from the air vent (12). While pulling out, high temperature molten resin (13) is injected from the gate (11). When the filling of the molten resin (13) into the cavity (10) is completed, the upper and lower molds (9) and (8) are removed,
The tie bars (5c), (5c) ... Of the lead frame (5) are cut and removed. Then, the leads (5b), (5b) ... Leading out from the resin package are bent and formed in the same direction,
Obtain the desired hybrid IC.
考案が解決しようとする問題点 キャビティ（10）内へ、溶融樹脂（13）を充填するに際
して、次のような問題点があった。Problems to be Solved by the Invention When filling the molten resin (13) into the cavity (10), there were the following problems.
即ち、ゲート（11）から注入された溶融樹脂（13）は、
第６図に示すように、配線基板（１）、リードフレーム
（５）の上下に分かれて、キャビティ（10）内を流れ
る。溶融樹脂（13）は、高温であるから、配線基板
（１）及びリードフレーム（５）の中央に位置するラン
ド部（5a）を膨張させる。しかし、配線基板（１）の膨
張係数は小さく、ランド部（5a）の膨張係数は大きいこ
とから、ランド部（5a）が相対的に大きく膨張し、結果
的にランド部（5a）の周辺が、配線基板（１）の周辺と
ともに、上に反り返る。また、上下に分かれた溶融樹脂
（13）は、同じ注入圧で押されるが、キャビティ（10）
の上部空間（10a）には、配線基板（１）上に素子
（３）がマウントされ、溶融樹脂（13）の進行を阻止す
るとともに、上部空間（10a）と下部空間（10b）の断面
積が異なることにより、第７図に示すように、下部空間
（10b）を流れる溶融樹脂（13）が、上部空間（10a）を
流れる溶融樹脂（13）よりも相対的に速く進む。従っ
て、樹脂注入が終りに近づく後期注入になると、第８図
に示すように、下部空間（10b）を流れた溶融樹脂（1
3）が、配線基板（１）の上へと盛り上がる。このよう
に、ランド部（5a）及び配線基板（１）の周辺の反り上
がりと、溶融樹脂（13）の上への盛り上がりによって、
リード（5b）の内端と配線基板（１）上の導電パターン
とを、ワイヤボンディングしたワイヤ（６）が、上方へ
押上げられる。ワイヤボンディングは、従来の技術にお
いて説明したように、金属球（6a）を形成して、超音波
振動を加える導電パターン側と、金属球（6a）を形成し
ないで超音波振動を加えるリード（5b）側とがある。金
属球（6a）を形成していないリード（5b）側のワイヤ
（６）に、第８図に示すように、図中右上方向に（Ｆ）
の力が加わったとする。力（Ｆ）は、ワイヤ（６）の長
さ方向（以下「長さ方向」という）の力（Fx）と、ワイ
ヤ（６）の長さ方向と直角な方向（以下「直角方向」と
いう）の力（Fy）とに分解することができる。しかし
て、金属球（6a）を形成していない接続点の接続力は、
ワイヤ（６）の長さ方向の力に強く、ワイヤ（６）の直
角方向の力に弱い。しかし、金属球（6a）を形成してい
ない接続点の力は、第８図で明らかなように、ワイヤ
（６）の長さ方向の力（Fx）が小さく、ワイヤ（６）と
直角方向の力（Fy）が大きい。従って、この接続点に
は、接続力が弱い方向に大きな力（Fy）が加わってお
り、この接続点でワイヤボンディングが外れやすかっ
た。That is, the molten resin (13) injected from the gate (11) is
As shown in FIG. 6, the wiring board (1) and the lead frame (5) are divided into upper and lower parts and flow in the cavity (10). Since the molten resin (13) has a high temperature, it expands the land portion (5a) located in the center of the wiring board (1) and the lead frame (5). However, since the wiring board (1) has a small expansion coefficient and the land portion (5a) has a large expansion coefficient, the land portion (5a) expands relatively, and as a result, the periphery of the land portion (5a) expands. , Along with the periphery of the wiring board (1), warps upward. Also, the molten resin (13) divided into the upper and lower parts is pushed by the same injection pressure, but the cavity (10)
In the upper space (10a) of the device, the element (3) is mounted on the wiring board (1) to prevent the molten resin (13) from advancing, and the cross-sectional area of the upper space (10a) and the lower space (10b). 7, the molten resin (13) flowing in the lower space (10b) advances relatively faster than the molten resin (13) flowing in the upper space (10a), as shown in FIG. Therefore, in the latter stage of the injection of resin, which is near the end, as shown in FIG. 8, the molten resin (1
3) rises above the wiring board (1). In this way, due to the warp around the land portion (5a) and the wiring board (1) and the swelling above the molten resin (13),
The wire (6) obtained by wire bonding the inner end of the lead (5b) and the conductive pattern on the wiring board (1) is pushed upward. As described in the prior art, wire bonding involves forming a metal ball (6a) and applying ultrasonic vibration to the conductive pattern side and a lead (5b) applying ultrasonic vibration without forming the metal ball (6a). ) Side. On the wire (6) on the side of the lead (5b) on which the metal ball (6a) is not formed, as shown in FIG.
