JPS583225A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS583225A
JPS583225A JP10108881A JP10108881A JPS583225A JP S583225 A JPS583225 A JP S583225A JP 10108881 A JP10108881 A JP 10108881A JP 10108881 A JP10108881 A JP 10108881A JP S583225 A JPS583225 A JP S583225A
Authority
JP
Japan
Prior art keywords
diffusion
film
glass
silicon
impurities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10108881A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6325700B2 (enrdf_load_stackoverflow
Inventor
Tadashi Kirisako
桐迫　正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10108881A priority Critical patent/JPS583225A/ja
Publication of JPS583225A publication Critical patent/JPS583225A/ja
Publication of JPS6325700B2 publication Critical patent/JPS6325700B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
JP10108881A 1981-06-29 1981-06-29 半導体装置の製造方法 Granted JPS583225A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10108881A JPS583225A (ja) 1981-06-29 1981-06-29 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10108881A JPS583225A (ja) 1981-06-29 1981-06-29 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS583225A true JPS583225A (ja) 1983-01-10
JPS6325700B2 JPS6325700B2 (enrdf_load_stackoverflow) 1988-05-26

Family

ID=14291335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10108881A Granted JPS583225A (ja) 1981-06-29 1981-06-29 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS583225A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02177535A (ja) * 1988-12-28 1990-07-10 Matsushita Electron Corp 半導体装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5512709A (en) * 1978-07-12 1980-01-29 Toshiba Corp Manufactiring method of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5512709A (en) * 1978-07-12 1980-01-29 Toshiba Corp Manufactiring method of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02177535A (ja) * 1988-12-28 1990-07-10 Matsushita Electron Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6325700B2 (enrdf_load_stackoverflow) 1988-05-26

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