Suppose that the power of is added. The force (F) is a force (F x ) in the length direction of the wire (6) (hereinafter referred to as “longitudinal direction”) and a direction perpendicular to the length direction of the wire (6) (hereinafter referred to as “normal direction”). ) Force (F y ) and can be decomposed into Then, the connection force of the connection point that does not form the metal ball (6a) is
It is strong against the longitudinal force of the wire (6) and weak against the perpendicular force of the wire (6). However, the force at the connection point that does not form the metal ball (6a) is small in the longitudinal direction force (F x ) of the wire (6), as shown in FIG. The directional force (F y ) is large. Therefore, a large force (F y ) was applied to this connection point in the direction in which the connection force was weak, and wire bonding was easy to come off at this connection point.
このことは、特に、配線基板（１）が長細いハイブリッ
ドＩＣにおいて、その傾向が強い。This tendency is particularly strong in a hybrid IC in which the wiring board (1) is long and thin.
尚、金属球（6a）によって、ワイヤボンディングされて
いる個所は接続力が強いため、ワイヤボンディングが外
れるということはない。Since the metal ball (6a) has a strong connection force at the location where the wire is bonded, the wire bonding does not come off.
問題点を解決するための手段 本考案は、上記問題点を解決するため素子をマウントし
た配線基板と、前記配線基板の周囲に複数本平行配置し
たリードの内端とを、一方のみ金属球を形成してワイヤ
ボンディングし、上記素子とリード内端とを含む主要部
を樹脂にて封止した半導体装置において、上記金属球を
一部又は全部をリード側に配置して、ワイヤボンディン
グしたものである。In order to solve the above problems, the present invention provides a wiring board on which an element is mounted and an inner end of a plurality of leads arranged in parallel around the wiring board. In a semiconductor device in which a main part including the element and the inner end of the lead is sealed with resin, the metal ball is partially or wholly disposed on the lead side and wire-bonded. is there.
作用 上記解決手段としたことにより、金属球を形成していな
いワイヤを、配線基板にワイヤボンディングした箇所に
おいて、配線基板がリードフレームのランド部と共に反
り上がり、そして溶融樹脂がワイヤを押し上げても、ワ
イヤに加わる力は、接続力が強い長さ方向に大きく作用
するので、ワイヤボンディングが外れ難くなる。By the above-mentioned solution means, the wire not forming the metal sphere, at the place where the wire bonding to the wiring board, the wiring board warps up with the land portion of the lead frame, and even if the molten resin pushes up the wire, Since the force applied to the wire largely acts in the length direction where the connection force is strong, the wire bonding becomes difficult to come off.
実施例 本考案に係る一実施例を、第１図及び第２図を参照しな
がら説明する。但し、従来の技術において説明した部品
と同一部品は、同一符号を付して、その説明を省略す
る。Embodiment An embodiment according to the present invention will be described with reference to FIGS. 1 and 2. However, the same components as those described in the related art are designated by the same reference numerals and the description thereof will be omitted.
第１図は平面図で、配線基板（１）の周囲に、リード
（5b）を複数本平行配置してある。配線基板（１）の両
面には、導電パターン（２）、（２）…を形成し、導電
パターン（２）上の所定位置に、素子（３）、（３）…
をマウントしてある。前記導電パターン（２）と素子
（３）とを、ワイヤボンディングにより電気的に接続
し、又は、導電パターン（２）とリード（5b）の内端と
をワイヤボンディングにより電気的に接続してある。FIG. 1 is a plan view, in which a plurality of leads (5b) are arranged in parallel around the wiring board (1). Conductive patterns (2), (2), ... Are formed on both surfaces of the wiring board (1), and elements (3), (3) ,.
Is mounted. The conductive pattern (2) and the element (3) are electrically connected by wire bonding, or the conductive pattern (2) and the inner ends of the leads (5b) are electrically connected by wire bonding. .
ワイヤボンディングにおいては、従来の技術において説
明したように、ワイヤ（６）の先端に金属球（6a）を形
成するが、この金属球（6a）は、同図に示すように、配
線基板（１）側とリード（5b）側とに交互に配置する。In wire bonding, a metal sphere (6a) is formed at the tip of the wire (6) as described in the prior art, and the metal sphere (6a) can be used as shown in FIG. ) Side and lead (5b) side alternately.
ワイヤボンディング終了後、第２図に示すように、配線
基板（１）やリード（5b）等を上下金型（９）、（８）
の衝合部分にあるキャビティ（10）内に収納する。キャ
ビティ（10）内に溶融樹脂（13）を注入すると、従来の
技術において説明したように、第２図に示す如く、配線
基板（１）が、リードフレーム（５）のランド部（5a）
とともに反り上る。さらに、また、ランド部（5a）の下
側を流れる溶融樹脂（13）が、配線基板（１）の上側を
流れる溶融樹脂（13）よりも先行する。これらによりワ
イヤ（６）が、上方へ押し上げられる。After the wire bonding is completed, as shown in FIG. 2, the wiring board (1), the leads (5b), etc. are mounted on the upper and lower molds (9), (8)
It is stored in the cavity (10) at the abutting part of. When the molten resin (13) is injected into the cavity (10), the wiring board (1) is moved to the land portion (5a) of the lead frame (5) as shown in FIG.
Warps with. Furthermore, the molten resin (13) flowing under the land (5a) precedes the molten resin (13) flowing over the wiring board (1). These push the wire (6) upwards.
ここで、金属球（6a）を形成した一端を、リード（5b）
側にワイヤボンディングし、金属球（6a）を形成してい
ない一端を、配線基板（１）側にワイヤボンディングし
た個所の力の加わり方を、第２図を参照しながら説明す
る。金属球（6a）が形成されていない配線基板（１）側
においては、ワイヤ（６）が上方へ押し上げられること
により、第２図中、右上方向へ（Ｆ）の力が加わる。こ
の力（Ｆ）は、ワイヤ（６）の長さ方向の力（Fx）と、
ワイヤ（６）の長さ方向と直角な力（Fy）とに分解する
ことができる。図示する如く、（Fx）は（Fy）に比べて
大きな力となっているが、金属球（6a）を形成しないで
接続されている個所は、ワイヤ（６）の長さ方向に対し
ては強い接続力をもって接続されているため、（Fx）が
たとえ大きな力であっても、ワイヤボンディングが外れ
ることはない。従って、ワイヤボンディングが完全なま
ま、樹脂により封止することができる。Here, the end where the metal ball (6a) is formed is connected to the lead (5b).
A method of applying a force to a portion where one end of the metal ball (6a) that is wire-bonded to the side is wire-bonded to the wiring substrate (1) side will be described with reference to FIG. On the side of the wiring board (1) where the metal balls (6a) are not formed, the wire (6) is pushed upward, so that a force (F) is applied in the upper right direction in FIG. This force (F) is the force (F x ) in the longitudinal direction of the wire (6),
It can be decomposed into a force (F y ) perpendicular to the length direction of the wire (6). As shown in the figure, (F x ) has a larger force than (F y ), but the points connected without forming the metal ball (6a) are in the longitudinal direction of the wire (6). Since they are connected with a strong connecting force, wire bonding does not come off even if (F x ) is a large force. Therefore, the resin can be sealed while the wire bonding is complete.
以上は、本考案に係る一実施例を説明したもので、本考
案はこの実施例に限定されることなく、本考案の要旨内
において設計変更することができ、例えば、金属球の配
置を、一個所ずつ配線基板側とリード側とに交互に配置
しないで、数本のワイヤを組にして交互に配置すること
や、また、同一の配線基板の接続点と、同一のリードと
を２本のワイヤを一組にして、金属球を配線基板の接続
点とリードとに交互に接続することも可能であり、さら
に、金属球の配置を全部リード側にすることも可能であ
るが、交互にするものよりも、若干接続力が弱くなる。The above is a description of an embodiment of the present invention, the present invention is not limited to this embodiment, it is possible to change the design within the scope of the present invention, for example, the arrangement of the metal balls, Instead of arranging the wiring board side and the lead side one by one, alternately arrange several wires in a group and arrange them alternately. Also, connect the same wiring board and the same lead with two wires. It is possible to connect the metal balls alternately to the connection points of the wiring board and the leads by making a set of the wires, and it is also possible to arrange all the metal balls on the lead side. The connection force will be slightly weaker than that of.
考案の効果 本考案によれば、金属球を一部又は全部をリード側に配
置して、ワイヤボンディングしたことにより、ワイヤボ
ンディングの接続力が相対的に強化され、接続されたワ
イヤが外れ難くなり、半導体装置の品質の向上をもたら
すことができる。Effect of the Invention According to the present invention, by partially or entirely disposing the metal balls on the lead side and performing wire bonding, the connection force of wire bonding is relatively strengthened, and the connected wires are less likely to come off. Therefore, the quality of the semiconductor device can be improved.
第１図は、本考案に係る一実施例を示した平面図、第２
図は、同じく部分断面図である。 第３図は、ハイブリッドＩＣの組立分解斜視図、第４図
は、同じく組立完了斜視図、第５図乃至第７図は、リー
ドフレーム等を樹脂にて封止する際の各動作状態での部
分断面図、第８図は、樹脂モールドの際に生じる問題点
を図示した部分断面図である。 （１）……配線基板、（３）素子、 （５）……リードフレーム、 （5b）……リード、（６）……ワイヤ、 （6a）……金属球、（７）……絶縁板、 （13）……溶融樹脂。FIG. 1 is a plan view showing an embodiment according to the present invention, and FIG.
The figure is also a partial sectional view. FIG. 3 is an exploded perspective view of the hybrid IC, FIG. 4 is a perspective view of completion of assembly of the same, and FIGS. 5 to 7 show operating states when the lead frame and the like are sealed with resin. FIG. 8 is a partial cross-sectional view showing a problem that occurs during resin molding. (1) ... Wiring board, (3) element, (5) ... Lead frame, (5b) ... Lead, (6) ... Wire, (6a) ... Metal ball, (7) ... Insulating plate , (13) …… Molten resin.
Claims (1)
配線基板から離隔しかつほぼ面一に多数本のリードを配
置し、先端に金属球を形成したワイヤの先端側をリード
に、終端側を配線基板にそれぞれ接続し、素子とリード
の一部を含む主要部分を樹脂にて封止したことを特徴と
する半導体装置。1. A wiring board on which an element is mounted is separated from the wiring board, and a large number of leads are arranged substantially flush with each other. Is connected to a wiring board, and a main part including elements and parts of leads is sealed with resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12679787U JPH0625959Y2 (en) | 1987-08-19 | 1987-08-19 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12679787U JPH0625959Y2 (en) | 1987-08-19 | 1987-08-19 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6430834U JPS6430834U (en) | 1989-02-27 |
| JPH0625959Y2 true JPH0625959Y2 (en) | 1994-07-06 |
Family
ID=31378640
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12679787U Expired - Lifetime JPH0625959Y2 (en) | 1987-08-19 | 1987-08-19 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0625959Y2 (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61159746A (en) * | 1985-01-08 | 1986-07-19 | Kyodo Printing Co Ltd | Wire bonding method for ic module |
-
1987
- 1987-08-19 JP JP12679787U patent/JPH0625959Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6430834U (en) | 1989-02-27 |
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